PTSP0003ZA-A
Abstract: No abstract text available
Text: Package Name CMPAK JEITA Package Code SC-70 D RENESAS Code PTSP0003ZA-A Previous Code CMPAK / CMPAKV MASS[Typ.] 0.006g A e Q c E HE LP L A A x M L1 S A A3 b e A2 Reference Symbol A A1 S e1 b l1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3
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SC-70
PTSP0003ZA-A
PTSP0003ZA-A
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cmpak6
Abstract: SC-88 package
Text: JEITA Package Code SC-88 Package Name CMPAK-6 RENESAS Code PTSP0006JA-A D Previous Code CMPAK-6 / CMPAK-6V MASS[Typ.] 0.006g A e Q c E HE LP L A A x M L1 S A A3 b Reference Symbol e A2 y S A A1 S e1 b l1 c b2 A-A Section Pattern of terminal position areas
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SC-88
PTSP0006JA-A
cmpak6
SC-88 package
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Untitled
Abstract: No abstract text available
Text: HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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HRB0502A
REJ03G0047-0200Z
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Untitled
Abstract: No abstract text available
Text: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.
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TBB1017
REJ03G1469-0100
PTSP0006JA-A
TBB1017
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1005
R07DS0315EJ1000
REJ03G0843-0900)
PTSP0006JA-A
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Untitled
Abstract: No abstract text available
Text: HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0545-0200 Rev.2.00 Jan 07, 2009 Features • High reverse voltage. VR = 250V • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting.
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HSB83YP
REJ03G0545-0200
HSB83YPTL
HSB83YPTR
PTSP0004ZB-A
REJ03G0545-0200
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
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TBB1012
R07DS0317EJ0300
REJ03G1245-0200)
PTSP0006JA-A
TBB1012
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diode marking e8
Abstract: marking e8 diode E8 package marking smd e8 HSB276AS
Text: Diodes SMD Type Silicon Schottky Barrier Diode HSB276AS Features High forward current, Low capacitance. HSB276AS which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly.
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HSB276AS
HSB276AS
200pF,
diode marking e8
marking e8
diode E8 package marking
smd e8
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Untitled
Abstract: No abstract text available
Text: CM PA K -4 SOT343R CMPAK-4; Tape reel SMD; standard product orientation 12NC ending 135 Rev. 1 — 13 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel
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OT343R
msc074
OT343R
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Untitled
Abstract: No abstract text available
Text: 0 - 0.10 2.0 ± 0.2 0.1 0.3 +− 0.05 0.65 (0.65) 0.13 ± 0.05 0.55 ± 0.05 0.2 1.3 ± 0.2 CMPAK 0 – 0.10 2.8 1.5 ± 0.15 1.9 ± 0.2 (0.65) (0.95) (0.95) + 0.10 0.16 – 0.06 + 0.2 − 0.6 + 0.1 0.4 − 0.05 (0.65) SFP 0.8 ± 0.2 + 0.2 1.1 − 0.1 0.3
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2SC4463
Abstract: DSA003724
Text: 2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO
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2SC4463
2SC4463
DSA003724
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HZB5.6MFA
Abstract: DSA003640
Text: HZB5.6MFA Silicon Planar Zener Diode for Surge Absorb ADE-208-1438 Z Rev.0 Nov. 2001 Features • HZB5.6MFA has four devices in a monolithic, and can absorb surge. • High ESD-Capability 30kV, human body model (IEC61000-4-2). • CMPAK-5 Package is suitable for high density surface mounting.
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ADE-208-1438
IEC61000-4-2)
D-85622
D-85619
HZB5.6MFA
DSA003640
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HSB88WA
Abstract: DSA003645
Text: HSB88WA Silicon Schottky Barrier Diode for High Speed Switching ADE-208-965 Z Rev.0 Aug. 2000 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSB88WA
ADE-208-965
HSB88WA
DSA003645
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HVB187YP
Abstract: DSA003640 Hitachi DSA003640
Text: HVB187YP Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator ADE-208-1411 Z Rev.0 Jun. 2001 Features • Low series resistance. (rf = 5.5 max) • CMPAK-4 package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HVB187YP
ADE-208-1411
HVB187YP
DSA003640
Hitachi DSA003640
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HRB0103A
Abstract: DSA003642
Text: HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-490 Z Rev 0 Apr. 1997 Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly.
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HRB0103A
ADE-208-490
HRB0103A
DSA003642
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2SC2735
Abstract: 2SC4265 DSA003637
Text: 2SC4265 Silicon NPN Epitaxial ADE-208-1102A Z 2nd. Edition Mar. 2001 Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “JC”. 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SC4265
ADE-208-1102A
2SC2735
2SC4265
DSA003637
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3SK296
Abstract: DSA003641
Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1
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3SK296
ADE-208-388A
3SK296
DSA003641
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HITACHI DIODE
Abstract: HSB276AYP DSA003637
Text: HSB276AYP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-1051 Z Rev.0 Jan. 2001 Features • High forward current, Low capacitance. • CMPAK - 4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSB276AYP
ADE-208-1051
HITACHI DIODE
HSB276AYP
DSA003637
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HSB0104YP
Abstract: PTSP0004ZB-A SC-82
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching REJ03G0597-0200 Previous: ADE-208-730A Rev.2.00 Apr 12, 2005 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
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HSB0104YP
REJ03G0597-0200
ADE-208-730A)
PTSP0004ZB-A
Non-Repetiti5-900
Unit2607
HSB0104YP
PTSP0004ZB-A
SC-82
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Hitachi DSA002712
Abstract: No abstract text available
Text: HSB2836 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-485 Z Rev 0 Features • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code
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HSB2836
ADE-208-485
HSB2836
SC-70
Hitachi DSA002712
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Hitachi DSA002750
Abstract: No abstract text available
Text: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base
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2SC4784
D-85622
Hitachi DSA002750
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Hitachi DSA002746
Abstract: No abstract text available
Text: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base
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2SC4784
D-85622
Hitachi DSA002746
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Untitled
Abstract: No abstract text available
Text: HRC0202A Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-210E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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HRC0202A
ADE-208-210E
SC-70
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Untitled
Abstract: No abstract text available
Text: HSB124S-J Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-488 Z Rev 0 Features • Low reverse current.(IR= 0.01 ¡lAmax) • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSB124S-J
ADE-208-488
SC-70
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