5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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Untitled
Abstract: No abstract text available
Text: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power
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00W-1200W
127mm
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400w power supply
Abstract: No abstract text available
Text: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power
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00W-1200W
127mm
400w power supply
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XCE 145
Abstract: LIMIT SWITCH XCE 145 FH-832-X HRC Fuse 250V 20A Z165 XG1 connector E181875
Text: XGen_XCE 1450W ACDC power supply.qxd 19/01/2010 20:06 Page 1 AC/DC Plug & Play Power Supply Series 1340W Standard cite XCE AC/DC Power Supply patents pending Ultra-high efficiency 1U size The XCE addition to the Xgen family of power supplies provides up to an
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127mm
XCE 145
LIMIT SWITCH XCE 145
FH-832-X
HRC Fuse 250V 20A
Z165
XG1 connector
E181875
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CITE Electronics
Abstract: bj39 150055 j 437
Text: RED INDICATES OR]GUM. DWG SIZE B DASH ND -1 -2 -3 -4 “ 5 -6 CONN TYPE PL30 CJ30 BJ39 PL330 CJ330 BJ339 ASSEMBLE FIG MATERIAL^ PER 2-000B-55 1A 2-0020-55 2A 2-0006-55 3A TAI-121 2-002B-55 IB 2-0027-55 2B 3B 2-0026-55 FIG rxu DATA CONTAINED IN THIS DOCUMENT IS
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PL330
CJ330
BJ339
2-000B-55
TAI-121
2-002B-55
4375-2SUNEF-2A
B-1500-55
SERIESTWCP-124-3
CITE Electronics
bj39
150055
j 437
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P50100506618
Abstract: No abstract text available
Text: 3 0 G44 - C a p a c i t é : 4 FI et FE sur languette laiton Clip laiton et bronze l cre F 1< 53N 13N <1e r e FL< 44N &eme FE> 9N Clip acier l ere F 1< 30N I 0 <me FE> 8N 1€f eFE > 30N S E C T IO N A COUPE A A „,taz SECTION Z i BB CC maxi. DD SECTION to,e.
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P5C100556613
P50IIÃ
507SI4
P50I0D5O6I3-2
P50108506618
P50100506618
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DHT11
Abstract: DHT-11 Am2303
Text: Aosong Guangzhou Electronics Co.,Ltd -Tell: +86-020-36380552, +86-020-36042809 Fax: +86-020-36380562 http://www.aosong.com Email: thomasliu198518@yahoo.com.cn sales@aosong.com
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thomasliu198518
AM2303
AM2303
260Celsius.
DHT11
DHT-11
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diode a jonction
Abstract: S3060
Text: S G S-THÔP1S0N 7ÔC D | 7c12,î237 QQ07SaS BAT 29, GI SCHOTTKY SMALL SIGNAL DIODES DIODES DE SIGNAL SCHOTTKY | ToS’Qfa „ 5 V without suffix V r r m max = 10 V with suffix G . Vf max g> 10 mA — 550 mV Qs max @ 10 mA = 3 pC F max @ 1 GHz = 7 dB C max @ 0 V = 1 pF
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QQ07SaS
D75D4
diode a jonction
S3060
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U420
Abstract: No abstract text available
Text: IRFR/U420A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A M a x @ VDS= 500V
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IRFR/U420A
U420
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SSH7N90A
Abstract: No abstract text available
Text: Advanced SSH7N90A Power MOSFET FEATURES BVDSS - 900 V 1.8 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V
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SSH7N90A
\61tage
SSH7N90A
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U2N60
Abstract: *c1251c
Text: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■
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SSR/U2N60A
U2N60
*c1251c
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SSH8N80A
Abstract: No abstract text available
Text: SSH8N80A Power MOSFET FEATURES - 800 V ^D S o n = 1.5 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V
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SSH8N80A
SSH8N80A
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Untitled
Abstract: No abstract text available
Text: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.)
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SSH4N90AS
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Untitled
Abstract: No abstract text available
Text: SSH9N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 0.938 £1 (Typ.)
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SSH9N90A
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OA 161 diode
Abstract: SSH10N90A
Text: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V
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SSH10N90A
OA 161 diode
SSH10N90A
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SSH5N80A
Abstract: No abstract text available
Text: SSH5N80A A d v a n c e d Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V ■ Low RDS(ON) : 1.824 £1 (Typ.)
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SSH5N80A
SSH5N80A
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SSH6N70A
Abstract: No abstract text available
Text: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)
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SSH6N70A
SSH6N70A
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SSH4N80AS
Abstract: DIODE 19 9
Text: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■
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SSH4N80AS
SSH4N80AS
DIODE 19 9
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SSH5N90A
Abstract: No abstract text available
Text: SSH5N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 2.300 £1 (Typ.) 900 V
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SSH5N90A
SSH5N90A
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SSU2N80A
Abstract: No abstract text available
Text: SSU2N80A A d v a n c e d Power MOSFET FEATURES BVDSS - 800 V 6.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V
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SSU2N80A
SSU2N80A
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ssh6n90
Abstract: SSH6N90A
Text: Advanced SSH6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2 . 3 Q. B V DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.)
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SSH6N90A
ssh6n90
SSH6N90A
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Untitled
Abstract: No abstract text available
Text: SSH9N80A FEATURES - 800 V ^ D S o n = 1.3 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V
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SSH9N80A
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Untitled
Abstract: No abstract text available
Text: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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SFR/U9224
-250V
200nF>
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SCITEQ Electronics
Abstract: Sciteq dds-1 DDS-1 "FSK modulator" sciteq A659 821573-1
Text: Waveformer TM DDS-1 FREQUENCY SYNTHESIZER Most DDSs are used to augment either PLL or mix/filter circuitry, and in such applications the DDS-1 is the industry's most powerful digital signal generator. Examples of such architectures appear below. The Waveformer DDS-1 permits fully
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50-pin
SCITEQ Electronics
Sciteq dds-1
DDS-1
"FSK modulator"
sciteq
A659
821573-1
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