SCANPSC110F
Abstract: SCANPSC110FDMQB SCANPSC110FFMQB SCANPSC110FLMQB SCANPSC110FSC SCANPSC110FSCX
Text: General Description Features The SCANPSC110F Bridge extends the IEEE Std. 1149.1 test bus into a multidrop test bus environment. The advantage of a hierarchical approach over a single serial scan chain is improved test throughput and the ability to remove a
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SCANPSC110F
32-bit
cou85
ds011570
SCANPSC110FDMQB
SCANPSC110FFMQB
SCANPSC110FLMQB
SCANPSC110FSC
SCANPSC110FSCX
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64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: C1996 SCANPSC110F SCANPSC110FDMQB SCANPSC110FFMQB SCANPSC110FLMQB SCANPSC110FSC SCANPSC110FSCX
Text: SCANPSC110F SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port IEEE1149 1 System Test Support General Description Features The SCANPSC110F Bridge extends the IEEE Std 1149 1 test bus into a multidrop test bus environment The advantage of a hierarchical approach over a single serial scan
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SCANPSC110F
IEEE1149
64 CERAMIC LEADLESS CHIP CARRIER LCC
C1996
SCANPSC110FDMQB
SCANPSC110FFMQB
SCANPSC110FLMQB
SCANPSC110FSC
SCANPSC110FSCX
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Untitled
Abstract: No abstract text available
Text: NJM2745 QUAD OPERATIONAL AMPLIFIER GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/ Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,
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NJM2745
NJM2745
NJM2745V
NJM2745M
15MHz
DMP14
NJM27RL
20kHz
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Untitled
Abstract: No abstract text available
Text: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,
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NJM2745
NJM2745
NJM2745V
NJM2745M
15MHz
20kHz
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DMP14
Abstract: EMP14 NJM2745 NJM2745D NJM2745E NJM2745M NJM2745V SSOP14
Text: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,
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NJM2745
NJM2745
NJM2745D
NJM2745E
NJM2745M
NJM2745V
15MHz
20kHz
DMP14
EMP14
NJM2745D
NJM2745E
NJM2745M
NJM2745V
SSOP14
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Untitled
Abstract: No abstract text available
Text: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,
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NJM2745
NJM2745
NJM2745D
NJM2745E
NJM2745M
NJM2745V
15MHz
t20dB,
20kHz
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DMP14
Abstract: No abstract text available
Text: NJM2745 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION NJM2745 is quad operational amplifier with low voltage noise 5nV/√Hz @f=1kHz with high bandwidth and low distortion. These features may be used in audio signal processing by high-level audio usages such as hi-end car audio,
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NJM2745
NJM2745
NJM2745D
NJM2745M
NJM2745V
15MHz
20kHz
DMP14
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Untitled
Abstract: No abstract text available
Text: . . . m G ^ B O B flD M A IR V in te l ¡PLD22V10 FAST 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents • tpo 10 ns, 71.4 MHz with Feedback, 100 MHz with No Feedback ■ Typical Ice = 90 mA @15 MHz ■ 1-Micron CHMOS HIE EPROM
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PLD22V10
10-MACROCELL
22V10
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diode 5.1B3
Abstract: 74LVT16245DL sq 1b4 1 74LVT 74LVT16245 74LVT16245DGG LVT16245 51B3 Varo Semiconductor diode
Text: PHILIPS INTERNATIONAL bSE D • 711C A2b Q D b W a Philips Semiconductor* Low Voltage Products 3.3V ABT 16-b it transceiver with 3-state outputs 74LVT16245 This device is an 16-bit transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. Hie
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74LVT16245
16-bit
64mA/-32mA
500mA
74LVT
10MHz
500ns
diode 5.1B3
74LVT16245DL
sq 1b4 1
74LVT16245
74LVT16245DGG
LVT16245
51B3
Varo Semiconductor diode
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U206
Abstract: No abstract text available
Text: HD74BC645A Octal Bus Transceivers With 3 State Outputs The HD74BC645A provides high drivability and operation equal to or better than high speed bipolar standard logic IC by using Bi-CMOS process, Hie device features low power dissipation that is about 1/5 of high speed bipolar logic IC. When
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HD74BC645A
HD74BC645A
U206
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Untitled
Abstract: No abstract text available
Text: in te i MILITARY ÍPLD22V10 FAST 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents 1-Micron CHMOS HIE EPROM Technology, UV-Erasable programmable “Security Bit” Allows Total Protection of Proprietary Designs 100% Generically Tested Logic Array
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PLD22V10
10-MACROCELL
22V10
300-mil
24-Pin
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APT1001R1AN
Abstract: APT1001R3AN
Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT1001R1AN
APT901R1
APT1001R3AN
APT901R3AN
901R1AN
1001R1
901R3AN
1001R3AN
O-204AA)
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PLD22V10
Abstract: NPLD22V10
Text: intei . ¡PLD22V10-10, -15, -25 HIGH PERFORMANCE 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents • tpo 10 ns, 95.2 MHz with Feedback, 100 MHz with No Feedback ■ 1-Micron CHMOS HIE EPROM Technology ■ Typical Iqc = 90 mA @ 15 MHz
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PLD22V10-10,
10-MACROCELL
22V10
300-mil
24-Pin
28-Pin
22V10
PLD22V10
NPLD22V10
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Untitled
Abstract: No abstract text available
Text: W h p \ HEW LETT V J tiM P A C K A R D High CMR, High Speed TTL Compatible Optocoupler Technical Data 6N137 HCPL-2601 HCPL-2611 D escription • In tern al S hield for H igh C om m on M ode R ejection CMR HCPL-2601: 1000 V/ns at Vc„ = 5 0 V HCPL-2611: 5000 V/ns at
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6N137
HCPL-2601
HCPL-2611
HCPL-2601:
HCPL-2611:
E55361)
HCPL5600/1)
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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HIGH VOLTAGE DIODE 6kv
Abstract: ESJA58-06A DIODE 6kv
Text: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t
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ESJA58-06A
H04-004-07
ESJA58-06A
ESJA58-CDA
HIGH VOLTAGE DIODE 6kv
DIODE 6kv
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HIGH VOLTAGE DIODE 6kv
Abstract: ESJA58-06A 5c 6kv DIODE 6kv 10ma 6kv diode IRz 24 N
Text: DATE NAME CHECKED _ —" t DWG.NO. m a la ria l and Hie Inform ation herein Is Ihe prop erty ol TuJI Electric Co.,Lid. They shall be neither re p ro d u c e d , co p ie d , lent, or d isclo se d In any way w h a ts o e v e r lor the mo ot a n y third party nor used for the m u n tiln ch irin g p u rp o se s w ith o u t
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ESJA58-06A
H04-004-07
ESJA58-06A
ESJA58-CDA
HIGH VOLTAGE DIODE 6kv
5c 6kv
DIODE 6kv
10ma 6kv diode
IRz 24 N
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OC-106 94V0 C
Abstract: SR502 SR503 SR504 SR505 SR506
Text: HIED _SR502 - SR506 IIW IU HIGH CURRENT SCHOTTKY BARRIER RECTIFIER INCORPORATED Features • • • • • Plastic package has U n d e rw rite rs Lab fla m m a b ility C lassificatio n 94V-0 H igh c u rre n t c a p a b ility and lo w fo rw a rd d ro p
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SR502
SR506
MIL-STD-202,
300ms
OC-106 94V0 C
SR503
SR504
SR505
SR506
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2sk2975
Abstract: 157-299 01 139706 transistor 16870 72477 17053 cetie
Text: MITSUBISHI RF POWER MOS FET 2SK2975 SILICON MOS FET TYPE DESCRIPTION 2SK2975 «S a MOS FET typ« transistor spcofically designed tor VHFrtJHF power air«>Hie<Siipp<»caUO<£ FEATU R ES • High power >*n:Gpcoa.4<Jß Ö Voo-9.6V .<-450M H / Rrv-30dBm • H Q fi e m c n !rc y :W % typ
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2SK2975
-450M
Rrv-30dBm
2sk2975
157-299 01
139706
transistor 16870
72477
17053
cetie
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TELEFUNKEN U2538B
Abstract: No abstract text available
Text: Tem ic U2538B TELEFUNKEN Semiconductors IR Receiver for Data Communication Description The IC U2538B is a complete IR receiver for data communication. Hie useful input signals aie separated by a special input circuit and amplified by a gain-controlled amplifier. The bandpass filter suppresses the off-band
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U2538B
U2538B
TELEFUNKEN U2538B
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D • 4302271 D0 2 1 4 Sb T * H A S 3875081 G E SOLID STATE 01E 13642 D • T-5Z-M-00 CD4049A, CD4050A Types CMOS Hex Buffer/Converters CD4049A—Inverting Type CD4050A—Non-Inverting Type Hie CD4049A and CD4050A are inverting and non-inverting hex buffers, respectively,
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T-5Z-M-00
CD4049A,
CD4050A
CD4049Aâ
CD4050Aâ
CD4049A
92CS19949R2
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AE 1600-S
Abstract: No abstract text available
Text: 2SK2165-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R IE S • Features ■ Outline Drawings • Hie|h current • Low on-resistance • No secondary breakdown • Low driving power • Hitjh forward Transconductance • Avulanche-proof
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2SK2165-01
AE 1600-S
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Untitled
Abstract: No abstract text available
Text: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak
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D0QM23H
KBPC3005
MIL-STD-202
DO-15
0201AD
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x2210a
Abstract: No abstract text available
Text: 256 Bit Commercial X2210A Hier 64 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles • Access Time of 250 ns Max. • Nonvolatile Store Inhibit: Vcc = 3V Typical
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X2210A
18-Pin
RR-504,
X2210A
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