5962F0623701VXC
Abstract: 5962-06237 RHF43B RHF43BDIE2V RHF43BK-01V RHF43BK1 5962F06237
Text: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Output rail-to-rail
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RHF43B
5962F0623701VXC
5962-06237
RHF43B
RHF43BDIE2V
RHF43BK-01V
RHF43BK1
5962F06237
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5962-06237
Abstract: RHF43B RHF43BDIE2V RHF43BK-01V RHF43BK1 5962f0623701vxc 5962F06237
Text: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output
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RHF43B
5962-06237
RHF43B
RHF43BDIE2V
RHF43BK-01V
RHF43BK1
5962f0623701vxc
5962F06237
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Untitled
Abstract: No abstract text available
Text: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output
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RHF43B
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5962-06237
Abstract: smd transistor marking PA RHF43B RHF43BDIE2V RHF43BK-01V RHF43BK1
Text: RHF43B Rad-hard precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Rail-to-rail output
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RHF43B
5962-06237
smd transistor marking PA
RHF43B
RHF43BDIE2V
RHF43BK-01V
RHF43BK1
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5962-06237
Abstract: RHF43BK-01V RHF43B RHF43BDIE2V RHF43BK1 RHF43BK2 N1215
Text: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Output rail-to-rail
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RHF43B
5962-06237
RHF43BK-01V
RHF43B
RHF43BDIE2V
RHF43BK1
RHF43BK2
N1215
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5962F062371VXC
Abstract: No abstract text available
Text: RHF43B Rad-hard, precision, bipolar, single-operational amplifier Datasheet − production data Features Ceramic Flat-8 • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply
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RHF43B
RHF43B
5962F062371VXC
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AM antenna coil
Abstract: 125 kHz "reader coil" coil antenna TK5561 70 CM ANTENNA AM antenna LF antenna design 356N TK5530 TK5551
Text: U2270B Antenna Design Hints General Information The reader antenna is a series resonance circuit consisting of an inductor, a capacitor and a resistor see figure 1 . CR LR Driver Antenna coil RR Overall resistance Figure 1. Equivalent circuit of the reader antenna
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U2270B
AM antenna coil
125 kHz "reader coil"
coil antenna
TK5561
70 CM ANTENNA
AM antenna
LF antenna design
356N
TK5530
TK5551
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coil antenna
Abstract: U2270b antenna design 70 CM ANTENNA AM antenna coil immobilizer antenna LF antenna design 356N TK5530 TK5551 TK5552
Text: U2270B Antenna Design Hints General Information The reader antenna is a series resonance circuit consisting of an inductor, a capacitor and a resistor see figure 1 . CR LR Driver Antenna coil RR Overall resistance Figure 1. Equivalent circuit of the reader antenna
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U2270B
coil antenna
U2270b antenna design
70 CM ANTENNA
AM antenna coil
immobilizer antenna
LF antenna design
356N
TK5530
TK5551
TK5552
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4a2d
Abstract: CR500AL-8 FT100DM-10 FT100DM-12 FT100DM-16 FT100DM-20 FT100DM-32 FT100DM-36 FT100DM-4 FT100DM-6
Text: s •< e 125 125 125 LO LO LO LO LO LO LO LO LO LO CM CM CSJ CM CM CM CM eM CM CM LO LO LO LO LO CM CM CM CM CM i o LO LO LO LO CM CM CM CM CM LO LO LO LO LO CM CM CM CM CM O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O CZ2> LO LO LO LO LO LO LO LO LO
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2-10ms
CR500AL-8
FT100DM-10
FT100DM-12
FT100DM-16
FT100DM-2
H-101
4a2d
FT100DM-12
FT100DM-16
FT100DM-20
FT100DM-32
FT100DM-36
FT100DM-4
FT100DM-6
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FT300DL-20
Abstract: CR500AL-8 FT100DM-10 FT100DM-12 FT100DM-16 FT100DM-20 FT100DM-32 FT100DM-36 FT100DM-4 FT100DM-6
Text: s •< e 125 125 125 LO LO LO LO LO LO LO LO LO LO CM CM CSJ CM CM CM CM eM CM CM LO LO LO LO LO CM CM CM CM CM i o LO LO LO LO CM CM CM CM CM LO LO LO LO LO CM CM CM CM CM O O O O O O O O O O O O O O O O O O O O O O O O O O O O O O CZ2> LO LO LO LO LO LO LO LO LO
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2-10ms
CR500AL-8
FT100DM-10
FT100DM-12
FT100DM-16
FT100DM-2
H-101
FT300DL-20
FT100DM-12
FT100DM-16
FT100DM-20
FT100DM-32
FT100DM-36
FT100DM-4
FT100DM-6
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SLC-075S-3
Abstract: No abstract text available
Text: 125/250 MHz Band Chip Multilayer Coupler \ / Model No. SLC-075S-[ ] Equivalent Circuits Shape & Size r m i A m D In (D Out @ Coupling Port (D Isolation Port CM <D % , © € 1 -6 V . unit (mm Specifica ions P/N SLC-075S-1 Frequency Range Coupling
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SLC-075S-[
SLC-075S-1
125-150MHz
SLC-075S-2
150-200MHz
SLC-075S-3
200-250MHZ
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Untitled
Abstract: No abstract text available
Text: 125 / 250 MHz Band Chip Multilayer Coupler \ / Model No. SLC-150S-H Shape & Size Equivalent Circuits <D "J o o> %i f « C ©A cn CM CO c/> \ 3 e /' < > Specifications Frequency PIH Range Coupling € <D>/ * D 1 <- Insertion Loss 1-6- © In (D Out @ Coupling Port
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SLC-150S-H
SLC-150S-1
125-150MHz
SLC-150S-2
150-200MHz
SLC-150S-3
200-250MHZ
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Bus Buffer w ith 3 -S ta te Control Inputs M C 74V H C 125 The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CM OS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining C M O S low power
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MC74VHC125
Colorado802
51Ting
b3b7E52
MC74VHC125/D
DL203
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Untitled
Abstract: No abstract text available
Text: SMOKE DETECTOR WITH INTERCONNECT AND TIMER The A 5368C A is a low -current, CM OS circuit providing all o f the required features for an ionization-type sm oke detector. A netw orking capability allows as m any as 125 units to be interconnected so that if
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5368C
UL217.
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Untitled
Abstract: No abstract text available
Text: 5348 SMOKE DETECTOR W ITH INTERCONNECT AND TIMER T IM E R STA R T I/O L O W -V S E T The A5348CA is a low-current, CM OS circuit providing all of the required features for an ionization-type sm oke detector. A networking capability allows as m any as 125 units to be interconnected so that if
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A5348CA
UL217.
WC-005
WC-004
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transistor gl 1117
Abstract: Transistor gl 1117 B IDT75C19x100 LM113 equivalent DSC5001
Text: 1 9-BIT CM OS VIDEO DAC IDT75C19 Inæ ^M ted D e v ice T e ch n o k^y Iru FEATURES: DESCRIPTION: • Graphics-ready The IDT75C19 is a 70/100/125 MegaSample per Second MSPS , 9-blt Digital to Analog Converter, it can directly drive a doubly terminated 75Q load to levels compatible with RS-343A.
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IDT75C19
TDC1018
125MHz
400mW
24-pln
24-pin
28-pin
MIL-STD-883,
IDT75C19
transistor gl 1117
Transistor gl 1117 B
IDT75C19x100
LM113 equivalent
DSC5001
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R M - 6 5 4 / 8 8 3 1 0 2 4 x 4 CM O S RAM August 1996 Features • 1 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tandby. 125^W Max
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MIL-STD883
35mW/MHz
HM-6514/883
47ki2
100kHz
00bfl
HM-6514/883
M3D2271
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hm3-6514-9
Abstract: No abstract text available
Text: H /l/7 -6 5 7 4 h a r r is È S E M I C O N D U C T O R U U W U M 1024 X 4 CM O S RAM August 1996 Features Description • Low Power S ta n d b y . 125^W Max • Low Power O p e ra tio n . 35mW /MHz Max
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HM-6514
hm3-6514-9
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IC 7436
Abstract: No abstract text available
Text: — .100 [2.54] TYP. - - . 0 5 0 [1.27] TYP. DATE REV ECN APP’D. BY 1-16-06 A4 7436 JM 3 -20 -0 6 A5 7548 TRM 3-2-11 A6 9158 TRM m CN .050 [1.27]— 0.035 [0.89] ±.003 [0.08] 8 — $ 1 0 0 0 6 [0-15Ï1 pin #1 S > CM 1 e B .125 [3.18] w rfr~l f t 10.006 [0.151
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T318l
PR026-01.
CT710021
IC 7436
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7820A
Abstract: 7820X 7820J 8820J 8820AJ DM8820AJ
Text: Am78/8820-Am78/8820A Dual Differential Line Receivers Distinctive Characteristics: • Dual d iffe re n tia l receiver pin-for-pin equivalent to the National 7 8 /882 0 and 78 /8 8 2 0 A • 500m V sensitivity at ±3V comm on mode 1V sensitivity at ±15V com m on mode
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Am78/8820-Am78/8820A
L-STD-883
170f2)
7820A
7820X
7820J
8820J
8820AJ
DM8820AJ
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4034A
Abstract: rca 4039ae 4034AE CM4011AE CD4000AE CM4000 CM4000AE CM4001AE CM4002AE CM4011A
Text: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS Equivalent to R C A CD4000AE Series G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the use of a P-type well for N -channel devices
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CM4000
CD4000AE
4044AE
4036AE
4048AE
4034A
rca 4039ae
4034AE
CM4011AE
CM4000AE
CM4001AE
CM4002AE
CM4011A
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Untitled
Abstract: No abstract text available
Text: IDT54/74FCT373/A/C IDT54/74FCT533/A/C IDT54/74FCT573/A/C FAST CMOS OCTAL TRANSPARENT LATCHES In tegra te d D e vice T ech n o lo g y , In c. FEATURES DESCRIPTION • IDT54/74FCT373/533/573 equivalent to FAST speed and drive • IDT54/74FCT373A/533A/573A up to 30% faster than
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IDT54/74FCT373/A/C
IDT54/74FCT533/A/C
IDT54/74FCT573/A/C
IDT54/74FCT373/533/573
IDT54/74FCT373A/533A/573A
MIL-STD-883,
IDT54/74FCT373/A/C,
IDT54/74FCT573/A/CRING
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Untitled
Abstract: No abstract text available
Text: FAST C M O S O C T A L T R A N S C E IV E R / REGISTER PRELIMINARY ¡DTS^/^FCTe^e/A IDT54/74FCT648/A FEA T U R ES : DESCRIPTIO N : • IDT54/74FCT646 and IDT54/74FCT648 equivalent lo FAST speed; The IDT54/74FCT646/A and IDT54/74FCT648/A consist of a bus transceiver circuit with 3-state D-type flip-flops and control cir
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IDT54/74FCT648/A
IDT54/74FCT646
IDT54/74FCT648
IDT54/74FCT646/A
IDT54/74FCT648/A
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5A/ESD 138C
Abstract: No abstract text available
Text: FAST CMOS 1-OF-8 DECODER IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C In tegrated D evice T ec h n o lo g y, Inc. FEATURES: DESCRIPTION: • IDT54/74FCT138 equivalent to FAST speed The IDT54/74FCT138/A',C are 1-of-8 decoders built using advanced CEMOS™ , a dual metal CM OS technology. The
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IDT54/74FCT138
IDT54/74FCT138A
IDT54/74FCT138C
IDT54/74FCT138/A'
IDT54/74FCT138/A/C
IDT54/74FCT138/
MIL-STD-883,
5A/ESD 138C
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