Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ DTC143TUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
|
Original
|
PDF
|
FM120-M+
DTC143TUA
FM1200-M
OD-123+
OD-123H
MIL-STD-19500
FM120-MH
FM130-MH
FM140-MH
FM150-MH
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
|
Original
|
PDF
|
LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
|
Original
|
PDF
|
LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
|
a1307
Abstract: a1309 t a1306 a1318 440F-A1308 a2700 A1306 440F-R1212 440F-E1610N 440F-A1309
Text: Presence Sensing Safety Devices Safety Edges Safedge Profiles Specifications Standards EN1760-2, EN 954-1, ISO13849-1, IEC/EN60204-1, ANSI B11.19, AS 4024.5 Approvals CE marked for all applicable directives, cULus and TÜV, c-tick not required Power supply
|
Original
|
PDF
|
EN1760-2,
ISO13849-1,
IEC/EN60204-1,
3560mm
a1307
a1309
t a1306
a1318
440F-A1308
a2700
A1306
440F-R1212
440F-E1610N
440F-A1309
|
5B 5C 5D 5F marking SOD-123
Abstract: 4X marking SOD 123 MM1Z2V0 4j marking code zener MM1Z75 MM1Z27 SOD123 5h sod123 4n MARKING MM1Z10 MM1Z12
Text: MM1Z2V0~MM1Z75 SILICON PLANAR ZENER DIODES PINNING Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol
|
Original
|
PDF
|
MM1Z75
OD-123
OD-123
5B 5C 5D 5F marking SOD-123
4X marking SOD 123
MM1Z2V0
4j marking code zener
MM1Z75
MM1Z27
SOD123 5h
sod123 4n MARKING
MM1Z10
MM1Z12
|
Untitled
Abstract: No abstract text available
Text: ND102 Semiconductor Antenna Switching Diode Features • Low capacit ance : Max.0.4pF • Low series resist ance : rs= 1.0Ω Typ. @I F= 10m A • UHF/ VHF Band RF Swit ch Applicat ions Ordering Information Type N o. M a r k in g Pa ck a ge Code ND102 S SOD- 923
|
Original
|
PDF
|
ND102
KSD-D6E006-001
|
Untitled
Abstract: No abstract text available
Text: SCS521S Schottky Barrier Diode PB FREE PRODUCT . SOD-523 FEATURES Low current rectification and high speed switching CATHODE MARK . . Extremely small surface mounting type. EMD2 Io=200mA guaranteed despite the size. Low VF .(VF =0.40V Typ. At 200mA) Silicon epitaxial planer
|
Original
|
PDF
|
SCS521S
OD-523
200mA
200mA)
ETX-7001
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161 4.1 0.146(3.7) 0.012(0.3) Typ.
|
Original
|
PDF
|
HFM101-M
HFM107-M
OD-123
MIL-S-19500
OD-123
MIL-STD-750,
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161 4.1 0.146(3.7) 0.012(0.3) Typ.
|
Original
|
PDF
|
HFM101-M
HFM107-M
OD-123
MIL-S-19500
OD-123
MIL-STD-750,
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.154 3.9 0.138(3.5) 0.012(0.3) Typ.
|
Original
|
PDF
|
HFM101-M
HFM107-M
OD-123
MIL-S-19500
OD-123
MIL-STD-750,
|
HFM101-M
Abstract: HFM102-M HFM103-M HFM104-M HFM105-M HFM106-M HFM107-M Diode marking CODE 1M sod-123 SOD-123 marking code H7 FM106M
Text: Formosa MS Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161 4.1 0.146(3.7) 0.012(0.3) Typ.
|
Original
|
PDF
|
HFM101-M
HFM107-M
OD-123
MIL-S-19500
OD-123
MIL-STD-750,
HFM102-M
HFM103-M
HFM104-M
HFM105-M
HFM106-M
HFM107-M
Diode marking CODE 1M sod-123
SOD-123 marking code H7
FM106M
|
Zener diode smd marking 5j
Abstract: Zener diode smd marking 4p zener diode SMD marking code 27 4F zener smd marking 4X smd zener diode code 5F SMD diode MARKING 5h smd diode code 6N diode marking code 4n smd diode 27 5j smd marking code 4Z
Text: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design
|
Original
|
PDF
|
MM1Z120
OD-123
OD-123
Zener diode smd marking 5j
Zener diode smd marking 4p
zener diode SMD marking code 27 4F
zener smd marking 4X
smd zener diode code 5F
SMD diode MARKING 5h
smd diode code 6N
diode marking code 4n
smd diode 27 5j
smd marking code 4Z
|
zener diode SMD marking code 27 4F
Abstract: Zener diode smd marking 5j Zener diode smd marking 4p smd diode 27 5j diode 5d smd Diode smd 5j Zener diode smd marking code 63 6E SMD CODE diode marking code 4n smd marking 5R
Text: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design
|
Original
|
PDF
|
MM1Z120
OD-123
OD-123
zener diode SMD marking code 27 4F
Zener diode smd marking 5j
Zener diode smd marking 4p
smd diode 27 5j
diode 5d smd
Diode smd 5j
Zener diode smd marking code 63
6E SMD CODE
diode marking code 4n
smd marking 5R
|
Zener diode smd marking 5j
Abstract: Zener diode smd marking 4p zener diode SMD marking code 27 4F zener smd marking 4X smd diode 27 5j smd diode ZENER marking 4R zener diode 5d SMD smd marking code 4Z smd zener diode code 5F MM1Z120
Text: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design
|
Original
|
PDF
|
MM1Z120
OD-123
OD-123
Zener diode smd marking 5j
Zener diode smd marking 4p
zener diode SMD marking code 27 4F
zener smd marking 4X
smd diode 27 5j
smd diode ZENER marking 4R
zener diode 5d SMD
smd marking code 4Z
smd zener diode code 5F
MM1Z120
|
|
|
ZENER 18- 2 5t
Abstract: marking code zener diode 5D Zener Diode marking 5T ZENER DIODE 5K
Text: BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.4V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
|
Original
|
PDF
|
BZT52C2V4K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
ZENER 18- 2 5t
marking code zener diode 5D
Zener Diode marking 5T
ZENER DIODE 5K
|
Untitled
Abstract: No abstract text available
Text: SMU11M THRU SMU16M 1.0 AMP SURFACE MOUNT SUPER FAST RECTIFIERS VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability SOD-123 0.161 4.1 0.146(3.7) 0.012(0.3)TYP.
|
Original
|
PDF
|
SMU11M
SMU16M
OD-123
OD123
MIL-STD-202,
300us
|
SMU12M
Abstract: No abstract text available
Text: SMU11M THRU SMU16M 1.0 AMP SURFACE MOUNT SUPER FAST RECTIFIERS VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability SOD-123 0.161 4.1 0.146(3.7) 0.012(0.3)TYP.
|
Original
|
PDF
|
SMU11M
SMU16M
OD-123
OD123
MIL-STD-202,
300us
SMU12M
|
Untitled
Abstract: No abstract text available
Text: FUF1DW.FUF1MW 1.0 Amp. Surface Mount Glass Passivated Ultrafast Recovery Rectifier Current 1.0 A Voltage 200 to 1000 V SOD123W FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability
|
Original
|
PDF
|
OD123W
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
OD123W.
MIL-STD-750
May-14
|
marking code 4A
Abstract: 5B 5C 5D 5F marking SOD-123 4j marking code zener Zener marking 4R 4V7 SOD123 marking code 5y MM1Z2V2 MM1Z10
Text: MM1Z2V0~MM1Z75 SILICON PLANAR ZENER DIODES PINNING Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol
|
Original
|
PDF
|
MM1Z75
OD-123
OD-123
marking code 4A
5B 5C 5D 5F marking SOD-123
4j marking code zener
Zener marking 4R
4V7 SOD123
marking code 5y
MM1Z2V2
MM1Z10
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
|
Original
|
PDF
|
LDTC114EET1
SC-89
LDTC114EET1
|
b2t52c43
Abstract: marking s47 B2T52-C43 BZT52C12 B2T52-C7v5
Text: Surface M ount Zeners m 410mW Zener Diodes/SOD123_ Type Number Marking Code Zener Voltage Range* _N N Izj @ Zzi VR !zm O hm s mA O hm s mA %/°C V o lts mA 1 -0.065 -0.060 -0.055 = 5m A @ •st N TC Vz Volts @ Izt * Min Reverse Maximum Typical Temperature
|
OCR Scan
|
PDF
|
410mW
Diodes/SOD123_
b2t52c43
marking s47
B2T52-C43
BZT52C12
B2T52-C7v5
|
M5M27C201
Abstract: M5m27c201j
Text: ^54^025 0 0 2 31 25 b?H • N I T l MITSUBISHI LSIs M5M27C201 P,FP,J,VP,RV-12,-15 2097152-BIT 262144-WORD BY 8-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The M itsubishi M 5M 27C201 P ,FP ,J,V P ,R V are high -spe ed PIN CONFIGURATION (TOP VIEW) 2 0 9 7 1 5 2 -b it one tim e programmable read only memories.
|
OCR Scan
|
PDF
|
M5M27C201
RV-12
2097152-BIT
262144-WORD
27C201
27C201P,
M5M27C201P,
M5m27c201j
|
sod6 package
Abstract: 4C500L 4C500 UT 161
Text: MITSUBISHI LSIs M5M4C500L-5,-6,-10 4 9 1 5 2 0 -B IT 8 1 9 2 0 -WORD B Y 6 -B IT F IE L D M EM ORY DESCRIPTION The M 5M 4C 500L is a fie ld m em ory consisting o f a mem o ry array o f 320 rows x 256 columns x 6 bits a serial in p u t m em ory o f 256 x 6 bits, and a serial o u tp u t m em ory o f
|
OCR Scan
|
PDF
|
M5M4C500L-5
4C500L
28-pin
sod6 package
4C500
UT 161
|
1SS380
Abstract: tn sot-363 IMN11 DA221M DA228K
Text: •P ro d u ct lineup Surface m ounting type 1208 size Category Application V rm V S w itching diode High-speed 80—90 2012 size # # VMD3 20 1608 Size # # 291 6 Size # # # # # UMD2 EMD2 EMD3 UMD4 UMD6 UMD3 UMD5 SMD3 (SOD-523) (SOT-416) (SOD-323) (SOT-323) (SOT-343) (SOT-353) (SOT-363) (SOT-346)
|
OCR Scan
|
PDF
|
DA221
DAN222
DAP222
1SS355
DA204U
DAN202U
DAP202U
DAN217U
DA228U
DA227
1SS380
tn sot-363
IMN11
DA221M
DA228K
|
