M5M29GB161BWG
Abstract: M5M29GT161BWG
Text: MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
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M5M29GB/T161BWG
216-BIT
576-WORD
BY16-BIT)
M5M29GB/T161BWG
216-bit
M5M29GB161BWG
M5M29GT161BWG
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BY16
Abstract: M5M29GB161BWG M5M29GT161BWG 98000H-9FFFFH
Text: MITSUBISHI LSIs M5M29GB/T161BWG 16,777,216-BIT 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
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M5M29GB/T161BWG
216-BIT
576-WORD
BY16-BIT)
M5M29GB/T161BWG
216-bit
BY16
M5M29GB161BWG
M5M29GT161BWG
98000H-9FFFFH
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BA RV
Abstract: code lock circuit A1D14 RV80
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
BA RV
code lock circuit
A1D14
RV80
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
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M5M28FB800
Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP-12I Notice : This is not a final specification. Some parametric limits are subject to change. 8,388,608-BIT 524,288-WORD BY 16-BIT CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi MobileFLASH M5M28FB/T800VP-12I is 3.3V (read) / 5V (program/erase) high speed 8,388,608bit CMOS boot block Flash Memory with the BGO (Back Ground Operation) feature. The BGO feature of the
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M5M28FB/T800VP-12I
608-BIT
288-WORD
16-BIT)
M5M28FB/T800VP-12I
608bit
M5M28FB/T800VON
M5M28FB800
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D8000H-DFFFFH
Abstract: FE000H-FFFFFH T160A
Text: MITSUBISHI LSIs MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29JB/T160AVP-80,-10 M5M29JB/T160AVP-80,-10 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT
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216-BIT
152-WORD
576-WORD
BY16-BIT)
M5M29JB/T160AVP-80
D8000H-DFFFFH
FE000H-FFFFFH
T160A
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M6MGB/T166S4BWG
Abstract: M6MGT166S4
Text: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
M6MGT166S4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
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M5M29GB/T160BVP-80
216-BIT
152-WORD
576-WORD
BY16-BIT)
M5M29GB/T160BVP
216-bit
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90000H-97FFFH
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T162S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi
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M6MGB/T162S4BVP
216-BIT
16-BIT
304-BIT
288-WORD
16M-bits
48-pin
90000H-97FFFH
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T162S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES • Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi
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M6MGB/T162S2BVP
216-BIT
16-BIT
152-BIT
144-WORD
M6MGB/T162S2BVP
16M-bits
48-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T162S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi
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M6MGB/T162S4BVP
216-BIT
16-BIT
304-BIT
288-WORD
M6MGB/T162S4BVP
16M-bits
48-pin
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Stacked Chip Scale Package
Abstract: T166S2BWG 98000H-9FFFFH MITSUBISHI GATE ARRAY
Text: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
Stacked Chip Scale Package
T166S2BWG
98000H-9FFFFH
MITSUBISHI GATE ARRAY
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T162S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES • Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi
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M6MGB/T162S2BVP
216-BIT
16-BIT
152-BIT
144-WORD
16M-bits
48-pin
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B166-S2
Abstract: No abstract text available
Text: MITSUBISHI LSIs M6MGB/T166S2BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
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M6MGB/T166S2BWG
216-BIT
16-BIT
152-BIT
072-WORD
16-BIT)
M6MGB/T166S2BWG
16M-bits
72-pin
B166-S2
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M6MGB/T166S4BWG
Abstract: M6MGT166S4
Text: MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT 1,048,576 -WORD BY 16-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION FEATURES The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip
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M6MGB/T166S4BWG
216-BIT
16-BIT
304-BIT
144-WORD
16-BIT)
M6MGB/T166S4BWG
16M-bits
72-pin
M6MGT166S4
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Untitled
Abstract: No abstract text available
Text: INAARRYYn. IMIN PPRREELLIM tio ification. al specifica MITSUBISHI LSIs MITSUBISHI LSIs . ecect to changege spbj t at fin a final nono is is an . s is Th e su arar e :eT: hi ictic itsits No e subject to ch Not limlim ricric etet m m ra ra pa pa e e m So Som
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M5M29KB/T800AVP
M5M29KB/T800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
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PS21661-RZ
Abstract: PS21661 PS21661-FR 600V-3A
Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Single-In-Line <Single-In-Line Package Package Intelligent Intelligent Power Power Module> Module> PS21661-RZ/FR PS21661-RZ/FR TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21661-RZ
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PS21661-RZ/FR
PS21661-RZ
PS21661-FR
00V/3A
PS21661-RZ
PS21661
PS21661-FR
600V-3A
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z63n
Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us ing a 0.8 micron drawn twin well silicon gate process
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M6008X
MDS-GA-02-03-91
z63n
t28000
z65n
07in
M6008
mitsubishi lable
fr1s
MITSUBISHI GATE ARRAY
z66n
R12W
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m60013
Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are
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OCR Scan
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MDS-GA-11-90-RK
m60013
M60016
m60011
M60014
z46n
M60030
M60024
Z24N
M60012
m60043
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M5M28FB800
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB800VP-12I ÿome 8388608-BIT 524288-WORD BY 16-BIT CMOS 3.3V/5V BACK GROUND OPERATION FLASH MEMORY * DESCRIPTION The M5M28FB800 is 3.3V(read)/5V(program/ erase) high speed 8388608-bit CMOS boot block Flash Memory suitable for mobile
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OCR Scan
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M5M28FB800VP-12I
8388608-BIT
524288-WORD
16-BIT)
M5M28FB800
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Untitled
Abstract: No abstract text available
Text: bSM^f l SS 0023501 O il • M IT I MITSUBISHILSIs M5M28F016FP,VP,RV-10,-12,-15 -, " <•A0- '■ to ° 16777216-BIT 2097152-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The Mitsubishi M 5M 28F016FP, V P , RV are high - speed 167 77 2 1 6 -bit CMOS Flash Memories suitable for solid state
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OCR Scan
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M5M28F016FP
RV-10
16777216-BIT
2097152-WORD
28F016FP,
M5M28F016FP,
M5M28F016FP.
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs c, M 5 M 2 8 F 0 1 6 F P ,V P ,R V -1 0 ,-1 2 ,-1 5 16777216-BIT 2097152-WORD BY8-BIT CMOS FLASH MEMORY DESCRIPTION The Mitsubishi M 5M 28F016FP, V P , RV are high-speed 16777216-bit CMOS Flash Memories suitable for solid state storage. The M5M28F016FP, VP, RV are fabricated by Nchannel double polysilicon gate for the memory cell and
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16777216-BIT
2097152-WORD
28F016FP,
M5M28F016FP,
097152-w
M5M28F016FP
100ns
M5M28F01
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m5m28f800-12
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB/T800VP-12I 8,388,608-BIT 524,288-WORD BY 16-BIT CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTIO N The Mitsubishi M o b ile F L A S H M5M28FB/T800VP-12I is 3.3V (read) / 5V (program/erase) high speed 8,388,608bit CMOS boot block Flash Memory with the BGO (Back Ground Operation) feature. The BGO feature of the
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OCR Scan
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M5M28FB/T800VP-12I
608-BIT
288-WORD
16-BIT)
M5M28FB/T800VP-12I
608bit
100ms)
m5m28f800-12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs P R E LI M IN A R Y M5M28FB/T800VP-12I Notice : This is not a final specification. Some parametric limits are subject to change. 8,388,608-BIT 524,288-WORD BY 16-BIT CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M obileF L A SH M5M28FB/T800VP-12I is 3.3V (read) / 5V (program/erase) high speed 8,388,608bit CMOS boot block Flash Memory with the BGO (Back Ground Operation) feature. The BGO feature of the
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OCR Scan
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M5M28FB/T800VP-12I
608-BIT
288-WORD
16-BIT)
M5M28FB/T800VP-12I
608bit
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