JIS K 5400 8.3
Abstract: Yokogawa Transducer
Text: Product Data Sheet November 2014 00813-0100-4026, Rev KA Rosemount 5400 Series Superior Performance Two-Wire Non-Contacting Radar Level Transmitter Accurate and reliable, direct level measurement, virtually unaffected by process conditions Best performance and uptime provided by dual
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rosemount 1144
Abstract: Yokogawa Transducer
Text: Reference Manual 00809-0100-4026, Rev HA November 2014 Rosemount 5400 Series Superior Performance Two-Wire Non-Contacting Radar Level Transmitter Reference Manual 00809-0100-4026, Rev HA November 2014 Rosemount 5400 Series Read this manual before working with the product. For personal and system safety, and for
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LMM 2057
Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
Text: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J
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O3659
O3666
O3678
LMM 2057
TLC 7555
MBI 5066
samxon GR
chn 809
LM 805 CV
yx 805 3054
CHN 747
CHMC 46
CHN 932
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4026B
Abstract: cmos 4026B 4033B 18 pin dual 7-SEGMENT LED DISPLAY 4026B data sheet DIVIDE-BY-60 seven 7-segment Display
Text: HCC/HCF4026B HCC/HCF4033B DECADE COUNTERS/DIVIDERS WITH DECODED 7-SEGMENT DISPLAY OUTPUTS WITH; DISPLAY ENABLE 4026B RIPPLE BLANKING 4033B . . . . . . . . COUNTER AND 7-SEGMENT DECODING IN ONE PACKAGE EASILY INTERFACED WITH 7-SEGMENT DISPLAY TYPES FULLY STATIC COUNTER OPERATION : DC
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HCC/HCF4026B
HCC/HCF4033B
4026B
4033B
100nA
4026B
cmos 4026B
4033B
18 pin dual 7-SEGMENT LED DISPLAY
4026B data sheet
DIVIDE-BY-60
seven 7-segment Display
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bu 5027
Abstract: FAU810 UVISOR 300 flame detectors ABB CI854 SF810 safe flame dfs CBM 4080 transistor BU 5027 FAU800 flame detector burner
Text: We reserve all rights in this document and in the information contained therein. Reproduction, use or disclosure to third parties without express authority is strictly forbidden. ABB Power System Division 2008 Flame Analysis Unit FAU810 Instruction Manual
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FAU810
9AKK101130D3801
1KGF100058;
9AKK101130D3801-D
bu 5027
UVISOR 300 flame detectors
ABB CI854
SF810
safe flame dfs
CBM 4080
transistor BU 5027
FAU800
flame detector burner
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3.3v to 5v use 34063
Abstract: led driver 34063 iTVC12 sm 34063 sae a14
Text: June 2000 2975 Stender Way, Santa Clara, California 95054-3090 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 2000 Integrated Device Technology, Inc.
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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pcr 4063
Abstract: SN 104 SCR image 31136 modem 56k sram OP 8368 0x2f68 IDT77252 ATM machine working circuit diagram bottle filling circuit diagram pti 8504
Text: IDT77252 ABR SAR User Manual Version 2.3 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc. Printed U.S.A.
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IDT77252
pcr 4063
SN 104 SCR image
31136
modem 56k sram
OP 8368
0x2f68
ATM machine working circuit diagram
bottle filling circuit diagram
pti 8504
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CI EEPROM 2816
Abstract: 31136 modem 56k sram pcr 4063 12697 scd 9104 SN 104 SCR image top 2556 en CRC10 CRC-10
Text: IDT77222 Micro SAR User Manual Version 1.0 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc.
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IDT77222
CI EEPROM 2816
31136
modem 56k sram
pcr 4063
12697
scd 9104
SN 104 SCR image
top 2556 en
CRC10
CRC-10
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CRC10
Abstract: CRC-10 CRC32 CRC-32 IDT77252 0x2f68 0C003
Text: IDT77252 ABR SAR User Manual Version 2.0 May 1, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc. Printed U.S.A.
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IDT77252
CRC10
CRC-10
CRC32
CRC-32
0x2f68
0C003
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GMM791000S
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar GST WÊ 40267S7 QD03S00 _r - y ^ - 2 3 " / g G M M 7 9 1 0 0 0 S - 6 0 /7 0 /8 0 /1 0 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod ule organized as 1,048,576 x 9 bits and consists of
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40267S7
QD03S00
GMM791000S
GM71C1000SJ)
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AAG3AA
Abstract: M6390 DTMF keypad with encoder GoldStar multi tone buzzers transistor a7n 10KO GIV36390 GM6390 IVI6390
Text: GOLDSTAR TECHNOLOGY INC/ B1E D m 4026757 DDOBOflS b • _ - r - iz - c n - o i GM6390 TONE/PULSE SWITCHABLE DIALER WITH REDIAL Description Pin Connection The GM6390 is a monolithic, integrated circuit manufactured using G S silicon Gate CMOS process. The device is TONE/
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GM6390
GM6390
AAG3AA
M6390
DTMF keypad with encoder
GoldStar
multi tone buzzers
transistor a7n
10KO
GIV36390
IVI6390
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01C09
Abstract: No abstract text available
Text: GoldStar GM23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex
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GM23C32000FW
16BIT
23C32000FW
44-SOP,
100pF*
402fl757
00D4D4f
01C09
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The
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GM71C
16160B/BL
42SOJ
GGQ4C544
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TRF 840
Abstract: GMM7321100BSG
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321100BS/SG is an lM x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321100BS/SG is
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GMM7321100BS/SG
GMM7321100BS/SG
GMM7321100BS
GMM7321100BSG
QQQb34
TRF 840
GMM7321100BSG
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ic ns 4263
Abstract: No abstract text available
Text: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various
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GM71C4263C
GM71CS4263CL
GM71C
4263C/CL
GM71C
0D07bStl
ic ns 4263
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD._ Description Features The GMM7361000CS/SG is a 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package find 4 pieces of 1M x lbit DRAMs in 20/26 pin SOJ package on both sides the
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GMM7361000CS/SG
7361000CS/SG
MIN100-1
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23C32000
Abstract: 23c3200 M23C32000
Text: GoldStar GM23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because
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GM23C32000
120/150ns.
42-DIP,
DDD4D44
23C32000
23c3200
M23C32000
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ci 740
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Fin Configuration 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000A
120/150ns.
ci 740
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Untitled
Abstract: No abstract text available
Text: # GM71V16403C GM71VS16403CL LG Semican Go Ltd LA3 o tS fT IIC U n W U .,L ,iU . CMOS DYNAMIC RAM Description Features The GM71V S 16403 C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and
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GM71V16403C
GM71VS16403CL
GM71V
16403C/CL
16403C/CL
402B7S7
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Fin Configuration The GM23C64050FW high perfonnance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
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GM23C64050FW
120/150ns.
44SOP,
A3-A20
000Sb02
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The GM23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low
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GM23C4000B
100/120/150ns.
23C4000B
32pin
100pF*
40E8757
DD0476D
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NA-1335
Abstract: 42-pin D GM23C8100A
Text: GM23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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GM23C8100A
GM23C8100A
8/512K
402A757
NA-1335
42-pin D
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GM71C17400AJ6
Abstract: GM71C17400AJ7
Text: @ LG Semicon. Co. LTD. Pin Configuration Description The GM71C17400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C17400A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C17400A offers Fast
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GM71C17400A
GM71C17400AJ6
GM71C17400AJ7
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