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    CHN 745 Search Results

    CHN 745 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CHN 550

    Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
    Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12


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    6004K12 ZNC-B10 ZN-B14 ZNC-B19 ZNC3-B22 ZNC-K19 VXI-11 CHN 550 CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent PDF

    1/CHN 326

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    SST39SF020 1/CHN 326 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection


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    SST38UF166 PDF

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    SST39SF512 CHN 512 CHN 314 1/CHN 852 PDF

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440 PDF

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    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


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    SST32LH802 128Kx16 SST32LH802 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:


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    SST39SF010 PDF

    Untitled

    Abstract: No abstract text available
    Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    SST39VF080Q_ SST39VF080Q PDF

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    SST39VF016Q_ SST39VF016Q Multi58-4276 27721 PDF

    oasis

    Abstract: SST39VF400 SST39VF400 read code
    Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:


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    16-Bit) SST39VF400 oasis SST39VF400 SST39VF400 read code PDF

    CHN 345 X

    Abstract: No abstract text available
    Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF040 32-Pin SST37VF040 CHN 345 X PDF

    CHN 602

    Abstract: CHN 847
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020


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    SST29EE020 SST29LE020 SST29VE020 CHN 602 CHN 847 PDF

    CHN 847

    Abstract: chn 734
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


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    SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734 PDF

    CHN 847

    Abstract: 29EE512
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns


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    SST29EE512 SST29LE512 SST29VE512 CHN 847 29EE512 PDF

    Untitled

    Abstract: No abstract text available
    Text: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors


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    16-Bit) SST39VF200 PDF

    TEKELEC te 306

    Abstract: 30601
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


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    SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601 PDF

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800 PDF

    CHN 329

    Abstract: DP 904C
    Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    16-Bit) SST39VF160Q SST39VF160 SST39VF160Q CHN 329 DP 904C PDF

    chn 347

    Abstract: No abstract text available
    Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF010 32-Pin SST37VF010 chn 347 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


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    SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A PDF

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


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    16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440 PDF

    CHN 949

    Abstract: tr/pcb-2-1/TRANSISTOR chn 602
    Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:


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    SST31LH041_ CHN 949 tr/pcb-2-1/TRANSISTOR chn 602 PDF

    RT 2070 L

    Abstract: ansi y14.5m-1982 decimal 2097b MS-001 72741
    Text: PACKAGE DIAGRAM OUTLINES PLASTIC DIP R E V ISIO N S DCN REV DESCRIPTION DATE 27853 06 REDRAW TO JEDEC FORMAT 03/15/95 APPROVED A A A — I— - E - - .0S0/.070 A I * 1 .01 0 I H lAdXBSX 1 1 - j- GlAUL HLANL It bad l-A -l SEATING PIANE


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    27B53 P16-1 MS-010, 9S054 PSC-4034 RT 2070 L ansi y14.5m-1982 decimal 2097b MS-001 72741 PDF

    T472

    Abstract: J155-1 747046 813305 63750-1
    Text: * » Í « : / t 1 0 8 *»««12*113-14-31 TEL 03 3445-5321 FAX{03)3443-7453 < *> ROHM CORPORATION 2150, C om m erce Drive, San Jose, C A 95131. U.S.A. TEL:(408)432-0500 TW X :9 lO -33 8 -2 1 16 FA X:(408)434-6444 * ± t« m /T 0 2 4 a ^ iM t± m * a 2 -ii- 2 3


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    flfr/T980 Br/T724 3gAffiAglBU3-26 RSi2-9-11 T472 J155-1 747046 813305 63750-1 PDF