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    CODE TRANSISTOR YA Search Results

    CODE TRANSISTOR YA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CODE TRANSISTOR YA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR CW 7808

    Abstract: cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B
    Text: Application Note BLF0810-180; Linear LDMOS amplifier for multi carrier applications in the 869-894 MHz frequency band By Yong Yang, Igor Blednov and Barney Arntz gain and good gain flatness and phase linearity over the band of interest. The device is available


    Original     		PDF BLF0810-180; OT502 AN01002 TRANSISTOR CW 7808 cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B

    1kl38

    Abstract: GD52 diode 8631 G37 IC MCP6031COMP AN1297 ORCAD PSPICE BOOK GD16 MCP6031 transistor k 316M
    Text: AN1297 Microchip’s Op Amp SPICE Macro Models Author: Yang Zhen Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The SPICE macro models for Microchip’s operational amplifiers (op amps) aid in the design and analysis of


    Original     		PDF AN1297 DS01297A-page 1kl38 GD52 diode 8631 G37 IC MCP6031COMP AN1297 ORCAD PSPICE BOOK GD16 MCP6031 transistor k 316M

    PE2512

    Abstract: Russian Transistor rl2512xk-07xxxxl PR1206 pt1206xrx07xxxxl YAGEO PF2512 function of ic 7490
    Text: www.yageo.com Low-Ohmic Chip Resistors Low-Ohmic Chip Resistors INTRODUCTION Yageo’s low-ohmic chip resistor ranges are the ideal replacement for traditional wirewound and leaded products in modern power control circuits. Based on the company’s thick film


    Original     		PDF

    TRANSISTOR 187

    Abstract: ya24 39016/9 187 transistor NFC45255
    Text: Series T Ultraminiature «TO 5 transistor size» non latching relays 28 V / 1 A APPLICATION SPECIFICATIONS NF-C 45255 YA 24 MIL-R-39016/9 -/15 -/20 ESCC 3601-002 CECC 1601-015 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght


    Original     		PDF MIL-R-39016/9 TRANSISTOR 187 ya24 39016/9 187 transistor NFC45255

    Practical statistical simulation for efficient circuit design

    Abstract: kopin
    Text: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,


    Original     		PDF 247mm 174mm CUUK1544-09 CUUK1544/Fager 653mm 871mm 7033268A-GEN, com/display/ads2009/Using 28DOE Practical statistical simulation for efficient circuit design kopin

    Untitled

    Abstract: No abstract text available
    Text: www.yageo.com Current Sensing Chip Resistors About Yageo Founded in 1977, the Yageo Corporation has become a world-class provider of passive component services with capabilities on a global scale, including production and sales facilities in Asia, Europe and the Americas.


    Original     		PDF

    mosfet 4634

    Abstract: cloak rfid MCRF355 200B MCRF360 RG41 13.56 MHz RFID tag operation 4892 mosfet
    Text: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags


    Original     		PDF MCRF355/360 MCRF360) MCRF355 MCRF360 DS21287B-page mosfet 4634 cloak rfid MCRF355 200B RG41 13.56 MHz RFID tag operation 4892 mosfet

    OMRON CPM1A-30CDR manual

    Abstract: MAD11 omron omron CPM1-CIF01 rs 232 manual CPM1-CIF01 CPM1-CIF11 CPM1A-MAD01 CPM1A-30CDR-A CPM1A-40CDR-A OMRON CPM1A-30CDR CPM1A-MAD01 manual
    Text: Contents System Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CPM1A LineĆup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CPM1A System Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF 28C256 OMRON CPM1A-30CDR manual MAD11 omron omron CPM1-CIF01 rs 232 manual CPM1-CIF01 CPM1-CIF11 CPM1A-MAD01 CPM1A-30CDR-A CPM1A-40CDR-A OMRON CPM1A-30CDR CPM1A-MAD01 manual

    l6562 flyback led design

    Abstract: l6562 flyback design Full-bridge LLC resonant converter stereo amplifier 400W l6562 buck led design MR-16 Full-bridge LLC resonant inverter application l6562 LED Viper22 application viper22
    Text: Demonstration boards STMicroelectronics application support May 2009 www.st.com/evalboards Contents Product demonstration boards 4 Audio ICs 4 Power management ICs 5 Motion sensors MEMS 7 RF power 8 Motor control ICs 8 Lighitng ICs 9 Communication and connectivity ICs


    Original     		PDF comPC320, ST72F325K4T6 STEVAL-CBP003V1 STLED316SMTR, ST7FLITE39F2M6 STEVAL-CBP004V1 STFPC311, ST72264 STEVAL-CBP005V1 HR21/H21 l6562 flyback led design l6562 flyback design Full-bridge LLC resonant converter stereo amplifier 400W l6562 buck led design MR-16 Full-bridge LLC resonant inverter application l6562 LED Viper22 application viper22

    LT 2107

    Abstract: No abstract text available
    Text: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags


    Original     		PDF MCRF355/360 MCRF360) DS21289C-page LT 2107

    PT958-8C

    Abstract: No abstract text available
    Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-958-093 PT958-8C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189


    Original     		PDF DPT-958-093 PT958-8C 22Lines) PT9588CData 1000Pcs/1Bag 10Bags/1Box PT958-8C

    power supply aps 231

    Abstract: 125 kHz RFID parallel antenna center cloak rfid MCRF355 MCRF360 200B DK-2750 RG41 4892 mosfet 4634 regulator
    Text: MCRF355/360 13.56 MHz Passive RFID Device with Anticollision FEATURES • Frequency of operation: 13.56 MHz • Built-in anticollision algorithm for reading up to 50 tags in the same RF field • “Cloaking” feature minimizes the detuning effects of adjacent tags


    Original     		PDF MCRF355/360 MCRF360) MCRF355 power supply aps 231 125 kHz RFID parallel antenna center cloak rfid MCRF355 MCRF360 200B DK-2750 RG41 4892 mosfet 4634 regulator

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    TRANSISTOR SMD CODE 15

    Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
    Text: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:


    Original     		PDF 2SD669XD/2SD669AXD O-252) MIL-STD-202G, 2SD669XD 2SD669AXD TRANSISTOR SMD CODE 15 smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A

    PT908-7B

    Abstract: PHOTO TRANSISTOR 940nm
    Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-090-107 PT908-7B ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189


    Original     		PDF DPT-090-107 PT908-7B 22Lines) 1000Pcs/1bag6bags/1box 10boxes/1Carton PT908-7B PHOTO TRANSISTOR 940nm

    PHOTO TRANSISTOR 940nm

    Abstract: PT908-7C PT908-7C/F392
    Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DPT-092-081 PT908-7C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189


    Original     		PDF DPT-092-081 PT908-7C 22Lines) 1000Pcs/1bag6bags/1box 10boxes/1Carton PHOTO TRANSISTOR 940nm PT908-7C PT908-7C/F392

    BF747

    Abstract: MBB400 DB64 transistor HJ 388
    Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


    OCR Scan     		PDF bb53-J31 00E4bà BF747 BF747 MBB400 DB64 transistor HJ 388

    spd14n05

    Abstract: No abstract text available
    Text: SIEMENS SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> ROS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Q P-T0252


    OCR Scan     		PDF SPD14N05 SPU14N05 P-T0252 P-T0251 Q67040 S4123 S4115

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		PDF 2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BF 772 • For low noise, high gain am plifiers up to 2GHz • For linear b roadb and am plifiers • For m o dulato rs and am plifiers in VC R-tuners Type Marking Ordering code for versions on 8 mm-tape Package BF 772 RA Q62702-F1192


    OCR Scan     		PDF Q62702-F1192 800MHz, 810MHz. 800MHz

    Untitled

    Abstract: No abstract text available
    Text: 47E D ÔE35bOS QG2175S 7 «IS IE G SIEMENS SIEMENS AKTIENGESELLSCHAF 7 ^ j 9 - / 3 BUZ 230 SIPMOS Power MOS Transistor Vos la ^D S on = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancement mode • Package: T O -204A A (T O -3 )1) Type Ordering code


    OCR Scan     		PDF E35bOS QG2175S -204A 7078-A 105-A 023Sb05 QQ517bO T-39-13 SIL00733 SIL00740

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 312 SIPMOS Power Transistor o • N channel • Enhancement mode V5I05'S6 1 • Avalanche-rated 3 Pin 1 Pin 2 Type Vbs b BUZ 312 1000 V 6 A Pin 3 D G S flbS on Package Ordering Code 1.5 £2 T O -2 18 A A C67078-S3129-A2 Maximum Ratings Parameter


    OCR Scan     		PDF C67078-S3129-A2 G0A47B1 200-----V 0235bGS 123Sb05

    J3005

    Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
    Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages


    OCR Scan     		PDF 569-GS J3005 BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020

    CF-121

    Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
    Text: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


    OCR Scan     		PDF 50B4DIN41867 569-GS CF-121 ALG TRANSISTOR ALG Transistor MARKING