Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK919S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E B L L ・Low loss at on state Typ 1dB@1GHz D ・With built-in bias diode 3 H G A 2 1 Q P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS
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KTK919S
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KTK919S
Abstract: ktk919 S21 SOT23
Text: SEMICONDUCTOR KTK919S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E B L L DIM A With built-in bias diode H D 1 P K 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L
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KTK919S
860MHz
KTK919S
ktk919
S21 SOT23
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BF1107
Abstract: BF1107W
Text: BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions.
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BF1107
BF1107
BF1107W
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transistor truth table
Abstract: BUK223-50Y
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK223-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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BUK223-50Y
transistor truth table
BUK223-50Y
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PIP3208-A
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor TOPFET high side switch DESCRIPTION PIP3208-A QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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PIP3208-A
PIP3208-A
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transistor truth table
Abstract: BUK219-50Y
Text: Philips Semiconductors Product Specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK219-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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BUK219-50Y
transistor truth table
BUK219-50Y
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Untitled
Abstract: No abstract text available
Text: GTL2002 2-bit bidirectional low voltage translator Rev. 05 — 13 August 2007 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation
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GTL2002
GTL2002
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PIP3206-R
Abstract: SC18 SMD 6v Transistor
Text: Philips Semiconductors Preliminary specification TOPFET high side switch SMD version DESCRIPTION PIP3206-R QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
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PIP3206-R
PIP3206-R
SC18
SMD 6v Transistor
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BUK216-50YT
Abstract: SC18 TOPFET high side switch 5 PIN
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version BUK216-50YT QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
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BUK216-50YT
BUK216-50YT
SC18
TOPFET high side switch 5 PIN
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switch smd
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION BUK217-50YT QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
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BUK217-50YT
switch smd
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SMD transistor Mo
Abstract: PIP3209-R SC18 TOPFET
Text: Philips Semiconductors Product Specification TOPFET high side switch DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. PiP3209-R QUICK REFERENCE DATA SYMBOL PARAMETER
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PiP3209-R
SMD transistor Mo
PIP3209-R
SC18
TOPFET
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BUK217-50YT
Abstract: SC18
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION BUK217-50YT QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
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BUK217-50YT
BUK217-50YT
SC18
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BUK209-50Y
Abstract: buk209 BUK214-50Y SC18
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK209-50Y BUK214-50Y QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount
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BUK209-50Y
BUK214-50Y
BUK209-50Y
buk209
BUK214-50Y
SC18
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buk220
Abstract: BUK219-50Y BUK220-50Y SC18
Text: Philips Semiconductors Product Specification TOPFET high side switch SMD version of BUK219-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK220-50Y QUICK REFERENCE DATA
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BUK219-50Y
BUK220-50Y
buk220
BUK219-50Y
BUK220-50Y
SC18
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BUK209-50Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch DESCRIPTION BUK209-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL PARAMETER IL Nominal load current ISO
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BUK209-50Y
BUK209-50Y
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ot 112
Abstract: TOPFET high side switch BUK208-50Y BUK213-50Y SC18
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK208-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK213-50Y QUICK REFERENCE DATA
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BUK208-50Y
BUK213-50Y
ot 112
TOPFET high side switch
BUK208-50Y
BUK213-50Y
SC18
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PHILIPS MOSFET MARKING
Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET
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M3D088
BF1107
SCA59
115102/00/01/pp8
PHILIPS MOSFET MARKING
passive loopthrough
n channel depletion MOSFET
mosfet 5130
Q 817
mosfet K 2865
115102
4466 8 pin mosfet pin voltage
marking code 10 sot23
BF1107
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BUK426-100B
Abstract: No abstract text available
Text: N AflER P H I L I P S / D I S C R E T E bbSBTBl 5SE D 002 02 45 . =1 PowerMOS transistor BUK426-100A BUK426-100B T -S 9 -// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK426-100A
BUK426-100B
BUK426
-100A
-100B
FuJ-12
BUK426-100B
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Untitled
Abstract: No abstract text available
Text: n f p rrn n n U UP v o l t a g e r e g u l a t o r w it h Liu EXTERNAL POWER TRANSISTOR R N 5 R G S E R IE S OUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu racy and lowest supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer
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OT-23-5
2SA1213
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philips diagram fr 310
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured
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BUK200-50Y
BUK200-50Y
philips diagram fr 310
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK203-50Y
BUK203-50Y
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GZ25
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y _ _ _ _ For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch
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BUK201-50Y
BUK201-5QY
GZ25
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K2025
Abstract: k202 uk202
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-50X
100\is
K2025
k202
uk202
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK203-50X
BUK203-5QX
BUK203-50X
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