Sharp Semiconductor Lasers
Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical
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MIL-STD-883
SMA04033
Sharp Semiconductor Lasers
AU4A
transistor QB
tensile-strength
thermopile array
BREAK FAILURE INDICATOR APPLICATIONS LIST
relay failure analysis
CRACK DETECTION PATTERNS
gold wire bound failures due to ultrasonic cleaning
2n2222 micro electronics
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transformador
Abstract: potenciometro ajustable 2k TTH300 POTENCIOMETRO 2k NORMAS ATEX PARA CONTROL DE PROCESOS Carimbo SENSOR DE TEMPERATURA transformador electrico ABB12A EC certificate PTB ATEX 1144 X
Text: CI/TTF350-X1 Inbetriebnahmeanleitung Temperatur-Messumformer für Feldmontage TTF350 Commissioning Instructions Field-mounted temperature transmitters TTF350 Notice de mise en service Convertisseurs de mesure de température pour montage local TTF350 Instrucciones para la puesta en
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CI/TTF350-X1
TTF350
transformador
potenciometro ajustable 2k
TTH300
POTENCIOMETRO 2k
NORMAS ATEX PARA CONTROL DE PROCESOS
Carimbo
SENSOR DE TEMPERATURA
transformador electrico
ABB12A
EC certificate PTB ATEX 1144 X
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Untitled
Abstract: No abstract text available
Text: ZXM C4A16DN8 COM PLEM ENTARY 40V ENHANCEM ENT M ODE M OSFET SUM M ARY N-Channel = V BR DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V (BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench M OSFETs from Zetex utilises a unique structure that com bines the benefits
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C4A16DN8
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70V18
Abstract: A12L A13L A15L A15R IDT70V18 IDT70V18L ci sem 2004
Text: HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM IDT70V18L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.)
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IDT70V18L
15/20ns
440mW
IDT70V18
70V18
A12L
A13L
A15L
A15R
IDT70V18L
ci sem 2004
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Untitled
Abstract: No abstract text available
Text: ZVP4525G 250V P-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancem ent m ode P-channel M OSFET provides users w ith a com petitive specification offering efficient pow er handling capability, high
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ZVP4525G
-250V;
-265mA
OT23-6
OT223
ZVN4525G
OT223
di250
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DPRAM
Abstract: AN2146 AN1834 CY7C028V DSP56300 MSC8101 SC140 pgpl5
Text: Freescale Semiconductor Application Note AN2146 Rev. 3, 1/2005 Interfacing the MSC8101 UPM to an External Dual-Port SRAM By Iantha Scheiwe The MSC8101 is a powerful DSP that integrates the StarCore SC140 DSP core, a communications processor module CPM
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AN2146
MSC8101
SC140
CY7C028V
DPRAM
AN2146
AN1834
DSP56300
pgpl5
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70V37
Abstract: A14L IDT70V37 IDT70V37L
Text: HIGH-SPEED 3.3V 32K x 18 DUAL-PORT STATIC RAM IDT70V37L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.)
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IDT70V37L
15/20ns
440mW
IDT70V37
200mV
70V37
A14L
IDT70V37L
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 18 DUAL-PORT STATIC RAM IDT70V37L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.) Low-power operation
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IDT70V37L
15/20ns
IDT70V37L
440mW
IDT70V37
200mV
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L1220
Abstract: 5L25 A12L A13L IDT70T15
Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access Commercial:20/25ns max. Industrial: 25ns (max.) Low-power operation IDT70T16/5L
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16/8K
20/25ns
IDT70T16/5L
200mW
IDT70T16/5
70T16
70T15
L1220
5L25
A12L
A13L
IDT70T15
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J6815
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 16/8K X 9 DUAL-PORT STATIC RAM IDT70V16/5S/L Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:15/20/25ns max. – Industrial: 20ns (max.) Low-power operation
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16/8K
IDT70V16/5S/L
15/20/25ns
IDT70V16/5S
430mW
IDT70V16/5L
415mW
IDT70V16/5
J6815
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation
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25/35/55ns
IDT70V07S
300mW
IDT70V07L
IDT70V07S/L
IDT70V07
200mV
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A12L
Abstract: A13L A14L IDT70V07 IDT70V07L IDT70V07S
Text: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation
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25/35/55ns
IDT70V07S
300mW
IDT70V07L
IDT70V07S/L
IDT70V07
200mV
A12L
A13L
A14L
IDT70V07L
IDT70V07S
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5L25
Abstract: A12L A13L IDT70T15
Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation
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16/8K
IDT70T16/5L
20/25ns
200mW
IDT70T16/5
70T16
70T15
5L25
A12L
A13L
IDT70T15
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J6815
Abstract: A12L A13L IDT70V15
Text: HIGH-SPEED 3.3V 16/8K X 9 DUAL-PORT STATIC RAM IDT70V16/5S/L Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:15/20/25ns max. – Industrial: 20ns (max.) Low-power operation
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16/8K
IDT70V16/5S/L
15/20/25ns
IDT70V16/5S
430mW
IDT70V16/5L
415mW
IDT70V16/5
J6815
A12L
A13L
IDT70V15
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A14L
Abstract: IDT7027 IDT7027L IDT7027S
Text: HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/25ns (max.) Low-power operation
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15/20/25/35/55ns
20/25ns
IDT7027S
750mW
IDT7027L
IDT7027S/L
IDT7027
25/35/55ns
A14L
IDT7027L
IDT7027S
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7L Marking
Abstract: c 3198
Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/55ns (max.) – Military: 25/35/55ns (max.)
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IDT7008S/L
15/20/25/35/55ns
20/55ns
25/35/55ns
IDT7008S
750mW
IDT7008L
IDT7008
7L Marking
c 3198
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A 3198
Abstract: A15L A15R IDT7008 IDT7008L IDT7008S 7008S
Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/55ns (max.) – Military: 25/35/55ns (max.)
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15/20/25/35/55ns
20/55ns
25/35/55ns
IDT7008S
750mW
IDT7008L
IDT7008S/L
IDT7008
A 3198
A15L
A15R
IDT7008L
IDT7008S
7008S
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28P2W-C
Abstract: M5M5256DFP M5M5256DVP IC SEM 2004
Text: RENESAS LSIs M5M5256DFP,VP-55LL,-70LL,-70LLI, -55XL,-70XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of
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M5M5256DFP
VP-55LL
-70LL
-70LLI,
-55XL
-70XL
262144-BIT
32768-WORD
144-bit
28P2W-C
M5M5256DVP
IC SEM 2004
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induction cooker schematic diagram
Abstract: schematic diagram induction cooker gas cooker circuit ignitor 4701-306 foundry metals quality MANUALS transistor 1411 tester diagram induction cooker yamaha amplifier a 550 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR GAS COOKER IGNITOR
Text: '04 Hand Book for QUALITY/RELIABILITY Issue Date: May 11, 2004 INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network information revolution, the Oki semiconductor business was launched as a new company, Silicon Solution
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
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10/12/15ns
IDT70T653M
IDT70T653M
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time
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72-Bit
721000GS-60/-70
74ABT244
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40102B
Abstract: 40103B
Text: S G S-THOMSON D7C D I 7 ^ 2 3 7 DOlSObS 0 I C u s / m u s n ir m if ° ^ u IK u U 11o - • K K f S > ’ aj 7929225 S G S SE MI C O N D U C T OR C O R P 8-STAGE PR ESET T A BLE SYNCHRONOUS DOWN COUNTERS 40102B 2-DECADE BCD TYPE 40103B 8-BIT BIN A R Y TYPE
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40102B
40103B
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Untitled
Abstract: No abstract text available
Text: Military Program Overview Corporate Philosophy MIL-STD-883 Compliance Lattice Sem iconductor C orporation LSC is com m itted to leadership in device perform ance and quality. O ur fam ily of m ilitary ispLSt, pLSI and G AL devices is a reflection of this philosophy. LSC m anufactures all devices under
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IL-l-38535
IL-l-45208.
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS ^ 4.2M AX. . —I High Current Capability Iß = 150mA (Max.) High DC Current Gain hjPE = 70~700
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2SC2458Â
150mA
2SA1048L.
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