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    CITE ELECTRONICS Search Results

    CITE ELECTRONICS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    CITE ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    Untitled

    Abstract: No abstract text available
    Text: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power


    Original     		PDF 00W-1200W 127mm

    400w power supply

    Abstract: No abstract text available
    Text: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power


    Original     		PDF 00W-1200W 127mm 400w power supply

    XCE 145

    Abstract: LIMIT SWITCH XCE 145 FH-832-X HRC Fuse 250V 20A Z165 XG1 connector E181875
    Text: XGen_XCE 1450W ACDC power supply.qxd 19/01/2010 20:06 Page 1 AC/DC Plug & Play Power Supply Series 1340W Standard cite XCE AC/DC Power Supply patents pending Ultra-high efficiency 1U size The XCE addition to the Xgen family of power supplies provides up to an


    Original     		PDF 127mm XCE 145 LIMIT SWITCH XCE 145 FH-832-X HRC Fuse 250V 20A Z165 XG1 connector E181875

    DHT11

    Abstract: DHT-11 Am2303
    Text: Aosong Guangzhou Electronics Co.,Ltd -Tell: +86-020-36380552, +86-020-36042809 Fax: +86-020-36380562 http://www.aosong.com Email: thomasliu198518@yahoo.com.cn sales@aosong.com


    Original     		PDF thomasliu198518 AM2303 AM2303 260Celsius. DHT11 DHT-11

    CITE Electronics

    Abstract: bj39 150055 j 437
    Text: RED INDICATES OR]GUM. DWG SIZE B DASH ND -1 -2 -3 -4 “ 5 -6 CONN TYPE PL30 CJ30 BJ39 PL330 CJ330 BJ339 ASSEMBLE FIG MATERIAL^ PER 2-000B-55 1A 2-0020-55 2A 2-0006-55 3A TAI-121 2-002B-55 IB 2-0027-55 2B 3B 2-0026-55 FIG rxu DATA CONTAINED IN THIS DOCUMENT IS


    OCR Scan     		PDF PL330 CJ330 BJ339 2-000B-55 TAI-121 2-002B-55 4375-2SUNEF-2A B-1500-55 SERIESTWCP-124-3 CITE Electronics bj39 150055 j 437

    P50100506618

    Abstract: No abstract text available
    Text: 3 0 G44 - C a p a c i t é : 4 FI et FE sur languette laiton Clip laiton et bronze l cre F 1< 53N 13N <1e r e FL< 44N &eme FE> 9N Clip acier l ere F 1< 30N I 0 <me FE> 8N 1€f eFE > 30N S E C T IO N A COUPE A A „,taz SECTION Z i BB CC maxi. DD SECTION to,e.


    OCR Scan     		PDF P5C100556613 P50IIÃ 507SI4 P50I0D5O6I3-2 P50108506618 P50100506618

    diode a jonction

    Abstract: S3060
    Text: S G S-THÔP1S0N 7ÔC D | 7c12,î237 QQ07SaS BAT 29, GI SCHOTTKY SMALL SIGNAL DIODES DIODES DE SIGNAL SCHOTTKY | ToS’Qfa „ 5 V without suffix V r r m max = 10 V with suffix G . Vf max g> 10 mA — 550 mV Qs max @ 10 mA = 3 pC F max @ 1 GHz = 7 dB C max @ 0 V = 1 pF


    OCR Scan     		PDF QQ07SaS D75D4 diode a jonction S3060

    U420

    Abstract: No abstract text available
    Text: IRFR/U420A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A M a x @ VDS= 500V


    OCR Scan     		PDF IRFR/U420A U420

    SSH7N90A

    Abstract: No abstract text available
    Text: Advanced SSH7N90A Power MOSFET FEATURES BVDSS - 900 V 1.8 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


    OCR Scan     		PDF SSH7N90A \61tage SSH7N90A

    U2N60

    Abstract: *c1251c
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■


    OCR Scan     		PDF SSR/U2N60A U2N60 *c1251c

    SSH8N80A

    Abstract: No abstract text available
    Text: SSH8N80A Power MOSFET FEATURES - 800 V ^D S o n = 1.5 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V


    OCR Scan     		PDF SSH8N80A SSH8N80A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.)


    OCR Scan     		PDF SSH4N90AS

    Untitled

    Abstract: No abstract text available
    Text: SSH9N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 0.938 £1 (Typ.)


    OCR Scan     		PDF SSH9N90A

    OA 161 diode

    Abstract: SSH10N90A
    Text: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


    OCR Scan     		PDF SSH10N90A OA 161 diode SSH10N90A

    SSH5N80A

    Abstract: No abstract text available
    Text: SSH5N80A A d v a n c e d Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V ■ Low RDS(ON) : 1.824 £1 (Typ.)


    OCR Scan     		PDF SSH5N80A SSH5N80A

    SSH6N70A

    Abstract: No abstract text available
    Text: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)


    OCR Scan     		PDF SSH6N70A SSH6N70A

    SSH4N80AS

    Abstract: DIODE 19 9
    Text: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■


    OCR Scan     		PDF SSH4N80AS SSH4N80AS DIODE 19 9

    SSH5N90A

    Abstract: No abstract text available
    Text: SSH5N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 2.300 £1 (Typ.) 900 V


    OCR Scan     		PDF SSH5N90A SSH5N90A

    SSU2N80A

    Abstract: No abstract text available
    Text: SSU2N80A A d v a n c e d Power MOSFET FEATURES BVDSS - 800 V 6.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V


    OCR Scan     		PDF SSU2N80A SSU2N80A

    ssh6n90

    Abstract: SSH6N90A
    Text: Advanced SSH6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2 . 3 Q. B V DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.)


    OCR Scan     		PDF SSH6N90A ssh6n90 SSH6N90A

    Untitled

    Abstract: No abstract text available
    Text: SSH9N80A FEATURES - 800 V ^ D S o n = 1.3 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V


    OCR Scan     		PDF SSH9N80A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V


    OCR Scan     		PDF SFR/U9224 -250V 200nF>

    SCITEQ Electronics

    Abstract: Sciteq dds-1 DDS-1 "FSK modulator" sciteq A659 821573-1
    Text: Waveformer TM DDS-1 FREQUENCY SYNTHESIZER Most DDSs are used to augment either PLL or mix/filter circuitry, and in such applications the DDS-1 is the industry's most powerful digital signal generator. Examples of such architectures appear below. The Waveformer DDS-1 permits fully


    OCR Scan     		PDF 50-pin SCITEQ Electronics Sciteq dds-1 DDS-1 "FSK modulator" sciteq A659 821573-1