4067B
Abstract: 4097B hcc4067b SS1G ci 4067
Text: s G S - T H O M S O N 07C D I 7 T 2 cia37 0 0 1 4 3 3 ^ 4 I m rrR A TFn '• IN Itb K A Ib U : . h d c /h c f «¡ o tb 1 HCCfHCF 4097B C IR C U IT S - 4IC 08853 ' T-SI ' I I ANALOG MULTIPLEXERS/DEMULTIPLEXERS: 4067B SIN G LE 16-CHANNEL 4097B D IF F E R E N T IA L 8-CHANNEL
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4067B
4097B
4067B
16-CHANNEL
4097B
4067B,
4097B.
hcc4067b
SS1G
ci 4067
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SC250D3
Abstract: 2sc2501
Text: MOTOROLA SC ÍD I OD ES /O PTO} 77 Öl D e | b3b72SS □ □ 7 cia37 7 J V ' à S - ' / S ' SC 250 S C 2 5 0 3 SC 251 T riacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,
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b3b72SS
MT20-
SC250D3
2sc2501
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SGS15DB070D
Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
Text: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.
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SGS15DB080D
15KVA
SGS15DB070D
sc0039
HALF BRIDGE NPN DARLINGTON POWER MODULE
sgsI5
Diode D7E
sgs15d
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diode byx
Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
Text: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V
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1/4-28UNF
CB-34)
diode byx
BYX67-1000
DIODE REDRESSEMENT
BYX 13 400 R
byx 21
diode byx 67-1000
diode byx 32
BYX/400
BYX67 400
BYX67-600
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Thomson-CSF semiconductor
Abstract: diodes B2V BZV36 MARKING BUX BZV36A-B BZV32 BZV33B
Text: S^C D 1 s G S-THOMSON O 7^21337 aaOSSbE M THOMSON-CSF * BZV 32,A ,B — BZV 36,A ,B DIVISION SEMICONDUCTEURS V O L TA G E REFERENCE D IO D ES TE M P E R A T U R E C O M P E N S A TE D DIODES D E RÉFÉRENCE D E TENSION (COMPENSÉES EN TEMPÉRA TURE) EPI Z
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7121E37
BZV32
BZV36,
CB-102)
Thomson-CSF semiconductor
diodes B2V
BZV36
MARKING BUX
BZV36A-B
BZV33B
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4072B
Abstract: 4071B-QUAD 4071B 4075B 4072 08 gates TL AND Gates
Text: S G S-THOHSON D7C 1 | 7121237 GDMSfaH 3 | C O S /M O S a aV INTEGRATED CIRCUITS ' 7929225 , HCC/HCF 4071B 4072b h c c /h c f l J y ' HCC/HCF 40758 _ 4LC 08878 U T - V 3 - 2 ./ S G S SEMICONDUCTOR CORP rncLiMINARY DATA 4071B *•QUAD 2-INPUT OR GATE 4072B - QUAD 4-INPUT OR GATE
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4071b
4072b
4075b
4071B-QUAD
4075B
4071B/4072B
33TOV
4072 08 gates
TL AND Gates
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diode byx
Abstract: PAS 1066 byx 21
Text: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
diode byx
PAS 1066
byx 21
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