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    CMOS IC AND GATES Search Results

    CMOS IC AND GATES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4001BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/AND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    74HC08D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/AND, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC08AP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Quad 2-Input/AND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC08FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/AND, TSSOP14B, -40 to 125 degC, AEC-Q100 Visit Toshiba Electronic Devices & Storage Corporation
    54AC08/BCA Rochester Electronics LLC 54AC08 - AND Gate, AC Series, 4-Func, 2-Input, CMOS - Dual marked (M38510/75203BCA) Visit Rochester Electronics LLC Buy

    CMOS IC AND GATES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Reliability Advanced CMOS Logic IC s - CD54AC00/3A CD54ACT00/3A Quad 2-lnput NAND Gate ZH The RCA CD54ACOO/3A and CD54ACT00/3A are quad 2input NAND gates that utilize the new RCA ADVANCED CMOS LO G IC te ch n o lo g y. The CD54AC00/3A and


    OCR Scan     		CD54AC00/3A CD54ACT00/3A CD54ACOO/3A CD54ACT00/3A CD54AC00/3A 14-lead S-36528R CD54AC02/3A CD54ACT02/3A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UCD4002B Preliminary CMOS IC CMOS NOR Gates High-Voltage Types „ DESCRIPTION UCD4002B NOR gate provides the system designer with direct implementation of the NOR function and supplements the existing family of CMOS gates.All inputs and outputs are buffered.


    Original     		UCD4002B UCD4002B UCD4002BL-S14-T UCD4002BG-S14-T UCD4002BL-S14-R UCD4002BG-S14-R UCD4002BL-P14-T UCD4002BG-P14-T UCD4002BL-P14-R UCD4002BG-P14-R PDF

    DATA SHEET OF IC 317

    Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
    Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,


    Original     		PDF

    applications 4046b

    Abstract: unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB
    Text: ICAN-6558 Understanding Buffered and Unbuffered CMOS Characteristics by R. E. Funk INTRODUCTION Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from RCA; each pro­ duct classification has application advantages


    OCR Scan     		ICAN-6558 CD4000B CD400IB CD4002B CD4010B CD401IB CD4012B CD4023B CD4025B CD4050B applications 4046b unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB PDF

    CBV2

    Abstract: HN27C301
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


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    77106

    Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    Original     		PDF

    CBV2

    Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
    Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


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    flash 32 Pin PLCC 16mbit

    Abstract: 398x
    Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


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    0.18-um CMOS technology characteristics

    Abstract: TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2010/9 SCE0004K To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		2010/9SCE0004K 0.18-um CMOS technology characteristics TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200 PDF

    TOSHIBA TC160

    Abstract: 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2009-8 SCE0004I To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		SCE0004I TOSHIBA TC160 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G PDF

    toshiba Transistors catalog

    Abstract: TC200 TC220C TC220E TC280 TC280C toshiba semiconductor catalog tc190c TC223G 65-nm CMOS standard cell library process technology
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2011/9 SCE0004L To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		SCE0004L toshiba Transistors catalog TC200 TC220C TC220E TC280 TC280C toshiba semiconductor catalog tc190c TC223G 65-nm CMOS standard cell library process technology PDF

    TOSHIBA TC160

    Abstract: TC300C TC260 TOSHIBA standard cell library 130 nm CMOS standard cell library toshiba TC200G 90 nm CMOS Cell-based ASIC TC223C TC280 TC203G/E
    Text: Semi-Custom ICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 62 62 63 57 To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		TC260E. TOSHIBA TC160 TC300C TC260 TOSHIBA standard cell library 130 nm CMOS standard cell library toshiba TC200G 90 nm CMOS Cell-based ASIC TC223C TC280 TC203G/E PDF

    MIL-STD-806

    Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
    Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


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    transistor bc 567

    Abstract: Bipolar Integrated Technology show the structure of integrated circuit cmos integrated circuits CMOS Linear Integrated Circuit SLLA065 SN65LVDS050 SN65LVDS31 SN65LVDS32 transistor bc 564
    Text: Application Report SLLA065 - MARCH 2000 A Comparison of LinBiCMOS and CMOS Process Technology in LVDS Integrated Circuits Rick Jordanger Interface IC Design Engineering ABSTRACT This application report compares LinBiCMOS and pure CMOS technologies for the design of


    Original     		SLLA065 transistor bc 567 Bipolar Integrated Technology show the structure of integrated circuit cmos integrated circuits CMOS Linear Integrated Circuit SN65LVDS050 SN65LVDS31 SN65LVDS32 transistor bc 564 PDF

    BU12460

    Abstract: bu12306 BU124 l 6283 BU12300 BU12310
    Text: M o n o lith ic IC s 0 .8 //m CMOS Gate Array BU12K Family The BU12K family of gate arrays are SOG Sea Of Gates gate arrays based on 0.8 / x m CMOS technology. Its base series includes the BU12300 series (multi I/O type) and BU12400 series (capable of driving with a current as large as 40mA).


    OCR Scan     		BU12K BU12300 BU12400 BU12300L BU12440 BU12460 QFP44 bu12306 BU124 l 6283 BU12310 PDF

    MG1140E

    Abstract: 000GATES
    Text: Tem ic Array MATRA MHS MG1RT : Radiation Tolerant 0.6|im CMOS Sea Of Gates Description TEMIC / MATRA MHS is the first European supplier for space application submicronic radiation tolerant CMOS ASICs. This is why TEMIC keeps offering a fluent way of moving up and down the quality and the space/radiation


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    Untitled

    Abstract: No abstract text available
    Text: E M IC O N D U C T Q R r MM74HC08 Quad 2-Input AND Gate General Description Features These AND gates utilize advanced silicon-gate CMOS tech­ nology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS inte­


    OCR Scan     		MM74HC08 54LS/74LS 14-Lead MM74HC08M MM74HC08SJ MM74HC08N PDF

    FRW17

    Abstract: CMOS IC oki Package
    Text: Note» on Usage O K I Semiconductor Notes on Usage 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the latch-up, presence of input pins not in use, and other


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor INTRODUCTION ♦ NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the lateh-up, presence of input pins not in use, and other


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    static charge meter

    Abstract: No abstract text available
    Text: O K I Semiconductor NOTES ON USAGE ♦ NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the latch-up, presence of input pins not in use, and other


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    98P05

    Abstract: No abstract text available
    Text: E2D5009-27-50 O K I Semiconductor ♦NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are w idely used in digital equipment d u e to their low pow er dissipation, high degree of m argin for noise and w ide operating pow er supply range. H ow ever, CMOS IC chips


    OCR Scan     		E2D5009-27-50 MSM6378A 63P74 66P54 66P56 98P05 256KbitS 512Kbits 98P05 PDF

    ECN3053

    Abstract: ECN3053F high voltage 3-phase motor driver ic application for high gain cmos opamp
    Text: HIGH VOLTAGE MONOLITHIC IC ECN3053F 3-Phase Motor Bridge Driver IC The ECN3053F drives a 3-Phase Motor Bridge with 3 TOP and 3 BOTTOM Arms, Push-Pull Output Drivers controlled by 6 CMOS inputs. Built in a High Voltage Dielectric Isolation Process, this Latch-Up Free IC can directly drive 6 IGBT or MOSFET gates in


    Original     		ECN3053F ECN3053F 620VDC 620VDC 20VDC 49VDC, 10VDC, 49VDC 13MAX ECN3053 high voltage 3-phase motor driver ic application for high gain cmos opamp PDF

    TLP351

    Abstract: TLP351 equivalent TLP251
    Text: New Product Guide 2002-9 IGBT/Power MOSFET Gate Drive Photo-IC Coupler TLP351 The TLP351 photo-IC coupler is capable of driving the gates of IGBTs and power MOSFETs directly for which the addition of a gate resistor is necessary . By employing Bi-CMOS process


    Original     		TLP351 TLP351 36122C-0209 TLP351 equivalent TLP251 PDF

    SP 1191

    Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
    Text: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		MT42C4255 512x4 512-cycle 275mW SP 1191 MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55 PDF