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    CLT4160 Search Results

    CLT4160 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLT4160 Clairex Electronics 40 V, silicon NPN planar expitaxial phototransistor Scan PDF
    CLT4160 Clairex Electronics Silicon NPN Planar Epitaxial Phototransistors Scan PDF
    CLT4160 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    CLT4160 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    CLT4160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor 3TY

    Abstract: CLED400 CLT4140 CLT4150 CLT4160
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300jusec. 214E711 70-c/i Transistor 3TY CLT4160

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160 CLT400
    Text: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    PDF GQ007LG CLT4140 CLT4150 CLT4160 CLT4000 CLED400 20mW/cm2 28544K. 300psec. CLT4160 CLT400

    LT414

    Abstract: LT4140 LT416
    Text: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 LT414 LT4140 LT416

    CLED400

    Abstract: CLT4140 CLT4150 CLT4160
    Text: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit


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    PDF 0DQ10Q7 CLT4140 CLT4150 CLT4160 CLT4000 CLED400 300Hsec. CLT41 CLT4160

    CLT4160

    Abstract: No abstract text available
    Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed


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    PDF CLT4140 CLT4150 CLT4160 CLT4000 CLED400 -25ma 300jusec. Em57t CLT4160

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    TIL78

    Abstract: photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til78 OCP71 sp8309 sp8311 3n57 2N577 TIL-78 photo TIL78 1N4378

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF

    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055

    Untitled

    Abstract: No abstract text available
    Text: 4QE D Hi 3 4 ^ ^ 7 3 S D0Q1Q33 5 E3SENI FASCO INDS/ SENISYS CLED400 Gallium Arsenide Infrared Emitting Diode •*.092 - GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded m a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF D0Q1Q33 CLED400 CLED400 CLT4140, CLT4160 CLR4180

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


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    PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    CLED400

    Abstract: CLR4180 CLT4140 CLT4160 DDD1033 DIODE s04 a
    Text: MOE D H 34^730 F AS C O INDS/ DD D1 0 3 3 S HISENI SENISYS CLED400 1 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF DDD1033 CLED400 CLED400 CLT4140, CLT4160 CLR4180 CLT4140 DIODE s04 a

    MAL100

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Text: 1TE D CLAIREX ELECTRONICS DIV • 2 1 4 a 7 T ï □ Q O a ? f it . 1 1- q i - l l CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern.


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180 Ips20mA MAL100 CLT4140

    Untitled

    Abstract: No abstract text available
    Text: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    D1302

    Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    Bvn 10k

    Abstract: CLED400 CLR4180 CLT4140 CLT4160
    Text: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,


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    PDF CLED400 CLED400 CLT4140, CLT4160 CLR4180 Bvn 10k CLT4140

    TIL78

    Abstract: 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 2SA124 SMT102 2sa123 2sa155 AF101 2N534 MA520 maa 550 TF65