2SB1462
Abstract: 2SD2216 SC-75
Text: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open)
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2SB1462
2SD2216
SC-75
2SB1462
2SD2216
SC-75
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2SB1218A
Abstract: 2SD1819A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05
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Original
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2002/95/EC)
2SB1218A
2SD1819A
2SB1218A
2SD1819A
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2SB1320A
Abstract: 2SD1991A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf
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Original
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2002/95/EC)
2SB1320A
2SD1991A
2SB1320A
2SD1991A
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2SB0642
Abstract: 2SB642
Text: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
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2SB0642
2SB642)
2SB0642
2SB642
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2SB0709A
Abstract: 2SB709A 2SD0601A 2SD601A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10
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Original
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2002/95/EC)
2SB0709A
2SB709A)
2SD0601A
2SD601A)
SC-59
2SB0709A
2SB709A
2SD0601A
2SD601A
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PDF
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2SB0709A
Abstract: 2SB709A XP04401 XP4401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04401 (XP4401) Silicon PNP epitaxial planar type 0.2±0.05 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For general amplification 1 5˚ ue
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Original
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2002/95/EC)
XP04401
XP4401)
2SB0709A
2SB709A
XP04401
XP4401
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PDF
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XN02401G
Abstract: 2SB0709A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter
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Original
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2002/95/EC)
XN02401G
2SB0709A
XN02401G
2SB0709A
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PDF
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2SB0709A
Abstract: 2SB709A XN02401 XN2401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401 (XN2401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05
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Original
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2002/95/EC)
XN02401
XN2401)
2SB0709A
2SB709A
XN02401
XN2401
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XN1401
Abstract: 2SB0709A 2SB709A XN01401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401 (XN1401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05
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2002/95/EC)
XN01401
XN1401)
XN1401
2SB0709A
2SB709A
XN01401
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PDF
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2SB1218G
Abstract: 2SD1819G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es
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Original
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2002/95/EC)
2SB1218G
2SD1819G
2SB1218G
2SD1819G
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PDF
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2SB0709A
Abstract: XN01401 XN01401G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter
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Original
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2002/95/EC)
XN01401G
2SB0709A
2SB0709A
XN01401
XN01401G
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PDF
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2SB0709A
Abstract: 2SB709A XN06401 XN6401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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Original
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2002/95/EC)
XN06401
XN6401)
2SB0709A
2SB709A
XN06401
XN6401
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PDF
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XP02401
Abstract: 2SB0709A 2SB709A XP2401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type Unit: mm (0.425) For general amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue
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Original
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2002/95/EC)
XP02401
XP2401)
XP02401
2SB0709A
2SB709A
XP2401
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PDF
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2SB0709A
Abstract: XN04401G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in
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Original
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2002/95/EC)
XN04401G
2SB0709A
XN04401G
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PDF
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XN04401
Abstract: 2SB0709A 2SB709A XN4401
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401 (XN4401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05
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Original
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2002/95/EC)
XN04401
XN4401)
XN04401
2SB0709A
2SB709A
XN4401
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PDF
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2SA999
Abstract: Silicon PNP epitaxial cl 100 hie hre hfe
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.
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OCR Scan
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2SA999
2SA999
100mA,
-10mA)
SC-43
270Hz
X10-3
Silicon PNP epitaxial
cl 100 hie hre hfe
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PDF
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BC846A
Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
Text: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications
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OCR Scan
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BC846A
BC848C
BC856-BC858)
OT-23,
MIL-STD-202,
BC847C
BC846B
BC848A
BC847A
BC847B
BC848B
BC848C
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PDF
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BC560 equivalent
Abstract: bc556 equivalent bc 147 equivalent bc560 BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558
Text: BC556. . . BC560 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The types BC556 and BC557 are available in groups A and B, however, the types BG558,
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OCR Scan
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BC556
BC560
BC556
BC557
BG558,
BC559
BC560
BC546
BC560 equivalent
bc556 equivalent
bc 147 equivalent
BC557 equivalent
bc557 b 011
bc560 noise figure
bc546 equivalent
bc 147 transistor
BG558
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PDF
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2sc3052
Abstract: MARKING HRA MARKING XL
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.
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OCR Scan
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2SC3052
2SC3052
100mA,
270Hz
MARKING HRA
MARKING XL
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PDF
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2sa1235
Abstract: ha15090
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.
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OCR Scan
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2SA1235
2SA1235
-100mA,
-10mA)
O-236
SC-59
270Hz
ha15090
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PDF
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BC559
Abstract: BC557 hie hre hfe cl 100 hie hre hfe
Text: BC556 THRU BC559 Small Signal Transistors PNP TO-92 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail
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OCR Scan
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BC556
BC559
BC557
BC558
BC559
BC546
BC549
BC556.
BC557 hie hre hfe
cl 100 hie hre hfe
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5213 FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5213 is a resin sealed silicon NPN epitaxial type transistor. It designed with high voltage, high hFE an d high tr.
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OCR Scan
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2SC5213
2SC5213
2SA1948.
200MHz
150to800
500mW
SC-62
270Hz
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PDF
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2SA904A
Abstract: 2SA904 cl 100 hie hre hfe
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to
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OCR Scan
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2SA904A
2SA904A
-120V
150MHz
270Hz
X10-3
2SA904
cl 100 hie hre hfe
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PDF
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MEF250
Abstract: 2sa1602 mg 2SA1602
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1602 is a super mini package resin sealed silicon PNP epitaxial Unit:mm OUTLINE DRAWING 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.
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OCR Scan
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2SA1602
2SA1602
2SC4154.
SC-59
2SA1235.
-100mA
-10mA)
270HZ
270Hz
X10-3
MEF250
2sa1602 mg
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PDF
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