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    Text: CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES ‹ Vds=25V ‹ Advanced trench process technology ‹ RDS ON =6 mΩ (Max.) , VGS @10V, Ids@30A ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A


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    CMT55N03G O-252 PDF