CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
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6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
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CHN b42
Abstract: chn 743 pin of chn 743 chn 529 CHN 524 chn 729 CHN 849 CHN 616 CHN 847 RYM 17-18
Text: ADSP-21065L SHARC DSP Technical Reference Revision 2.0, July 2003 Part Number 82-001903-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent
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ADSP-21065L
I-127
I-128
16-bit
CHN b42
chn 743
pin of chn 743
chn 529
CHN 524
chn 729
CHN 849
CHN 616
CHN 847
RYM 17-18
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MCP3912
Abstract: No abstract text available
Text: MCP3912 3V Four-Channel Analog Front End Features: Description: • Four Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th Harmonic), 112 dBFS SFDR for Each Channel • Enables 0.1% Typical Active Power Measurement
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MCP3912
24-bit
16-Bit
MCP3912
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FRAME2
Abstract: No abstract text available
Text: MCP3919 3V Three-Channel Analog Front End Features: Description: • Three Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th Harmonic), 112 dBFS SFDR for Each Channel • Enables 0.1% Typical Active Power Measurement
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MCP3919
24-bit
16-bit
FRAME2
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Untitled
Abstract: No abstract text available
Text: MCP3910 3V Two-Channel Analog Front End Features: Description: • Two Synchronous Sampling 24-bit Resolution Delta-Sigma A/D Converters • 93.5 dB SINAD, -107 dBc Total Harmonic Distortion THD (up to 35th harmonic), 112 dB Spurious-Free Dynamic Range (SFDR) for Each
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MCP3910
24-bit
16-bit
Register-60-4-227-8870
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
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83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
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CHN 617
Abstract: CHN 602 chn 714
Text: • Microsemi m m Chatsworth, CA m P ro gress P ow ered b y T e chn o log y 21201 Itasca St. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features 10 A m p S ilico n R e ctifie r 50 to 1000 V olts For Surface Mount Applications Extremely Low Thermal Resistance
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DO-214AB
MSC0923
CHN 617
CHN 602
chn 714
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ST CHN 510
Abstract: chn 714 chn 725 CHN 725 diode CHN 520
Text: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents
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1N6815
MSASC25H45K)
1N6815R
1N6815)
1N6815R)
MSASC25H45KR)
MSC1032A
ST CHN 510
chn 714
chn 725
CHN 725 diode
CHN 520
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chn 714
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX40N30A
chn 714
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chn 714
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts 11 Amps High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode
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MSAFX11P50A
MSAFX24N50A
MSC0308A
20Voc,
chn 714
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Untitled
Abstract: No abstract text available
Text: Microsemi r n m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features 70 Volts 76 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX76N07A
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chn 714
Abstract: No abstract text available
Text: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A Features 100 Volts 50 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)
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MSAEZ50N10A
MSAFZ50N10A
chn 714
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|
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chn 714
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features 100 Volts 75 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX75N10A
chn 714
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CHN 950
Abstract: chn 714
Text: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features 200 Volts 30 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)
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MSAER30N20A
MSAFR30N20A
CHN 950
chn 714
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Untitled
Abstract: No abstract text available
Text: Microsemi r n m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft
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MSAEX8P50A
MSAFX24N50A
Break00
20Voc,
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAER38N10A MSAFR38N10A Features 100 Volts 38 Amps Ultrafast rectifier in parallel with the body diode (MSAE type only)
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MSAER38N10A
MSAFR38N10A
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only)
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MSAEZ33N20A
MSAFZ33N20A
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chn 714
Abstract: transistor CHN 64
Text: Microsemi m m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A Features 600 Volts 60 Amps 2.9 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof
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MSAGX60F60A
MSAHX60F60A
60F60B
MSAHX60F60A
chn 714
transistor CHN 64
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CHN 714
Abstract: No abstract text available
Text: Microsemi m m m S a n ta A n a , C A m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features 1200 Volts 52 Amps Rugged polysilicon gate cell structure high current handling capability, latch-proof
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MSAGZ52F120A
MSAHZ52F120A
Z52F120B
MSAHZ52F120A
CHN 714
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Untitled
Abstract: No abstract text available
Text: □IXYS Alabama A ll Am erican Huntsville, AL 205-837-1555 Future Electronics Huntsville, AI. 205-830-2322 N u H orizons Huntsville, AL 205-722-9330 Arizona Future Electronics Phoenix, AZ 602-968-7140 C alifornia North A ll Am erican San Jose, CA 408-441-1300
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mode selection table of ic 7495
Abstract: No abstract text available
Text: group Data Sheet March 1999 Lucent Technologies Bell Labs Innovations T7504 and T5504 Quad PCM Codecs with Filters • Operating temperature range: -4 0 °C to +85 °C Features ■ |a,-law/A-law companding selectable ■ 5 V only Low-power, latch-up-free CMOS technology
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T7504
T5504
PUB43801)
DS99-184ALC
DS96-082ALC)
mode selection table of ic 7495
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Untitled
Abstract: No abstract text available
Text: group Data Sheet March 1999 Lucent Technologies Bell Labs Innovations T7504 and T5504 Quad PCM Codecs with Filters • Operating temperature range: -4 0 °C to +85 °C Features ■ |a,-law/A-law companding selectable ■ 5 V only Low-power, latch-up-free CMOS technology
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T7504
T5504
PUB43801)
DS99-201ALC
DS99-184ALC)
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