Untitled
Abstract: No abstract text available
Text: A3S80-840 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.840p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage50 Q Factor Min.10k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip
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A3S80-840
Voltage50
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tlo82
Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil
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I-20089
tlo82
TLO82 datasheet
lm147
lm117 3.3V
JM38510/10901BGA
TLO82 application
lm723
LM338 model SPICE
LM723 pin details
lm842
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Untitled
Abstract: No abstract text available
Text: RS 252-8409 No of Cores Largest single wire Outer O/D Copper Figure Cable Weight 12 x 1mm 0.16mm 11.4mm 115.2 kg/km 211 kg/km • • • • • • • • • • • • • • Construction: Conductor: bare copper strands acc. to DIN VDE 0295 class 6 + IEC 60228 class 6
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Untitled
Abstract: No abstract text available
Text: MBR 840 SCHOTTKY DIE SPECIFICATION General Description: TYPE: MBR840 RSingle □Dual Anode 40 V 8 A (Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage
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MBR840
96mil)
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SB840
Abstract: No abstract text available
Text: SB 840 SCHOTTKY DIE SPECIFICATION General Description: 40 V 8 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage
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SB840
96mil)
SB840
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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12A02CH-SPICE
12A02CH
12A02CH
2SB1205
2SB1205
2SC3953-SPICE
2sa1538 spice
2sc3953 spice
2SC5610
MJE-360
2SC4548
2sk4096
2SB631K
2SC5706 equivalent
2SC2911-SPICE
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8402 Multi-Conductor - Two-Conductor, Low-Impedance Cable For more Information please call 1-800-Belden1 Description: 20 AWG stranded 26x34 high-conductivity TC conductors, EPDM rubber insulation, rayon braid, TC braid
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1-800-Belden1
26x34)
26x34
73/23/EEC)
93/68/EEC.
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8404 Multi-Conductor - Four-Conductor Star Quad, Low-Impedance Cable For more Information please call 1-800-Belden1 Description: 20 AWG stranded 19x32 high-conductivity tinned copper conductors, polyethylene insulation, rayon
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1-800-Belden1
19x32)
19x32
73/23/EEC)
93/68/EEC.
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varicap an
Abstract: BB205 BA282 BA479G BA679 BA682 diodes varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
varicap an
BB205
BA282
BA679
diodes varicap
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BB205
Abstract: ir tk 69 104 varicap BA282 BA479G BA679 BA682 varicap diode HR varicap diodes diodes varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
BB205
ir tk 69
104 varicap
BA282
BA679
varicap diode HR
varicap diodes
diodes varicap
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BB205
Abstract: power diodes with V-I characteristics BA282 BA479G BA679 BA682 Varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
BB205
power diodes with V-I characteristics
BA282
BA679
Varicap
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smmd-840
Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
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MIL-PRF-19500
MIL-PRF-38534
smmd-840
MMD-810
MMD832-0805-2
SMMD837-SOD323
MMDB30-0402
MMD-835
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MMD0840
Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
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MIL-PRF-19500
MIL-PRF-38534
MMD0840
MMD810-T86
MMDB30-B11
mmdb30-0402
MMDB30-E28
MMD820-0805-2
SMMD-840
MMD820-E28
SMMD840-SOD323
MMD805-0805-2
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10586 motorola
Abstract: 5962-87793012X Vre1
Text: REVISIONS LTR APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING —-CJŒDBY THIS DRAWMG IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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5962-E903
5962-8779301EX
10586/BEAJC
5962-8779301FX
10586/BFAJC
5962-87793012X
10586M/B2AJC
4S444
54B-904
10586 motorola
Vre1
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adxl 355
Abstract: pj 986 iv PJ 986 L105C
Text: niclixcon ALUMINUM ELECTROLYTIC CAPACITORS PF Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C Low Im pedance, High R eliab ility series Low Impedance Long Life R CJ Approved Anti-Solvent Feature Low impedance and high reliability withstanding 5000 hour load life at +105‘C 3000/2000 hours
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RCJ-03-23C
l-105
120Hz,
203R3
20t/100kHz
-10t/100kHz
C/100kHz
200kHz
0D0233fl
adxl 355
pj 986 iv
PJ 986
L105C
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110v 60 hz ac to 220v 50 hz ac inverter
Abstract: bargraph LCD 138314 62089 COP87L40CJM COP87L40CJN N28B rw2n COP87L42CJN-1N ID-40F
Text: S e m i c o n d u c t o r March 1996 COP87L40CJ/COP87L42CJ microCMOS One-Time Programmable OTP Microcontrollers General Description The COP87L40CJ/COP87L42CJ are members of the COPS 8-bit OTP microcontroller family. It is pin and soft ware compatible to the mask ROM COP84C>CJ/COP842CJ
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COP87L40CJ/COP87L42CJ
COP84C
CJ/COP842CJ
16-bit
110v 60 hz ac to 220v 50 hz ac inverter
bargraph LCD
138314
62089
COP87L40CJM
COP87L40CJN
N28B
rw2n
COP87L42CJN-1N
ID-40F
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17-18L
Abstract: No abstract text available
Text: Outline drawings D im ensions in mm and inch 1 mm = 0.0394" 4 TO-247 SMD TO-220 AB TO-263 AA TO-247 AD E H f 1" i n A 4! M J D o , dT T *T 2 CJ i; 3 I ♦ B f I * H i m F * f A I p- C : A 1. Gate 2. Drain (Collector) 3. Source (Emitter) 4. Drain (Collector)
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O-263
O-220
O-247
16-Pin
17-18L
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SR30D-16S
Abstract: sr30d-24r SR30D-16R 12218 SR30D-24S SR30B-20 SR30B-4 SR30B-6 SR30B-8 SR30C-10S
Text: SR30B-12 SR30B-14 SR30B-16 SR30B-18 SR30B-2 SR30B-20 SR30B-24 SR30B-4 SR30B-6 SR30B-8 SR30C-10R SR30C—IO S SR30C-12R SR30C-12S SR30C-16R 1 1 I I I 1 o o o o o 1200 '1440 ¡300 400 500 Í720 840 960 1080 ; 200 •< 79 - CO tss tsa o o o o o o o o o o o o o o o
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sr30b-12
sr30b-14
sr30b-16
sr30b-18
sr30b-2
SR30B-20
sr30b-24
35MIN
96MAX
-120MAXâ
SR30D-16S
sr30d-24r
SR30D-16R
12218
SR30D-24S
SR30B-4
SR30B-6
SR30B-8
SR30C-10S
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Untitled
Abstract: No abstract text available
Text: DATE NO. REV ISIO N S BY A P P ’D W A V E L E N G T H (J j m l SPECTRA L R E S P O NSE Characteristics I 2S C LIMITS PARAMETER SYMBOL SHORT CIRCUIT CURRENT t lOOfc (} OPEN CIRCUIT VOLT • lOOfc SENSITIVITY t 940 na ( 840 VA V0C 0.30 VOLTS 0.40 TC DARK REVERSE CURRENT 2S°C
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SLD-69C
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Untitled
Abstract: No abstract text available
Text: R EV ISIO N S >.{ W COP« J /a 4 3 o A c / v £4- ~JU{. 7 3 < Z N / & «¿¿¡o ¿=. 1 . Z ./ 7& o 25533 O s / : /S O E X Z .& 3 £*J 2 S Z O O A < a te •s A ix S a exs. CM S 840 8 E AJ- S t J0V8C CNJ a 9CA LC: 2*30* 26 JU A J^0 ¿ t : / /& } -& • J S S
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Untitled
Abstract: No abstract text available
Text: M SH-840 M Quad Simultaneous Sample/Hold with Multiplexer IN N O V A T IO N a n d E X C E L L E N C E FEATURES 4 S im ultaneous sample-holds Internal 4-channel multiplexer 775 nsec acquisition tim e 10V step to 0.01 % includes m ultiplexer 2 Channels with optional X10 gain
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SH-840
32-pin
MSH-840
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FX-311P
Abstract: FT-SFM2SV CN-73-C1 FX-30H AFM2 R10mm FX-311 cn 71 CN-71-C1 FD-AFM2
Text: S U N Íd INSTRUCTION MANUAL Manual Setting Fiber Sensor F X -3 1 1 P SPECIFICATIONS : - -n Type M odel No. Supply voltage Power consum ption NPN output PNP output F X -311 FX-311P 12 to 24V DC ± 10% Ripple P-P 10% o r less 840m W or less (Current consumption 35m A or less at 24V supply voltage)
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FX-311
FX-311P
840mW
100mA
FX-30H,
FX-311P
FT-SFM2SV
CN-73-C1
FX-30H
AFM2
R10mm
cn 71
CN-71-C1
FD-AFM2
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2N443
Abstract: 2N4429
Text: m mmRP Pt'csdiscìs M ic r o m s e m i .‘•'WiWM w « ft?ïèiihK&toffj’ 140 C o m m e rc e Drive M o n tg o m eryville , PA 18936 Te!: <215 631-9 840 2N4429 -4 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS
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2N4429
2N442S
2N443
2N4429
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1x3 berg connector
Abstract: 1x5 berg connector 1x2b 1x30 Si 7722 4KAO
Text: r All rights strictly reserved. Reproduction or issue to third porties in ony form whatever is not permitted without written authority from the proprietor. Property of BERG ELECTRONICS Copyright BERG ELECTRONICS INC. BERG •L I CT R ONI CS Tous droits strictement reserves.
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