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    COLLECTOR CURRENT A 1 Search Results

    COLLECTOR CURRENT A 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    COLLECTOR CURRENT A 1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD543

    Abstract: 543C BD543A BD543B BD543C BD544
    Text: SavantIC Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD544/A/B/C ·8 A continuous collector current ·10 A peak Collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF BD543/A/B/C O-220C BD544/A/B/C BD543 BD543A BD543B BD543C BD543 543C BD543A BD543B BD543C BD544

    Untitled

    Abstract: No abstract text available
    Text: High-current gain Power Transistor 60V, 3A 2SD2318 Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC Collector power dissipation PC 3 A 4.5 A(Pulse) W W(TC=25°C) Tj 150 °C Tstg


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    PDF 2SD2318 SC-63 R1010A

    PC895

    Abstract: pc865 E64380 PC875
    Text: PC865 Series PC865 Series High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler • Features ■ Applications 1. Low collector dark current ICEO : MAX. 10 µ A at VCE = 24V, Ta = 85˚C 2. High current transfer ratio


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    PDF PC865 PC865 PC875 PC895 E64380 PC895 E64380 PC875

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB0942, 2SB0942A Silicon PNP epitaxial planar type Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0942 −60 VCEO 16.7±0.3 1 2 3 −5 V Peak collector current ICP −8 A Collector current


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    PDF 2SB0942, 2SB0942A 2SD1267 2SD1267A 2SB0942 2SB0942A 2SB0942

    2SB0934

    Abstract: 2SB934 2SD1257 2SD1257A
    Text: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 2SB934 V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation


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    PDF 2SD1257, 2SD1257A 2SB0934 2SB934) 2SB0934 2SB934 2SD1257 2SD1257A

    2SD2139

    Abstract: No abstract text available
    Text: Power Transistors 2SD2139 Silicon NPN triple diffusion planar type Unit: mm 18.0±0.5 Solder Dip Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current


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    PDF 2SD2139 2SD2139

    2SB0928

    Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
    Text: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C


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    PDF 2SB0928, 2SB0928A 2SB928, 2SB928A) 2SB0928 2SB0928 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A

    2SD965AL-AB3-R

    Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89


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    PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    PDF 2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    PDF 2SD965/A 2SD965 2SD965A QW-R201-007

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    PDF 2SD965 2SD965 2SD965A O-252 2SD965A QW-R209-007

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD2046 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current


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    PDF 2SD2046 Hitachi DSA002756

    2SD965

    Abstract: No abstract text available
    Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera


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    PDF 2SD965/A 2SD965 2SD965A QW-R201-007 2SD965

    543C

    Abstract: BD543 BD543A BD543B BD543C
    Text: Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD544/A/B/C ・8 A continuous collector current ・10 A peak Collector current PINNING PIN DESCRIPTION 1 Base


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    PDF BD543/A/B/C O-220C BD544/A/B/C BD543 BD543A BD543B BD543C 543C BD543 BD543A BD543B BD543C

    BC161-16

    Abstract: Bc161 marking
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 80.0 V NO. BC161-16 Voltage, Collector to Emitter (VCE) 60.0 V TYPE PNP Voltage, Emitter to Base (VEBO) 5.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


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    PDF BC161-16 tp300 BC161-16 Bc161 marking

    TRANSISTOR BC140

    Abstract: BC140-16
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 60.0 V NO. BC140-16 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


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    PDF BC140-16 tp300 TRANSISTOR BC140 BC140-16

    2SB1645

    Abstract: No abstract text available
    Text: Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5 V Peak collector current ICP −15 A Collector current IC


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    PDF 2SB1645 2SB1645

    bc547

    Abstract: BC548 BC546 transistor bc547 Bc547 TRANSISTOR bc548 npn transistor BC547 45V 100mA NPN Transistor Transistor BC548 on TRANSISTOR BC548 BC548 transistor
    Text: BC546, A/B BC547, A/B/C BC548, A/B/C NPN General Purpose Transistor COLLECTOR 1 TO-92 2 BASE 1 2 3 EMITTER 3 Maximum Ratings TA =25°C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous


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    PDF BC546, BC547, BC548, BC546 BC547 BC548 bc547 BC548 BC546 transistor bc547 Bc547 TRANSISTOR bc548 npn transistor BC547 45V 100mA NPN Transistor Transistor BC548 on TRANSISTOR BC548 BC548 transistor

    bc547

    Abstract: BC548 CBC546 BC546 transistor bc548 transistor 2222a data sheet 2222a transistor bc547 BC547 45V 100mA NPN Transistor To92 BC547 transistor
    Text: BC546, A/B BC547, A/B/C BC548, A/B/C NPN General Purpose Transistor COLLECTOR 3 TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings TA =25℃C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous


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    PDF BC546, BC547, BC548, BC546 BC547 BC548 bc547 BC548 CBC546 BC546 transistor bc548 transistor 2222a data sheet 2222a transistor bc547 BC547 45V 100mA NPN Transistor To92 BC547 transistor

    T1P110

    Abstract: T1P112 00104 TIP111 TIP112 TIP115 TIP116 TIP117
    Text: PANASONIC INDL/ELEK -CIO [□*132052 DDIOMBI a 12E D Darlington Silicon NPN Power Transistors TO-220 Package T-33 Absolute Maximum Ratings Ta=25°C Kern Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current


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    PDF O-220 TIP112 TIP115, TIP116, TIP117 25mJcs T1P110 T1P112 00104 TIP111 TIP115 TIP116 TIP117

    QM75DY-2HB

    Abstract: QM75DY-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB * lc Collector current. 75A Collector-emitter voltage.1000V * hFE DC current g a in . 750 * Insulated Type


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    PDF QM75DY-2HB E80276 E80271 QM75DY-2HB QM75DY-2H

    Untitled

    Abstract: No abstract text available
    Text: 2SC3124 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation


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    PDF 2SC3124

    2SC5108

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5108 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 08 Unit in mm FOR VCO APPLICATION M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2SC5108 --j250 2SC5108

    2SC5106

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2SC5106 SC-59 2SC5106