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    CMPD914 DIODE Search Results

    CMPD914 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CMPD914 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CMPD914

    Abstract: diode marking r5 318 SOT23
    Text: Central CMPD914 Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for


    OCR Scan     		CMPD914 OT-23 100i2, CPD63 OT-23 diode marking r5 318 SOT23 PDF

    diode C5d

    Abstract: marking C5D transistor C5D CMPD914 TP10 diode marking r5 R5 SOT CMPD914 diode switching diode marking code R5 sot23
    Text: Central CMPD914 TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for


    Original     		CMPD914 CMPD914 OT-23 diode C5d marking C5D transistor C5D TP10 diode marking r5 R5 SOT CMPD914 diode switching diode marking code R5 sot23 PDF

    sot-23 marking code T25

    Abstract: CMPD914 sot-23 MARKING CODE JS
    Text: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for


    OCR Scan     		CMPD914 OT-23 100pA 13-November OT-23 sot-23 marking code T25 sot-23 MARKING CODE JS PDF

    diode C5d

    Abstract: marking C5D TP10 CMPD914 CMPD914 diode
    Text: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914 is a ultrahigh speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for


    Original     		CMPD914 OT-23 13-November diode C5d marking C5D TP10 CMPD914 diode PDF

    CMPD914

    Abstract: No abstract text available
    Text: Central CMPD914 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    OCR Scan     		CMPD914 OT-23 CMPD914 100hA PDF

    CMPD914

    Abstract: diode By 129
    Text: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    Original     		CMPD914 CMPD914 OT-23 diode By 129 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPD914 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914 is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    Original     		CMPD914 CMPD914 OT-23 25-January PDF

    diode C5d

    Abstract: CMPD914 marking C5D CMPD914 diode
    Text: CMPD914 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914 is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    Original     		CMPD914 CMPD914 OT-23 25-January diode C5d marking C5D CMPD914 diode PDF

    CMPD914

    Abstract: No abstract text available
    Text: Central CMPD914 TM Sem i c o n d u c t o r C o r p . HIGH SPEED SWITCHING DIODE DESCRIPTION The C ENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface


    OCR Scan     		CMPD914 OT-23 CMPD914 PDF

    marking 321 sot-23

    Abstract: No abstract text available
    Text: Central' CMPD914E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.


    OCR Scan     		CMPD914E CMPD914 OT-23 CPD63 OT-23 marking 321 sot-23 PDF

    ED marking code diode

    Abstract: sot-23 marking code T25 diode MARKING ED
    Text: Central" CMPD914E semiconductor Corp. NHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.


    OCR Scan     		CMPD914E CMPD914 OT-23 20-February OT-23 ED marking code diode sot-23 marking code T25 diode MARKING ED PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPD914 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)10m


    Original     		CMPD914 Current200m Voltage100 StyleSOT-23 PDF

    F10 SOT23

    Abstract: TP10 CMPD914 CMPD914E
    Text: Central CMPD914E Semiconductor Corp. ENHANCED SPECIFICATION HIGH SPEED SWITCHING DIODE TM Description: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.


    Original     		CMPD914E CMPD914E CMPD914 OT-23 100mA 11-March F10 SOT23 TP10 PDF

    TP10

    Abstract: CMPD914 CMPD914E
    Text: Central CMPD914E ENHANCED SPECIFICATION TM Semiconductor Corp. SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications.


    Original     		CMPD914E CMPD914E CMPD914 OT-23 100mA TP10 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package,


    Original     		CMPD914E CMPD914E CMPD914 OT-23 100mA 25-January PDF

    Untitled

    Abstract: No abstract text available
    Text: Central C M PD 914 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The C EN TR AL SEM IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    OCR Scan     		OT-23 CMPD914 PDF

    CMPD914

    Abstract: CMPD914E
    Text: CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package,


    Original     		CMPD914E CMPD914E CMPD914 OT-23 100mA 25-January PDF

    Untitled

    Abstract: No abstract text available
    Text: Central” CMPD914 Sem iconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C T O R CM PD 914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    OCR Scan     		CMPD914 OT-23 100i2, 0177e PDF

    CMPD914

    Abstract: CMPD914 diode
    Text: Central C M P D 914 S em ico ndu cto r Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed


    OCR Scan     		OT-23 CMPD914 CMPD914 diode PDF

    1n4148

    Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
    Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448 PDF

    diode S 335

    Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 diode S 335 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836 PDF

    CMPD2836

    Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914 PDF

    1n4148 die

    Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
    Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 die DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip PDF

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448 PDF