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    CI EEPROM 2864 Search Results

    CI EEPROM 2864 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    MC28F008-10 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    X28C010FI-15 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    ER2051HR-006 Rochester Electronics LLC ER2051 - EEPROM Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy

    CI EEPROM 2864 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2864 eeprom

    Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
    Text: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1225Y 28-pin 24-Pin 720URE DS1225Y-150 DS1225Y-150+ DS1225Y-150IND DS1225Y-150IND+ DS1225Y-170 DS1225Y-170+ 2864 eeprom DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT

    DDR3-1066

    Abstract: DDR3-1333 X1620
    Text: 240pin DDR3 SDRAM Unbuffered DIMMs DDR3 SDRAM Unbuffered DIMMs Based on 2Gb M version HMT351U6MFR8C HMT351U7MFR8C * Contents are subject to change without prior notice. Rev. 0.3 / Jan 2009 1 HMT351U6MFR8C HMT351U7MFR8C Revision History Revision No. History


    Original     		PDF 240pin HMT351U6MFR8C HMT351U7MFR8C 512Mx72 DDR3-1066 DDR3-1333 X1620

    2864 eeprom

    Abstract: 2764 eprom DS1225Y Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN 2864 eeprom 2764 eprom Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram

    DS1225Y

    Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864

    DS1225Y-200

    Abstract: DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y-200 DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225

    DS1225Y

    Abstract: DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 150ns 170ns 200ns DS1225Y DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864

    2764 eprom PINOUT

    Abstract: dallas ds1225y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full +10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y 28-PIN 28-PIN 2764 eprom PINOUT dallas ds1225y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200

    EEPROM 2864

    Abstract: DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND mdt28 EEPROM 2864 CMOS 2864 eeprom
    Text: 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		PDF DS1225Y 28-pin MDT28 EEPROM 2864 DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND EEPROM 2864 CMOS 2864 eeprom

    DS1225Y

    Abstract: No abstract text available
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1225Y 28-pin 24-Pin 720-mil A0-A12 150ns 170ns

    DS1225AD-70

    Abstract: DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200
    Text: DS1225AB/AD 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns DS1225AD-70 DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200

    EEPROM 2864

    Abstract: 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM DS1225Y EEPROM 2864 CMOS DS1225
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y EEPROM 2864 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM EEPROM 2864 CMOS DS1225

    2764 eprom

    Abstract: No abstract text available
    Text: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) 27may MDT28 DS1225AB/AD 2764 eprom

    DS1220AB-85

    Abstract: DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1220AB-85 DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225

    Untitled

    Abstract: No abstract text available
    Text: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) MDT28

    DS1225Y

    Abstract: DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		PDF DS1225Y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200

    DS1225

    Abstract: DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01 EEPROM 2864 DS1225A
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01 EEPROM 2864 DS1225A

    DS1225AD-200

    Abstract: DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1225AD-200 DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01

    EEPROM 2864 CMOS

    Abstract: No abstract text available
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns EEPROM 2864 CMOS

    KM2864A-25

    Abstract: KM2864A-30 KM2864A KM2864A-20 KM2864AH KM2864AH-20 KM2864AH-25
    Text: KM2864A/KM2864AH NMOS EEPROM 8 K x 8 Bit EEPROM with Latches and Auto-Write FEATURES GENERAL DESCRIPTION • Simple Byte Write — Single TTL Level W rite Signal — Latched Address and Data — Autom atic Internal Erase-be fore-Wrf te — Automatic W rite Timing


    OCR Scan     		PDF KM2864A/KM2864AH KM2864A KM2864AH 200ns 120mAâ KM2864A/AH KM2864A-25 KM2864A-30 KM2864A KM2864A-20 KM2864AH KM2864AH-20 KM2864AH-25

    2864 EEPROM 28 PINS

    Abstract: EEPROM 2864 Ram 2864 SCSR 118 2864 eeprom mc68hc11a EEPROM 27128 5Bp cms 8D0C D803
    Text: Order this document by AN1010/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1010 MC68HC11 EEPROM Programming from a Personal Computer This application note describes a simple and reliable method of programming either the MC68HC11's internal EEPROM, or EEPROM connected to the M C U's external


    OCR Scan     		PDF AN1010/D AN1010 MC68HC11 RS232 A23405 2864 EEPROM 28 PINS EEPROM 2864 Ram 2864 SCSR 118 2864 eeprom mc68hc11a EEPROM 27128 5Bp cms 8D0C D803

    DS1225Y

    Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
    Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc


    OCR Scan     		PDF DS1225Y 28-pin 228-PIN 28-PIN DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY

    IC 2864 eeprom

    Abstract: dallas ds 1225y dallas ds1225y ic 2864 eprom DS1225Y
    Text: DS1225Y DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V c c NC 1 •-J VCC ro 1 A7 | 3 26 | NC A12 • Directly replaces 8K x 8 volatile static RAM or EEPROM 28 1 • I • Data is automatically protected during power loss


    OCR Scan     		PDF DS1225Y 28-pin Vcc11. DS1225Y IC 2864 eeprom dallas ds 1225y dallas ds1225y ic 2864 eprom

    xicor 28C64

    Abstract: X28C64 28C64 EEPROM A30A eeprom 28c65 MBM28C65-35 MSM28C64A-20 X28C64-20 X28C64-25 X28C64-35
    Text: - 2 X A m ¡âÆEffl £ tt « CC « TAAC •ax ns) TCAC max (ns) TOH «ax (ns) TOE max (ns) TOD max (ns) VDD (V) 8 C 6 4 U (i*A) VIL max (V) m -n /m ~h A I DD/STANDBY VIH tin (V) Ci max (pF) V O L / I VOL max (V/mA) n i VOH/IVOH min (V/mA) Co tax (pF) 80


    OCR Scan     		PDF MBM28C65-35 MSH28C84A-15 MSM28C64A-20 X28C64 X28C64-20 X28C64-25 XI-70 20/fl. UPD28C64C-20 uPD28C64C-25 xicor 28C64 28C64 EEPROM A30A eeprom 28c65 X28C64-35

    am2664be

    Abstract: rvb ah
    Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write


    OCR Scan     		PDF Am2864BE 32-byte 10-year Am2664BE 536-bit WF025172 rvb ah