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    CIG TRANSISTOR SOT Search Results

    CIG TRANSISTOR SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    CIG TRANSISTOR SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK919S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E B L L ・Low loss at on state Typ 1dB@1GHz D ・With built-in bias diode 3 H G A 2 1 Q P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS


    Original     		PDF KTK919S

    KTK919S

    Abstract: ktk919 S21 SOT23
    Text: SEMICONDUCTOR KTK919S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E B L L DIM A With built-in bias diode H D 1 P K 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L


    Original     		PDF KTK919S 860MHz KTK919S ktk919 S21 SOT23

    BF1107

    Abstract: BF1107W
    Text: BF1107 N-channel single gate MOSFET Rev. 04 — 9 January 2007 Product data sheet 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions.


    Original     		PDF BF1107 BF1107 BF1107W

    transistor truth table

    Abstract: BUK223-50Y
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK223-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL


    Original     		PDF BUK223-50Y transistor truth table BUK223-50Y

    PIP3208-A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor TOPFET high side switch DESCRIPTION PIP3208-A QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL


    Original     		PDF PIP3208-A PIP3208-A

    transistor truth table

    Abstract: BUK219-50Y
    Text: Philips Semiconductors Product Specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK219-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL


    Original     		PDF BUK219-50Y transistor truth table BUK219-50Y

    Untitled

    Abstract: No abstract text available
    Text: GTL2002 2-bit bidirectional low voltage translator Rev. 05 — 13 August 2007 Product data sheet 1. General description The Gunning Transceiver Logic - Transceiver Voltage Clamps GTL-TVC provide high-speed voltage translation with low ON-state resistance and minimal propagation


    Original     		PDF GTL2002 GTL2002

    PIP3206-R

    Abstract: SC18 SMD 6v Transistor
    Text: Philips Semiconductors Preliminary specification TOPFET high side switch SMD version DESCRIPTION PIP3206-R QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.


    Original     		PDF PIP3206-R PIP3206-R SC18 SMD 6v Transistor

    BUK216-50YT

    Abstract: SC18 TOPFET high side switch 5 PIN
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version BUK216-50YT QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.


    Original     		PDF BUK216-50YT BUK216-50YT SC18 TOPFET high side switch 5 PIN

    switch smd

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION BUK217-50YT QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.


    Original     		PDF BUK217-50YT switch smd

    SMD transistor Mo

    Abstract: PIP3209-R SC18 TOPFET
    Text: Philips Semiconductors Product Specification TOPFET high side switch DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. PiP3209-R QUICK REFERENCE DATA SYMBOL PARAMETER


    Original     		PDF PiP3209-R SMD transistor Mo PIP3209-R SC18 TOPFET

    BUK217-50YT

    Abstract: SC18
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version DESCRIPTION BUK217-50YT QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.


    Original     		PDF BUK217-50YT BUK217-50YT SC18

    BUK209-50Y

    Abstract: buk209 BUK214-50Y SC18
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK209-50Y BUK214-50Y QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount


    Original     		PDF BUK209-50Y BUK214-50Y BUK209-50Y buk209 BUK214-50Y SC18

    buk220

    Abstract: BUK219-50Y BUK220-50Y SC18
    Text: Philips Semiconductors Product Specification TOPFET high side switch SMD version of BUK219-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK220-50Y QUICK REFERENCE DATA


    Original     		PDF BUK219-50Y BUK220-50Y buk220 BUK219-50Y BUK220-50Y SC18

    BUK209-50Y

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TOPFET high side switch DESCRIPTION BUK209-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL PARAMETER IL Nominal load current ISO


    Original     		PDF BUK209-50Y BUK209-50Y

    ot 112

    Abstract: TOPFET high side switch BUK208-50Y BUK213-50Y SC18
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK208-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK213-50Y QUICK REFERENCE DATA


    Original     		PDF BUK208-50Y BUK213-50Y ot 112 TOPFET high side switch BUK208-50Y BUK213-50Y SC18

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    BUK426-100B

    Abstract: No abstract text available
    Text: N AflER P H I L I P S / D I S C R E T E bbSBTBl 5SE D 002 02 45 . =1 PowerMOS transistor BUK426-100A BUK426-100B T -S 9 -// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK426-100A BUK426-100B BUK426 -100A -100B FuJ-12 BUK426-100B

    Untitled

    Abstract: No abstract text available
    Text: n f p rrn n n U UP v o l t a g e r e g u l a t o r w it h Liu EXTERNAL POWER TRANSISTOR R N 5 R G S E R IE S OUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu­ racy and lowest supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer­


    OCR Scan     		PDF OT-23-5 2SA1213

    philips diagram fr 310

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BUK200-50Y philips diagram fr 310

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50Y BUK203-50Y

    GZ25

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y _ _ _ _ For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch


    OCR Scan     		PDF BUK201-50Y BUK201-5QY GZ25

    K2025

    Abstract: k202 uk202
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50X 100\is K2025 k202 uk202

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50X BUK203-5QX BUK203-50X