Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CIRCUIT HALL EFFECT AVER Search Results

    CIRCUIT HALL EFFECT AVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    CIRCUIT HALL EFFECT AVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UL497

    Abstract: tp 300 ignition module breakerless ignition systems
    Text: UNISONIC TECHNOLOGIES CO., LTD UL497 Preliminary LINEAR INTEGRATED CIRCUIT HALL EFFECT PICKUP IGNITION CONTROLLER „ DESCRIPTION As an integrated electronic ignition controller for breakerless ignition systems which uses Hall effect sensors, the UTC UL497


    Original     		PDF UL497 UL497 QW-R118-015 tp 300 ignition module breakerless ignition systems

    23gg

    Abstract: No abstract text available
    Text: APX9132G Hall Effect Micro Switch IC Features • • • General Description The APX9132G, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9132G APX9132G, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA 23gg

    A102

    Abstract: A108 B102 JESD-22
    Text: APX9132A Hall Effect Micro Switch IC Features • • • General Description The APX9132A, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9132A APX9132A, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA A102 A108 B102 JESD-22

    Untitled

    Abstract: No abstract text available
    Text: APX9131A Hall Effect Micro Switch IC Features • • • General Description The APX9131A, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9131A APX9131A, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA

    sot-23 p1

    Abstract: A102 APX9132 magnet switch
    Text: APX9132 Hall Effect Micro Switch IC Features General Description • • • The APX9132, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9132 APX9132, sot-23 p1 A102 APX9132 magnet switch

    APX9131

    Abstract: A102 A108 B102 JESD-22 J-STD-020D
    Text: APX9131 Hall Effect Micro Switch IC Features • • • General Description Micro Power Operation for Battery Applications The APX9131, integrated circuit, is an ultra-sensitive, pole Chopper Stabilized Amplifier independent Hall-effect switch with a latched digital output.


    Original     		PDF APX9131 APX9131, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA APX9131 A102 A108 B102 JESD-22 J-STD-020D

    APX9136

    Abstract: No abstract text available
    Text: APX9136 Hall Effect Micro Switch IC Features General Description • • • The APX9136, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9136 APX9136, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA APX9136

    ANPEC

    Abstract: MAGNETIC HEAD circuit A102 A108 APX9132 B102 JESD-22
    Text: APX9132 Hall Effect Micro Switch IC Features General Description • • • The APX9132, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9132 APX9132, JESD-22, MIL-STD-883-3015 VMM200V 1tr100mA ANPEC MAGNETIC HEAD circuit A102 A108 APX9132 B102 JESD-22

    Untitled

    Abstract: No abstract text available
    Text: APX9131 Hall Effect Micro Switch IC Features • • • General Description The APX9131, integrated circuit, is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9131 APX9131, JESD-22, MIL-STD-883-3015 100mA

    A102

    Abstract: APX9131 3 PIN hall effect sensor
    Text: APX9131 Hall Effect Micro Switch IC Features • • • General Description The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. Micro Power Operation for Battery Applications Chopper Stabilized Amplifier


    Original     		PDF APX9131 APX9131 A102 3 PIN hall effect sensor

    HAL320

    Abstract: 320C HAL320UA-E IEC68-2-20 TO-92UA
    Text: MICRONAS Edition July 15, 1998 6251-439-1DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 Differential Hall Effect Sensor IC in CMOS technology Introduction – reverse-voltage protection of VDD-pin – short-circuit protected open-drain output by thermal


    Original     		PDF 6251-439-1DS HAL320 HAL320 320C HAL320UA-E IEC68-2-20 TO-92UA

    sot-89b

    Abstract: HAL320 hall switch ignition HALL Sensor TO92UA temperature sensor TOP marking X1 sot89b
    Text: MICRONAS Edition July 15, 1998 6251-439-1DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 Differential Hall Effect Sensor IC in CMOS technology Introduction – reverse-voltage protection of VDD-pin – short-circuit protected open-drain output by thermal


    Original     		PDF 6251-439-1DS HAL320 OT-89B OT-89A SPGS0022-5-B3/1E sot-89b HAL320 hall switch ignition HALL Sensor TO92UA temperature sensor TOP marking X1 sot89b

    SOT 23 A6 on

    Abstract: No abstract text available
    Text: APX9131 Hall Effect Micro Switch IC Features General Description • • • The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to 3.5 volt operation and a unique clocking scheme reduce the average operating power


    Original     		PDF APX9131 APX9131 OT-23 24F-1. SOT 23 A6 on

    A102

    Abstract: APL9131 APX9131 STD-020C TO92 hall effect SOT23 A7
    Text: APX9131 Hall Effect Micro Switch IC Features General Description • • • The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to 3.5 volt operation and a unique clocking scheme reduce the average operating power


    Original     		PDF APX9131 APX9131 OT-23 A102 APL9131 STD-020C TO92 hall effect SOT23 A7

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171

    Untitled

    Abstract: No abstract text available
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171

    hall smd 4 pin allegro

    Abstract: A1171 A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171 A1171 hall smd 4 pin allegro A1171EEWLT-P AMS-702 IPC7351 MOSFET Based Chopper

    hall smd 4 pin allegro

    Abstract: transistor 702 smd power
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171 hall smd 4 pin allegro transistor 702 smd power

    hall smd 4 pin allegro

    Abstract: A1171
    Text: A1171 Micropower Ultrasensitive Hall Effect Switch Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ The A1171 integrated circuit is an ultrasensitive, Hall effect switch with latched digital outputs and either unipolar or omnipolar magnetic actuation. It features operation at low


    Original     		PDF A1171 hall smd 4 pin allegro

    A3212EEH

    Abstract: MH030 A3212ELHLT application notes
    Text: Data Sheet 27622.61F A3212 MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH 2 x 2 mm MLPD Package A3212EELLT-T The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. This sensor is especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless


    Original     		PDF A3212 A3212 A3212EEH MH030 A3212ELHLT application notes

    1025 smd sensor

    Abstract: No abstract text available
    Text: Data Sheet 27622.61E A3212 MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH 2 x 2 mm MLPD Package A3212EELLT-T The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. This sensor is especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless


    Original     		PDF A3212 A3212 1025 smd sensor

    A3212ELHLT

    Abstract: A3212ELH SMD Hall A3212 A3212EEHLT A3212EELLT-T A3212EUA A3212LLHLT A3212LUA smd hallsensor
    Text: Data Sheet 27622.61G A3212 MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH 2 x 2 mm MLPD Package A3212EELLT-T The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. This sensor is especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless


    Original     		PDF A3212 A3212EELLT-T A3212 A3212ELHLT A3212ELH SMD Hall A3212EEHLT A3212EELLT-T A3212EUA A3212LLHLT A3212LUA smd hallsensor

    8051 microcontroller interface with ir sensors

    Abstract: iron bh curve siemens Mass Air Flow Sensor siemens TLE 4905L TRANSISTOR BH RW TESLA transistor Bipolar Static Induction Transistor ir slotted wheel encoder camshaft sensor target wheel axial sensing real time application of shape memory alloys
    Text: SIEMENS 6 Silicon Hail-Effect Sensors 6.1 Introduction Silicon Hall-Effect Sensors Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HAL320 Differential Hall Effect Sensor 1C in CMOS technology Introduction - reverse-voltage protection of VpD^pin -short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz The HAL320 is a differential Hall switch produced in


    OCR Scan     		PDF HAL320 HAL320