S1D14F50
Abstract: S2D19600D00B S2D19600 s1d15e0 S1D13U11F00A jpeg encoder vhdl code sgs 601 gas sensor S2D19600 EPSON S1D15722 S1D13521
Text: EPSON CMOS LSIs Product Catalog 2010 Microcontrollers 4-bit / 8-bit / 16-bit / 32-bit Gate Arrays / Embedded Arrays / Standard Cells 2011 2010 CMOS LSIs Product Catalog ASICs CMOS LSIs Product Catalog 2011 ASSPs Application Specific Standard Products 2011
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16-bit
32-bit
S1D14F50
S2D19600D00B
S2D19600
s1d15e0
S1D13U11F00A
jpeg encoder vhdl code
sgs 601 gas sensor
S2D19600 EPSON
S1D15722
S1D13521
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Semicon volume 1
Abstract: microcontroller based cell phone detector PROJECT sgs 601 gas sensor
Text: EPSON CMOS LSIs Product Catalog 2013 Microcontrollers 4-bit / 16-bit / 32-bit Gate Arrays / Embedded Arrays / Standard Cells 2010 2010 CMOS LSIs Product Catalog ASICs CMOS LSIs Product Catalog 2013 ASSPs Application Specific Standard Products 2013 http://www.epson.jp/device/semicon_e/
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16-bit
32-bit
moS16949:
Semicon volume 1
microcontroller based cell phone detector PROJECT
sgs 601 gas sensor
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S2D19600 EPSON
Abstract: S1D15719 S2D19600 S1D13521 S1D13522 S1D15722 S1D15719D22B S1D15722D01B S1D15712 S2D19600D00B
Text: CMOS LSIs Product Catalog 2010 CMOS LSIs Contents Configuration of product number . 2 1 ASICs Application Specific IC 1-1 Gate Arrays . 4
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S1L70000
S1L60000
S1L50000
S1L30000
16-bit
32-bit
S2D19600 EPSON
S1D15719
S2D19600
S1D13521
S1D13522
S1D15722
S1D15719D22B
S1D15722D01B
S1D15712
S2D19600D00B
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M5M28F102AVP
Abstract: M5M28F102A XX10H M5M28F102AJ xx40h
Text: MITSUBISHI MITSUBISHI LSIs LSIs M5M28F102AFP,J,VP,RV*-85,-10 M5M28F102AFP,J,VP,RV*-85,-10 1048576-BIT 1048576-BIT 65536-WORD (65536-WORD BY BY 16-BIT 16-BIT) CMOS CMOS FLASH FLASH MEMORY MEMORY DESCRIPTION The MITSUBISHI M5M28F102A is high-speed 1048576-bit CMOS
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M5M28F102AFP
1048576-BIT
65536-WORD
16-BIT)
M5M28F102A
1048576-bit
M5M28F102AVP
XX10H
M5M28F102AJ
xx40h
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S1D15719
Abstract: S1D15722D01B S1D15719D22B S1D15714D01E s1d13517 S1D15722 Matrix CCD "line sensor" Epson epd driving S1D15712 S1D15721D01B
Text: CMOS LSIs Product Catalog 2009 SEIKO EPSON CORPORATION CMOS LSIs Contents Configuration of product number . 2 1 ASICs Application Specific IC 1-1 Gate Arrays . 4
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S1L70000
S1L60000
S1L50000
S1L30000
16-bit
32-bit
S1D15719
S1D15722D01B
S1D15719D22B
S1D15714D01E
s1d13517
S1D15722
Matrix CCD "line sensor" Epson
epd driving
S1D15712
S1D15721D01B
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BC244
Abstract: M5M51016BTP A-1540 a1540 A7423
Text: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
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M5M51016BTP
RT-10VL,
-10VLL
1048576-BIT
65536-WORD
16-BIT
BC244
A-1540
a1540
A7423
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S1D15719
Abstract: S1D15712 Mini USB 5Pin F SMT S1D15721 stepping motor EPSON 323 speed control of SMALL dc motor using dtmf LED Dot Matrix vhdl code vhdl code 16 bit processor S1D15E00D01B S1D15716
Text: CMOS LSIs Product Catalog 2006/4- SEIKO EPSON CORPORATION CMOS LSIs Contents Configuration of product number . 2 1 ASICs Application Specific IC 1-1 Gate Arrays . 4
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S1L70000
S1L60000
S1L50000
S1L30000
S1L9000F
32-bit
S1D15719
S1D15712
Mini USB 5Pin F SMT
S1D15721
stepping motor EPSON 323
speed control of SMALL dc motor using dtmf
LED Dot Matrix vhdl code
vhdl code 16 bit processor
S1D15E00D01B
S1D15716
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mitsubishi SOP
Abstract: M5M5V108DFP A1273 MARK S2 smd transistor A8 M5M5V108DKV M5M5V108DVP transistor smd tsu
Text: 7th.July.2000 Ver. 1.0 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70H 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
mitsubishi SOP
A1273
MARK S2
smd transistor A8
M5M5V108DKV
transistor smd tsu
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M5M5256DFP
Abstract: M5M5256DVP 28P2C-A 28P2W-C REJ03C0054
Text: RENESAS LSIs M5M5256DFP,VP -70G,-70GI,-70XG 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of
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M5M5256DFP
-70GI
-70XG
262144-BIT
32768-WORD
144-bit
768-words
M5M5256DVP
28-pin
28P2C-A
28P2W-C
REJ03C0054
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Untitled
Abstract: No abstract text available
Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70H 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
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Untitled
Abstract: No abstract text available
Text: 7th.July.2000 Ver. 1.0 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
-70HI
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
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M5M5V108DFP
Abstract: M5M5V108DKV M5M5V108DVP
Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
-70HI
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
M5M5V108DKV
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Untitled
Abstract: No abstract text available
Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
-70HI
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
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mn12510
Abstract: N1380 N-550-2 pdp scan driver n1259 MN13811
Text: Microcomputer Peripheral LSIs • Microcomputer Peripheral LSIs Category Type No. Process Functions Supply Voltage Package No. V FLP driver MN12510 CMOS M N1256 LCD driver M N1258 CMOS M N1259 LCD/CRT interface Voltage detector Clock (Calendar) M N5502 CMOS
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SDIP042-P-0600QFP044-P-1010
MN12510
N1256
QFP040-P-1010
QFP124-P-2828
SSOP020-P-0225
N1258
N1259
N871501
16-Bit
N1380
N-550-2
pdp scan driver
n1259
MN13811
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3059 npn transistor
Abstract: C100 LC7363J LC7363JM MCD506
Text: Ordering num ber: EN3199 CMOS LSI LC7363J, 7363JM DTMF/PULSE Switchable Dialer The LC7363J.7363JM are DTMF/OUTPUT-PULSE dialer CMOS LSIs with redial function for use in pushbutton telephones. F eatu res 1 Low voltage CMOS process for direct operation from telephone line.
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EN3199
LC7363J,
7363JM
58MHz)
LC7363J
7363JM
31-digit
3059 npn transistor
C100
LC7363JM
MCD506
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LC7363J
Abstract: 3059 npn transistor D-60 LC7363JM
Text: Ordering number: EN3199 CMOS LSI No.3199 LC7363J, 7363JM I DTMF/PULSE Switchable Dialer The LC7363J,7363JM are DTMF/OUTPUT-PULSE dialer CMOS LSIs with redial function for use in pushbutton telephones. Features 1 Low voltage CMOS process for direct operation from telephone line.
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EN3199
LC7363J,
7363JM
LC7363J
7363JM
58MHz)
31-digit
3059 npn transistor
D-60
LC7363JM
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-blt CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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1048576-BIT
65536-WORD
16-BIT)
M5M51016ATP,
1048576-blt
16-bit
44-pin
51016ATP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5255CP,FP,KP-55LL,-55XL, -70LL,-70XL 262144-BfT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP.FP.KP is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of
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M5M5255CP
KP-55LL
-55XL,
-70LL
-70XL
262144-BfT
32768-WORD
262144-bit
32768-words
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bc2AT
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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OCR Scan
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M5M51016BTP
RT-70L
-70LL
-10LL
1048576-BIT
65536-WQRD
16-BIT
M5M51016BTP,
bc2AT
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PDF
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m5m51008afp
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131Q72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance triple polysilicon CMOS
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OCR Scan
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M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131Q72-WORD
M5M51008AFP,
M5M51008AVP,
M5M51008AVP
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1Q48576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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OCR Scan
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M5M51016BTP
RT-70L
-70LL
-10LL
1Q48576-BIT
65536-WORD
16-BIT
M5M51016BTP,
1048576-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: M ITSU B ISH I LSIs M5M51016BTP,RT-12VLr 12VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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M5M51016BTP
RT-12VLr
12VLL
1048576-BIT
65536-WORD
16-BIT)
M5M51016BTP,
1048576-bit
16-bit
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m5m51008afp
Abstract: m5m51008avp M5M51008AV
Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - b it which are fabricated using high-performance triple polysilicon CMOS
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OCR Scan
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M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131072-WORD
M5M51008AFP,
M5M51008AVP,
M5M51008AVP
M5M510oltage
m5m51008avp
M5M51008AV
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51016BTP,RT-1 OVL-I, -10VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
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OCR Scan
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M5M51016BTP
-10VLL-I
1048576-BIT
65536-WQRD
16-BIT
M5M51016BTP,
51016BTP
44-pin
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PDF
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