COM/MEMORY/256 Search Results

COM/MEMORY/256 Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
UPD48576236F1-E24-DW1-A	Renesas Electronics Corporation	576M-BIT Low Latency DRAM Common I/O
UPD48576218F1-E24-DW1-A	Renesas Electronics Corporation	576M-BIT Low Latency DRAM Common I/O
UPD48576236F1-E18-DW1-A	Renesas Electronics Corporation	576M-BIT Low Latency DRAM Common I/O
UPD48576209F1-E24-DW1-A	Renesas Electronics Corporation	576M-BIT Low Latency DRAM Common I/O