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    CMOS LOW POWER Search Results

    CMOS LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    CMOS LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V62C3162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162096L is a Low Power CMOS Static


    Original     		PDF V62C3162096L 48-fpBGA

    V62C3162048L

    Abstract: No abstract text available
    Text: V62C3162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162048L is a Low Power CMOS Static


    Original     		PDF V62C3162048L I/O16.

    Untitled

    Abstract: No abstract text available
    Text: V62C1162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162096L is a Low Power CMOS Static


    Original     		PDF V62C1162096L 48-fpBGA

    Untitled

    Abstract: No abstract text available
    Text: V62C2162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162096L is a Low Power CMOS Static


    Original     		PDF V62C2162096L 48-fpBGA

    V62C3161024L

    Abstract: No abstract text available
    Text: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM


    Original     		PDF V62C3161024L TheV62C3161024L I/O16.

    Untitled

    Abstract: No abstract text available
    Text: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static


    Original     		PDF V62C2162048L 48-fpBGA

    TBA 120T

    Abstract: V62C1162048L TBA 120M
    Text: V62C1162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162048L is a Low Power CMOS Static


    Original     		PDF V62C1162048L I/O16. TBA 120T TBA 120M

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		PDF 5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology

    CI PT 2313

    Abstract: No abstract text available
    Text: V62C2802096L L Ultra Low Power 256K x 8 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA at 55ns - Stand-by: 10 µA (CMOS input/output) 2 µA CMOS input/output, L version The V62C2802096L is a low power CMOS Static RAM


    Original     		PDF V62C2802096L CI PT 2313

    V62C2162048L

    Abstract: to-27V
    Text: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static


    Original     		PDF V62C2162048L I/O16. Tri-state081 to-27V

    Untitled

    Abstract: No abstract text available
    Text: FMP3217CCx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Dec. 10th, 2007 1 Revision 0.0 Dec. 2007 FMP3217CCx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM


    Original     		PDF FMP3217CCx 48-FBGA- FMP3217CCx-FxxX FMP3217CCx-GxxX FMP3217CCx-HxxX FMP3217CC1 FMP3217CC2 25/Typ. 85/Typ.

    Untitled

    Abstract: No abstract text available
    Text: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM


    Original     		PDF FMP3217CAx 48-FBGA-6 FMP3217CAx-FxxX FMP3217CAx-GxxX FMP3217CAx-HxxX FMP3217CA1 FMP3217CA2 25/Typ. 85/Typ.

    V62C2161024L

    Abstract: No abstract text available
    Text: V62C2161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) The V62C2161024L is a Low Power CMOS Static RAM


    Original     		PDF V62C2161024L I/O16.

    TBA 120T

    Abstract: V62C1161024L
    Text: V62C1161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 30mA ICC at 70ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) The V62C1161024L is a Low Power CMOS Static RAM


    Original     		PDF V62C1161024L I/O16. TBA 120T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SD116U128 SD116U128L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA CMOS input/output 2 µA (CMOS input/output, L version) The SD116U128 is a Low Power CMOS Static RAM


    Original     		PDF SD116U128 SD116U128L SD116U128 I/O16. Suppl16U128 G-100 G-120 44-pin

    XOAC

    Abstract: Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 XE1209 FC D0205 F1872
    Text: Datasheet XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kHz Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION KEY FEATURES The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level


    Original     		PDF XE1209 XE1209 D0205-51 XOAC Capacitate CMOS/Transceiver xtal 32.768 DS26 SO20 FC D0205 F1872

    1g125

    Abstract: 1G86 3Gxxx 2G08 1G02 1G08 1G14 2G126 3G17 1G17
    Text: NXP ultra-low-power CMOS logic 74AUP1G/2G/3Gxxx Advanced, ultra-low-power CMOS logic Designed for high-performance, low-power applications, these low-voltage, Si-gate CMOS devices offer the industry’s lowest dynamic power consumption in a logic device. Features


    Original     		PDF 74AUP1G/2G/3Gxxx 3GU04 1g125 1G86 3Gxxx 2G08 1G02 1G08 1G14 2G126 3G17 1G17

    1G04

    Abstract: 1g125 1G14 2G08 1G02 1G08 cmos inverter single SOT-765
    Text: NXP ultra-low-power CMOS logic 74AUP1G/2G/3Gxxx Advanced, ultra-low-power CMOS logic Designed for high-performance, low-power applications, these low-voltage, Si-gate CMOS devices offer the industry’s lowest dynamic power consumption in a logic device. Features


    Original     		PDF 74AUP1G/2G/3Gxxx 1G04 1g125 1G14 2G08 1G02 1G08 cmos inverter single SOT-765

    cmos 4000

    Abstract: MC14000 cmos logic 4000 series M1251 CMOS 4000 Series family mc14000 series 4000 CMOS Data Book 4000 series CMOS Logic ICs CMOS 4000 family specifications CMOS 4000 Logic Family
    Text: Thru-hole D.I.L. M1251, M1252 FIXED/ TRISTATE OSCILLATORS 0° to 70°C Low Power CMOS, 5 to 15V 825 Hz to 10 MHz Low power CMOS, 5 to 15V The low power CMOS clock oscillators are based on CMOS semiconductors with industry’s lowest current-draw characteristics.


    Original     		PDF M1251, M1252 MC14000 NY10801 cmos 4000 cmos logic 4000 series M1251 CMOS 4000 Series family mc14000 series 4000 CMOS Data Book 4000 series CMOS Logic ICs CMOS 4000 family specifications CMOS 4000 Logic Family

    QCIF 60 fps

    Abstract: MT9V011 320H micron VGA Micron CMOS sensor VGA
    Text: MT9V011 640H x 480V, Ultra Low-Power, CMOS Digital Image Sensor Features l DigitalClarity CMOS imaging technology Ultra low-power, low-cost CMOS image sensor l VGA-quality image resolution 640H x 480V l 1/4-inch optical format l Superior low-light performance


    Original     		PDF MT9V011 10-bit 28-pin QCIF 60 fps MT9V011 320H micron VGA Micron CMOS sensor VGA

    IR photodiode

    Abstract: Photodiode Amplifiers - Op Amp Solutions bill validator machine circuit
    Text: LMV861,LMV862 LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Literature Number: SNOSAZ5A LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description Features National’s LMV861 and LMV862 are CMOS input, low power


    Original     		PDF LMV861 LMV862 LMV861/LMV862 Single/LMV862 LMV862 IR photodiode Photodiode Amplifiers - Op Amp Solutions bill validator machine circuit

    XE1209C012TRLF

    Abstract: CPFSK receiver DS26 XE1209
    Text: XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kH Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level Continuous Phase FSK modulation. The receiver section


    Original     		PDF XE1209 XE1209 32kHz XE1209C012TRLF CPFSK receiver DS26

    pd2a

    Abstract: No abstract text available
    Text: FAST CMOS BUFFER/CLOCK DRIVER IDT74FCT810BT/CT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • • 0.5 MICRON CMOS technology Guaranteed low skew < 600ps max. Very low duty cycle distortion < 700ps (max.) Low CMOS power levels


    Original     		PDF IDT74FCT810BT/CT 600ps 700ps MIL-STD-883, 200pF, 74FCT810BT/CT 810BT 810CT P20-1) pd2a

    Untitled

    Abstract: No abstract text available
    Text: FAST CMOS BUFFER/CLOCK DRIVER IDT49FCT805/A IDT49FCT806/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology Guaranteed low skew < 700ps max. Low duty cycle distortion < 1ns (max.) Low CMOS power levels TTL compatible inputs and outputs


    OCR Scan     		PDF IDT49FCT805/A IDT49FCT806/A 700ps -24mA MIL-STD-883, IDT49FCT805/A IDT49FCT806/A IDT49FCT805/806/A T49FC