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    CIRCUIT AT MEGA 32 Search Results

    CIRCUIT AT MEGA 32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    CIRCUIT AT MEGA 32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCM8240MD

    Abstract: 8086 hex code TCM8240 DHT 11 an 80171 08123 B 8016 8058 FF124 48208
    Text: TCM8240MD Ver 1.2 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8240MD Ver 1.2 13/Nov/04 TENTATIVE 1.3 Mega pixel sensor chip TCM8240MD is an area color image sensor , at 1.3 Mega-pixels of array resolution 1300x 1040 , incorporating a camera signal processor . The optical format is 1/3.3 inch, of which small size is suitable for


    Original     		PDF TCM8240MD TCM8240MD 13/Nov/04 1300x 8086 hex code TCM8240 DHT 11 an 80171 08123 B 8016 8058 FF124 48208

    Untitled

    Abstract: No abstract text available
    Text: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx

    Untitled

    Abstract: No abstract text available
    Text: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx

    Untitled

    Abstract: No abstract text available
    Text: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx

    Untitled

    Abstract: No abstract text available
    Text: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx

    Littelfuse 2981000

    Abstract: fuse mega
    Text: Bolt-down Fuses MEGA Fuse Rated 32V Specifications Interrupting Rating: Voltage Rating : Operating Temperature Range: Terminals: Mounting Torque: Packaging: 2000A @ 32 VDC 32 VDC -40˚C to + 125˚C Copper Ag available M6 or M8 bolts available 8-14 Nm M6


    Original     		PDF 0298xxx Littelfuse 2981000 fuse mega

    15S200

    Abstract: fuse mega
    Text: Bolt-down Fuses MEGA Fuse Rated 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: 40˚C to + 125˚C Time-Current Characteristics / Schmelzzeit-Grenzwerte % of Rating % des Nennstromes Die von Littelfuse entwickelte und patentierte MEGA-Sicherung


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Bolt-down Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: Voltage Rating: Operating Temperature Range: Housing: Terminals: 2000A @ 32 VDC 32 VDC -40˚C to + 125˚C PPA 33%/35% GF Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx 00-500A

    0298175

    Abstract: ISO 8820-5 300-500A 0298300
    Text: Bolt-down Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available


    Original     		PDF 0298xxx charac504 00-500A 0298175 ISO 8820-5 300-500A 0298300

    jeida 88 pin memory card

    Abstract: jeida dram 88 pin
    Text: DRAM CARD 8 Mega Byte KMCV5322000 3.3V Operating 2M x 32 / 4M x 16 Fast Page Mode G ENER AL DESCRIPTIO N FEATURES • Performance range : The KMCV5322000 is the industry standard high capacity DRAM memory card and consists o( SAMSUNG'S advanced TSOP 1Mx4 DRAM devices


    OCR Scan     		PDF KMCV5322000 x32/x16 jeida 88 pin memory card jeida dram 88 pin

    KMCJ532512

    Abstract: jeida dram 88 pin
    Text: 2 Mega Byte DRAM CARD K M C J532512 512K X 32 / 1 M X 16 F ast P age M ode GENERAL DESCRIPTION FEATURES The KMCJ532512 is the industry standard high capacity DRAM memory card and consists of • Performance range : SAMSUNG'S advanced TSOP 4M B/W DRAM devices.


    OCR Scan     		PDF J532512 KMCJ532512 X32/X16 jeida dram 88 pin

    jeida dram 88 pin

    Abstract: KMCJ5324100
    Text: DRAM CARD 16 Mega Byte KMCJ5324100 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range • The KMCJ5324100 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 4Mx4 DRAM devices. The SAMSUNG memory card family is designed to


    OCR Scan     		PDF KMCJ5324100 x32/x16 KMCJ5324100 KMCJ532410C jeida dram 88 pin

    KMCJ5322000

    Abstract: jeida dram 88 pin
    Text: 8 Mega Byte DRAM CARD KMCJ5322000 2M X 32 / 4M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The KMCJ5322000 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 1Mx4 DRAM devices. The SAMSUNG memory card family is designed to


    OCR Scan     		PDF KMCJ5322000 x32/x16 KMCJ5322000 jeida dram 88 pin

    jeida dram 88 pin

    Abstract: KMCJ5321000
    Text: 4 Mega Byte DRAM CARD KMCJ5321000 1M X 32 / 2M X 16 F a s t P a g e M o d e GENERAL DESCRIPTION FEATURES • Performance range : The KMCJ5321000 is the industry standard high capacity DRAM memory card and consists o SAMSUNG'S advanced TSOP 4M DRAM devices.


    OCR Scan     		PDF KMCJ5321000 x32/x16 KMCJ5321000 jeida dram 88 pin

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: 16 Mega Byte DRAM CARD KMCV5324000 3.3V Operating 4M x 32 / 8M x 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The KMCV5324000 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 4Mx4 DRAM devices


    OCR Scan     		PDF KMCV5324000 x32/x16 jeida dram 88 pin

    jeida dram 88 pin

    Abstract: KMCJ5324000
    Text: 16 Mega Byte DRAM CARD KMCJ5324000 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The K M C J5324000 is the industry standard high tRAC tCAC IRC SAMSUNG'S advanced TSOP 4M x4 DRAM devices. KMCJ5324000 -6 60 ns 15 ns


    OCR Scan     		PDF KMCJ5324000 J5324000 KMCJ5324000 14Mx32 jeida dram 88 pin

    iaa 180

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM53681OOAH Fast Page Mode 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AH is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range1


    OCR Scan     		PDF KMM53681OOAH 8Mx36 KMM5368100AH 24-pin 72-pin KMM536S100AH KMM53601OOAH iaa 180

    KM48C2100AJ

    Abstract: KMM5322208AU KMM532
    Text: DRAM MODULE 8 Mega Byte KMM5322208AU/AUG Fast Page Mode 2Mx32 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5322208AU is a 2M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5322208AU/AUG 2Mx32 5322208AU 322208A 28-pin 16-pin 72-pin KMM5322208AU KM48C2100AJ KMM532

    CX-53

    Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
    Text: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS


    OCR Scan     		PDF KMM53221OOAU 2Mx32 KMM5322100AU 28-pin 72-pin CX-53 KM48C2100A cx53 KMM53221 KM48C2100AJ

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5324000AKV/AKVG Fast Page Mode 4M x32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM5324000AKV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AKV consists of eight CMOS


    OCR Scan     		PDF KMM5324000AKV/AKVG KMM5324000AKV 24-pin 72-pin

    KMM5322000AW

    Abstract: No abstract text available
    Text: DRAM MODULE_ 8 Mega Byte KMM5322000AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322000AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322000AW consists of four CMOS


    OCR Scan     		PDF KMM5322000AW/AWG 2Mx32 1Mx16 KMM5322000AW 42-pin 72-pin

    mega 329

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5322200W/WG Fast Page Mode 2M x32 DRAM SIM M , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5322200W is a 2M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5322200W/WG 1Mx16 322200W 72-pin KMM532220QW KMM5322200W 130ns 150ns mega 329

    KM44C4100AJ

    Abstract: KM44C4100A KMM5324100AV
    Text: DRAM MODULE_ j _ 16 Mega Byte KMM53241OOAV/AVG Fast Page Mode / 4Mx32 DRAM SIMM , 2K Refresh , 5V / Using 16M DRAM with 400 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM53241OOAV is a 4M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM53241OOAV/AVG 4Mx32 KMM53241OOAV KMM5324100AV 24-pin 72-pin KM44C4100AJ KM44C4100A

    KM416C1000AJ

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321OOOAW/AWG Fast Page Mode 1Mx32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321000AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000AW consists of two CMOS


    OCR Scan     		PDF KMM5321OOOAW/AWG 1Mx32 1Mx16 KMM5321000AW 42-pin 72-pin KMM5321000AW-6 KM416C1000AJ