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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power Management MOSFETS-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design
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2-08L-B
CJ5853DC
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CJ5853DC
Abstract: marking 27A DIODE mosfet low vgs 1A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design
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Original
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PDF
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2-08L-B
CJ5853DC
CJ5853DC
marking 27A DIODE
mosfet low vgs 1A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode DFNWB3×2-08L-B FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Ultra low VF z Including a CJ2301 MOSFET and a MBR0520 Schottky
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2-08L-B
CJ5853DC
2-08L-B
CJ2301
MBR0520
CJ5853DC
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design
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Original
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PDF
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2-08L-B
CJ5853DC
2-08L-B
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