matching with smith chart
Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,
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com/an1852
MAX2320:
MAX2720:
MAX2721:
AN1852,
APP1852,
Appnote1852,
matching with smith chart
AN-1852
chart
AN1852
APP1852
MAX2320
MAX2720
MAX2721
lna 30MHz to
2214
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circle surround 2 IC
Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,
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com/an1851
MAX2320:
MAX2720:
MAX2721:
AN1851,
APP1851,
Appnote1851,
circle surround 2 IC
Using Linvill Techniques
LS12
MAX2320
MAX2720
MAX2721
SS11
app abstract
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APP1851
Abstract: LS12 MAX2320 SS11 s11s
Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,
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MAX2320:
com/an1851
AN1851,
APP1851,
Appnote1851,
APP1851
LS12
MAX2320
SS11
s11s
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RF transistors with s-parameters
Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar
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5091-8350E
5968-1411E
RF transistors with s-parameters
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
transistor s11 s12 s21 s22
Hewlett-Packard transistor microwave
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high power FET transistor s-parameters
Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar
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5091-8350E
5968-1411E
high power FET transistor s-parameters
transistor s11 s12 s21 s22
FET transistors with s-parameters
transistor s parameters noise
2S12
circle of constant Noise
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
bipolar transistor ghz s-parameter
s21a1
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transistor s11 s12 s21 s22
Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar
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5091-8350E
5968-1411E
transistor s11 s12 s21 s22
5091-8350E
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
high power FET transistor s-parameters
s11a1
s-parameter s11 s12 s21
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APP742
Abstract: smith chart smith MAX2320 MAX2338 MAX2358 MAX2387 MAX2388 MAX2472 matching with smith chart
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection
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MAX2472
900MHz
MAX2387:
MAX2388:
MAX2472:
MAX2473:
MAX2640:
MAX2641:
MAX2642:
MAX2644:
APP742
smith chart
smith
MAX2320
MAX2338
MAX2358
MAX2387
MAX2388
matching with smith chart
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MAX2320
Abstract: MAX2338 MAX2358 MAX2472 SIEMENS saw filter Maxim Integrated MAX2640 28 27 app abstract
Text: Maxim > App Notes > Wireless, RF, and Cable Keywords: smith chart, RF, impedance matching, transmission line Jul 22, 2002 APPLICATION NOTE 742 Impedance Matching and the Smith Chart: The Fundamentals Abstract: Tutorial on RF impedance matching using the Smith chart. Examples are shown plotting reflection
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MAX2472
900MHz
MAX2388:
MAX2472:
MAX2473:
MAX2640:
MAX2641:
MAX2642:
MAX2644:
MAX2645:
MAX2320
MAX2338
MAX2358
SIEMENS saw filter
Maxim Integrated MAX2640 28 27
app abstract
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smith chart
Abstract: max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642
Text: WIRELESS, RF, AND CABLE Application Note 742: Mar 23, 2001 Impedance Matching and the Smith Chart: The Fundamentals Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection coefficients, impedances and admittances. A sample matching network is designed at 60 MHz using graphical methods.
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MAX2320:
MAX2338:
MAX2387:
MAX2388:
MAX2640:
MAX2641:
MAX2642:
MAX2644:
MAX2645:
MAX2648:
smith chart
max2640 smith
smith
MAX2320
MAX2338
MAX2387
MAX2388
MAX2640
MAX2641
MAX2642
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ADL5521/23
Abstract: No abstract text available
Text: Preliminary Technical Data Sheet FEATURES 400 MHz to 4000 MHz Low Noise Amplifier ADL5523 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Noise figure of 0.9 dB at 900 MHz Including external input match Gain of 21.5 dB at 900 MHz OIP3 of 35.0 dBm at 900 MHz
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ADL5521
ADL5523
ADL5523
ADL5523ACPZ-R7
ADL5523-EVALZ1
061507-B
PR06829-0-7/08
ADL5521/23
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Untitled
Abstract: No abstract text available
Text: 400 MHz to 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz
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ADL5523
ADL5521
ADL5521
ADL5521ACPZ-R7
ADL5521-EVALZ1
061507-B
PR06828-0-7/08
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BLM21PG600SN1D
Abstract: ATF-50189 ATF50189 RO4350
Text: ATF-50189 2.4 GHz high-linearity second stage LNA/ driver using ATF-50189 Application Note 5106 Introduction EPHEMT biasing Avago Technologies’ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3 LNA Q2
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ATF-50189
ATF-50189
5989-2799EN
AV01-0677EN
BLM21PG600SN1D
ATF50189
RO4350
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matching circuit of atf 52189
Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
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ATF-52189
ATF-52189
ATF-521P8
5989-4040EN
matching circuit of atf 52189
BLM21PG600SN1D
53189
ATF-521P8
ATF-53189
RO4350
depletion mode PHEMT .s2p
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ATF-53189
Abstract: SMA CONN ATF - 53189 AMPLIFIER ATF-521P8 ATF53189 RO4350 53189
Text: 2.0 GHz high-linearity second stage LNA/driver using Avago Technologies ATF-53189 Application Note 5244 Introduction Circuit Description Avago Technologies’ ATF-53189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
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ATF-53189
ATF-53189
ATF-521P8
5989-3846EN
SMA CONN
ATF - 53189 AMPLIFIER
ATF53189
RO4350
53189
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si4432
Abstract: Si443x AN427 mathcad Si433X SI4432-V2
Text: AN427 EZRADIOPRO Si433X & Si443X RX LNA MATCHING 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si433x and Si443x family of RFICs. We desire to simultaneously achieve two goals with the matching network:
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AN427
Si433X
Si443X
Si433x
si4432
AN427
mathcad
SI4432-V2
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AMPSA
Abstract: DS-AMPSA-MTCH-2014.2.5
Text: AWR Connected AMPSA OVERVIEW AWR Connected™ for AMPSA Impedance-Matching Wizard IMW provides a state-of-the-art synthesis solution for impedance-matching networks for/of RF and microwave circuits and devices such as amplifiers, antennas, etc. Integrating
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DS-AMPSA-MTCH-2014
AMPSA
DS-AMPSA-MTCH-2014.2.5
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RO4350B
Abstract: MGA-61563 GRM1555C1H330JZ01E isolator 2 2.1 GHz AN5012 RO4350 0603CS 0604HQ 4350B E4413A
Text: A 2.2-2.9 GHz Low Noise Amplifier Using Avago Technologies’ MGA-61563 Application Note 5237 MGA-61563 is the high performance GaAs MMIC amplifier fabricated with Avago Technologies’ E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563 uses
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MGA-61563
MGA-61563
MGA-6156is
E4419B
E4413A
5989-3285EN
AV02-1428EN
RO4350B
GRM1555C1H330JZ01E
isolator 2 2.1 GHz
AN5012
RO4350
0603CS
0604HQ
4350B
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Rogers 4350B
Abstract: 4350B SKY67100 SKY67100-396LF SKY67101 Rogers 4350B substrate
Text: WHITE PAPER Designing Ultra Low Noise Amplifiers for Infrastructure Receiver Applications By Fikret Altunkilic, Alan Miller, Vivian Tzanakos and Michele Lewis Introduction Amplifiers used in wireless infrastructure receiver applications have the key requirements of low noise, high linearity, and
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SKY67101-396LF,
SKY67100-396LF,
Rogers 4350B
4350B
SKY67100
SKY67100-396LF
SKY67101
Rogers 4350B substrate
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN Low noise figure DESCRIPTION
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BFS25A
OT323
OT323
MBC870
OT323.
R77/03/pp13
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MRC034
Abstract: MRC036 MRC031 BFS25A RF NPN POWER TRANSISTOR 3 GHZ Replacement Handbook MRC053
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN Low noise figure
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BFS25A
OT323
OT323
MBC870
OT323.
R77/03/pp13
MRC034
MRC036
MRC031
BFS25A
RF NPN POWER TRANSISTOR 3 GHZ
Replacement Handbook
MRC053
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cavity resonator
Abstract: two cavity resonator design dielectric resonator oscillator
Text: TM Single Frequency Cavity Resonator Patent Pending DLI's Cavity Resonators set a new standard for high Q resonator performance across a broad spectrum of frequencies. High Q resonators play a critical role in system noise performance, and employing this advantage is
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41ga
Abstract: No abstract text available
Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz Integrated bias control circuit
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ADL5523
ADL5521
ADL5521
ADL5521ACPZ-R71
ADL5521ACPZ-WP1
ADL5521-EVALZ
J-STD-020
J-STD-20
41ga
|
ADL5523
Abstract: ADL5521-EVALZ ADL5521 900MHZ
Text: 400 MHz – 4000 MHz Low Noise Amplifier ADL5521 Preliminary Technical Data FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Including external input match Gain of 20.0 dB at 900 MHz OIP3 of 37.7 dBm at 900 MHz P1dB of 22.0 dBm at 900 MHz
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ADL5521
ADL5523
ADL5521
061507-B
ADL5521ACPZ-R71
ADL5521ACPZ-WP1
ADL5521-EVALZ
J-STD-020
ADL5523
ADL5521-EVALZ
900MHZ
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gummel
Abstract: small signal high frequency bipolar transistor IC sequential DATA BASE 60Ghz gex 96 a TRANSISTOR 30GHZ transistor RBV cbv2 Y parameters of transistors in high frequency
Text: IEEE BCTM 6.1 Im proved E xtraction o f B ase and E m itter R esistan ce from Sm all Signal H igh Frequency A d m itta n ce M easurem ents W.J: Kloosterm an, J.C.J. Paasschens and D.B.M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands
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OCR Scan
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PDF
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ED-31
2048/JessiT28
30GHz,
60Ghz
gummel
small signal high frequency bipolar transistor
IC sequential DATA BASE
gex 96 a
TRANSISTOR 30GHZ
transistor RBV
cbv2
Y parameters of transistors in high frequency
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