LUCENT 277
Abstract: ci 7495 intel FPGA CI LM 555
Text: Product Brief November 1999 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Features • Abundant hierarchical routing resources based on routing two data nibbles and two control lines per set provide for faster place and route implementations and less routing delay.
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PN00-012FPGA
PN99-053FPGA)
LUCENT 277
ci 7495
intel FPGA
CI LM 555
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125OC
Abstract: 555H
Text: PMC PRELIMINARY Pm29LV004 4 Megabit 512K X 8 3.0 Volt-Only CMOS Flash Memory FEATURES Single Power Supply Operation - Standard voltage range: 2.7 V - 3.6 V - Regulated voltage range: 3.0 V - 3.6 V Hardware Data Protection High Performance Read - 70 ns access time at regulated voltage range
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Pm29LV004
32-Pin
125OC
555H
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Pm29F002T-12PC
Abstract: Pm29F002T-12JC 125OC 555H Programmable Microelectronics
Text: PMC PRELIMINARY Pm29F002 2 Megabit 256K X 8 5 Volt-Only CMOS Flash Memory FEATURES Data# Polling and Toggle Bit Features Single Power Supply Operation - 5.0 V ± 10% Read/Program/Erase Low Power Consumption - Typical 12 mA active read current - Typical 0.1 µA CMOS standby current
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Pm29F002
32-pin
Pm29F002
Pm29F002T-12PC
Pm29F002T-12JC
125OC
555H
Programmable Microelectronics
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125OC
Abstract: 555H
Text: PMC PRELIMINARY Pm29F004 4 Megabit 512K X 8 5 Volt-Only CMOS Flash Memory FEATURES Data# Polling and Toggle Bit Features Single Power Supply Operation - 5.0 V ± 10% Read/Program/Erase Low Power Consumption - Typical 15 mA active read current - Typical 30 mA program/erase current
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Pm29F004
Pm29F004
32-Pin
125OC
555H
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SST29SF040
Abstract: SST29VF040-70-4C-WHE SST29VF040 555H
Text: 4 Mbit x8 Small-Sector Flash SST29SF040 / SST29VF040 SST29SF/VF0404Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 512K x8 • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST29SF040 – 2.7-3.6V for SST29VF040
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SST29SF040
SST29VF040
SST29SF/VF0404Mb
SST29SF040
S71160-10-000
SST29VF040-70-4C-WHE
SST29VF040
555H
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MEM2009
Abstract: 32-PLCC SST29SF040-55-4C-NHE SST29SF020 SST29SF040 SST29VF020 SST29VF040 A1743 SST29SF020-55-4I-WHE
Text: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations
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SST29SF020
SST29SF040
SST29VF020
SST29VF040
SST29SF/VF020
0402Mb
SST29SF020/040
SST29VF020/040
MEM2009
32-PLCC
SST29SF040-55-4C-NHE
SST29SF040
SST29VF040
A1743
SST29SF020-55-4I-WHE
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pulse injector tester
Abstract: SST29SF020-55-4I-WHE s7116 SST29SF020 SST29SF040 SST29VF020 SST29VF040 sst29sf040-55-4c-whe 2T92 cmos 555 14 pin surface mount
Text: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations
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SST29SF020
SST29SF040
SST29VF020
SST29VF040
SST29SF/VF020
0402Mb
SST29SF020/040
SST29VF020/040
pulse injector tester
SST29SF020-55-4I-WHE
s7116
SST29SF040
SST29VF040
sst29sf040-55-4c-whe
2T92
cmos 555 14 pin surface mount
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SST29SF020
Abstract: SST29SF040 SST29VF020 SST29VF040
Text: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations
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SST29SF020
SST29SF040
SST29VF020
SST29VF040
SST29SF/VF020
0402Mb
SST29SF020/040
SST29VF020/040
SST29SF040
SST29VF040
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VF01
Abstract: No abstract text available
Text: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations
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SST29SF020
SST29SF040
SST29VF020
SST29VF040
SST29SF/VF020
0402Mb
SST29SF020/040
SST29VF020/040
SST29SF020/040
VF01
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GLS29VF040
Abstract: GLS29VF040-70-4I-NH GLS29VF040-70-4C-NHE GLS29SF040554CNHE GLS29VF040-70-4I-WH GLS29VF040704CWHE GLS29SF040-55-4C-WHE gls29vf040-70-4i-nhe GLS29SF040-55-4C-NHE GLS29VF020-70-4C-NHE
Text: 2 Mbit / 4 Mbit x8 Small-Sector Flash GLS29SF020 / GLS29SF040 GLS29VF020 / GLS29VF040 Data Sheet GLS29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations
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GLS29SF020
GLS29SF040
GLS29VF020
GLS29VF040
GLS29SF/VF020
0402Mb
GLS29SF020/040
GLS29VF020/040
GLS29VF040
GLS29VF040-70-4I-NH
GLS29VF040-70-4C-NHE
GLS29SF040554CNHE
GLS29VF040-70-4I-WH
GLS29VF040704CWHE
GLS29SF040-55-4C-WHE
gls29vf040-70-4i-nhe
GLS29SF040-55-4C-NHE
GLS29VF020-70-4C-NHE
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555H
Abstract: SST34HF162C SST34HF164C
Text: 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory SST34HF162C / SST34HF164C SST34HF162C16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory EOL Data Sheet FEATURES: • Flash Organization: 1M x16 – 16 Mbit: 12 Mbit + 4 Mbit • Concurrent Operation – Read from or Write to SRAM while
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SST34HF162C
SST34HF164C
SST34HF162C16Mb
S71269
SST34HF1641J
S71336
S71269-02-EOL
555H
SST34HF164C
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SST39VF3201B
Abstract: SST39VF3202B 555H SST39VF3202B-70-4I-EKE SST39VF3201B-70-4I-EKE CL1384
Text: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 2M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39VF3201B
SST39VF3202B
SST39VF640xB2
SST39VF3201B
48-tfbga-B3K-6x8-450mic-4
48-ball
S71384-01-000
SST39VF3202B
555H
SST39VF3202B-70-4I-EKE
SST39VF3201B-70-4I-EKE
CL1384
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Untitled
Abstract: No abstract text available
Text: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 2M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39VF3201B
SST39VF3202B
SST39VF640xB2
SST39VF3201B
48-tfbga-B3K-6x8-450mic-4
48-ball
S71384-01-000
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SST39VF6401B-70-4C-EKE
Abstract: SST39VF6401B 555H SST39VF6402B SST39VF640xB
Text: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39VF6401B
SST39VF6402B
SST39VF640xB2
SST39VF6401B
48-tfbga-B1K-8x10-450mic-4
48-BALL
S71288-02-000
SST39VF6401B-70-4C-EKE
555H
SST39VF6402B
SST39VF640xB
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BTS555P
Abstract: TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch
Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection
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O-218AB/5
BTS555P
Q67060-tbd-tbd
E3146
E3146
Q67060-tbd-tbd
023SbOS
TO218AB package
SIEMENS 3 TB 40 12 - 0A
TO-218AB Package
TO-218AB
siemens 12V small relays
SIEMENS 3 TB 40 10 - 0A
Smart Highside High Current Power Switch
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Untitled
Abstract: No abstract text available
Text: ñ EBSbOS SIEMENS GDTSmS GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump
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fl235b05
A235bD5
023SbDS
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SIEMENS 3 TB 40 12 - 0A
Abstract: BTS555P BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A
Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection
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O-218AB/5
BTS555P
Q67060-tbd-tbd
O-218AB/5
E3146
BTS555P
E3146
023SbOS
SIEMENS 3 TB 40 12 - 0A
BTS555
siemens profet
siemens 12V small relays
BTS current sense siemens
SIEMENS 3 TB 40 10 - 0A
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BTS555P
Abstract: TO218AB package transistor D 659
Text: SIEMENS PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features Product Summary • • • • • • • • • • • • Overvoltage protection Vbb AZ Operating voltage Vbb(on) On-state resistance Ro n Load current (ISO)
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O-218AB/5
BTS555P
Q67060-tbd-tbd
O-218AB/5
E3146
BTS555P
TO218AB package
transistor D 659
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Untitled
Abstract: No abstract text available
Text: XICOR INC S E E J> T T 4 1 7 4 3 0 0 0 3 0 4 b Ö6T M X I C Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: tAA = 55 ns NO! Batteries!! AUTOSTORE™ NOVRAM — Automatically Stores RAM data to E2PROM upon Power-fail Detection
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XM20C64S
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Am29LV002T
Abstract: No abstract text available
Text: A D V A N C E I N F O R M A T IO N AMDZ1 Am29LV002 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Algorithms ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write
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Am29LV002
Am29LV002T
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CEC-19
Abstract: X20C16 XM20C128S
Text: J & Advance Inform ation XM20C128S 128K G B E 16K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: T a a = 55ns NO! Batteries!! Low Power CMOS AUTOSTORE™ NOVRAM — Automatically Stores RAM Data to E2PROM upon Power-fail Detection Open Drain AUTOSTORE Output Pin
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XM20C128S
XM20C128S
7777/7A
/77//7A
CEC-19
X20C16
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MPC1555G2
Abstract: 556 timer astable multivibrator monostable multivibrator using ic 555 PC1555
Text: DATA SHEET MOS INTEGRATED CIRCUIT Bipolar Analog Integrated Circuit NEC liPC1555 TIMER CIRCUIT The ¿iPC1555 is a powerful integrated circuit. Adding a few external parts to it can turn it into various types of timing signal generators, such as monostable and astable multivibrators. It has trigger, threshold, and control pins.
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uPC1555
MPC1555G2
556 timer astable multivibrator
monostable multivibrator using ic 555
PC1555
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M29F512B
Abstract: PLCC32 TSOP32 G13-14 G1314
Text: M29F512B 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8ps per Byte typical ■ PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm
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M29F512B
TSOP32
PLCC32
PLCC32
7T2T537
013mb3
M29F512B
TSOP32
G13-14
G1314
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HDMP-2501
Abstract: hdmp2501
Text: mL'KM P A C K A R D W fip l H E W L E T T High Speed Silicon Bipolar 622 Mb/s Serial Data and Clock Recovery Circuit Technical Data HDMP-2501 Features • Single Chip Clock Extraction and Data Retiming • Designed for 622 Mb/s Applications • Easy to Apply, Cost
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HDMP-2501
223-l
MILSTD-883,
HDMP-2501
hdmp2501
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