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    CJE MARKING DIODE Search Results

    CJE MARKING DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    CJE MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    Original     		PDF CMHZ4099 CMHZ4125 500mW, CMHZ4099 OD-123 200mA CMHZ4119 CMHZ4120 CMHZ4121 CMHZ4122

    CJE marking diode

    Abstract: Zener diode sod123 marking code 14 CJD marking diode CMHZ4104 MARKING CODE ckh Zener diode 183 CMHZ4099 CMHZ4100 CMHZ4102 CMHZ4105
    Text: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    Original     		PDF CMHZ4099 CMHZ4125 500mW, CMHZ4099 OD-123 100mA CMHZ4119 CMHZ4120 CMHZ4121 CMHZ4122 CJE marking diode Zener diode sod123 marking code 14 CJD marking diode CMHZ4104 MARKING CODE ckh Zener diode 183 CMHZ4100 CMHZ4102 CMHZ4105

    "Marking Code 183" Zener diode

    Abstract: CJD marking diode marking CJD Zener diode 183 marking ckf CJE marking diode Low Noise Zener Diode Zener diode sod123 marking code 14 marking 297 CMHZ4104
    Text: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    Original     		PDF CMHZ4099 CMHZ4125 500mW, OD-123 200mA CMHZ4116* CMHZ4117* CMHZ4118* CMHZ4119* "Marking Code 183" Zener diode CJD marking diode marking CJD Zener diode 183 marking ckf CJE marking diode Low Noise Zener Diode Zener diode sod123 marking code 14 marking 297 CMHZ4104

    Untitled

    Abstract: No abstract text available
    Text: CMHZ4099 THRU CMHZ4125 SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed


    Original     		PDF CMHZ4099 CMHZ4125 500mW, OD-123 100mA CMHZ4119 CMHZ4120 CMHZ4121 CMHZ4122

    Zener diode 183

    Abstract: CMHZ4104 CJE marking diode marking CKF CMHZ4099 CMHZ4100 CMHZ4101 CMHZ4102 CMHZ4103 CMHZ4106
    Text: CMHZ4099 THRU CMHZ4125 SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed


    Original     		PDF CMHZ4099 CMHZ4125 500mW, OD-123 100mA CMHZ4119 CMHZ4120 CMHZ4121 CMHZ4122 Zener diode 183 CMHZ4104 CJE marking diode marking CKF CMHZ4100 CMHZ4101 CMHZ4102 CMHZ4103 CMHZ4106

    Low Noise Zener Diode

    Abstract: Zener diode 183 marking CKF 5 volts ZENER DIODE marking CJD CMHZ4104 CMHZ4099 CMHZ4100 CJE marking diode CMHZ4102
    Text: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    Original     		PDF CMHZ4099 CMHZ4125 500mW, OD-123 200mA CMHZ4123* CMHZ4124* CMHZ4125* Low Noise Zener Diode Zener diode 183 marking CKF 5 volts ZENER DIODE marking CJD CMHZ4104 CMHZ4099 CMHZ4100 CJE marking diode CMHZ4102

    Untitled

    Abstract: No abstract text available
    Text: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF BAV99 AEC-Q101 J-STD-020 MIL-STD-202, DS12007

    ex marking code diodes

    Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
    Text: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF BAV99 AEC-Q101 J-STD-020 MIL-STD-202, DS12007 ex marking code diodes SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q

    TRANSISTOR MARKING YB

    Abstract: BFP405F marking al
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP405F marking al

    TRANSISTOR MARKING FA

    Abstract: EHA07307 CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F TRANSISTOR MARKING FA EHA07307 CJE marking diode

    marking ams

    Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 Dec-07-2001 marking ams TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR

    TRANSISTOR MARKING YB

    Abstract: TSFP-4 BFP405F CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F 100MHz. EHA07307 Dec-07-2001 TRANSISTOR MARKING YB TSFP-4 BFP405F CJE marking diode

    BFP405F

    Abstract: BFP420F
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F BFP405F BFP420F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    Untitled

    Abstract: No abstract text available
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F

    BFP405F

    Abstract: BFP420F TSFP-4
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP405F BFP405F BFP420F TSFP-4

    BFP420F

    Abstract: No abstract text available
    Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420F BFP420F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    marking 222 zener diode

    Abstract: Zener Diode LF marking marking FZM t-75 hv diode Zener diode 183 zener diode marking 222 zener diode marking ZT CJD marking diode marking CJD T-75 A HIGH VOLTAGE DIODES
    Text: Central" CMHZ4099 THRU CMHZ4125 Sem iconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    OCR Scan     		PDF CMHZ4099 CMHZ4125 500mW, 200mA IMP30 OD-123 OD-123 marking 222 zener diode Zener Diode LF marking marking FZM t-75 hv diode Zener diode 183 zener diode marking 222 zener diode marking ZT CJD marking diode marking CJD T-75 A HIGH VOLTAGE DIODES

    marking CJD

    Abstract: Zener Diode LF marking MARKING CODE N0 CJE marking diode CMHZ4104
    Text: Central CMHZ4099 THRU CMHZ4125 Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low


    OCR Scan     		PDF CMHZ4099 CMHZ4125 500mW, 200mA OD-123 OD-123 31-October marking CJD Zener Diode LF marking MARKING CODE N0 CJE marking diode CMHZ4104

    transistor marking BMs

    Abstract: siemens rs 806 siemens transistor BGA427 BMS 13-81
    Text: SIEMENS BGA 427 Si-MMIC-Amplifier in SIEG ET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 18,5 dB at 1.8 GHz appl.1 gain |Sgi |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (Vb=3V, /d=9.4itiA)


    OCR Scan     		PDF 25-Technologie Q62702-G0067 EHA07382 de/Semiconductor/products/35/35 transistor marking BMs siemens rs 806 siemens transistor BGA427 BMS 13-81

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz


    OCR Scan     		PDF BGA420 25-Technology OT343 Q62702-G0057

    a03 dbm

    Abstract: marking code 8Ff 661 a03 mmic a03 marking A03 BGA420 GPS05605 Q62702-G0057
    Text: SIEM ENS BGA420 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz


    OCR Scan     		PDF BGA420 25-Technology OT343 BGA420 Q62702-G0057 a03 dbm marking code 8Ff 661 a03 mmic a03 marking A03 GPS05605