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    CHEMI-CON MV SERIES Search Results

    CHEMI-CON MV SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical Visit Murata Manufacturing Co Ltd
    MP-54RJ45UNNE-002 Amphenol Cables on Demand Amphenol MP-54RJ45UNNE-002 Cat5e Non-Booted Patch Cable with RJ45 Connectors (350MHz) 2ft Datasheet
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    MP-54RJ45UNNE-001 Amphenol Cables on Demand Amphenol MP-54RJ45UNNE-001 Cat5e Non-Booted Patch Cable with RJ45 Connectors (350MHz) 1ft Datasheet
    CN-ACPRREDAA0 Amphenol Cables on Demand RCA Male Plug Cable Connector (Red) - Amphenol ACPR-RED - Gold Plated Diecast Shell Datasheet

    CHEMI-CON MV SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: P34TG-xxxxE/Z2:1MLF PMD-SERIES Rev.11-2008 8 Watt Regulated Single and Dual Output 1.5 kV DC I/O Isolation DIP24 Metal Case Continuous Short Circuit Prot. Full SMD Technology Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070


    Original     		PDF P34TG-xxxxE/Z2 DIP24 D-55299 1500VDC 220uF/100V) EN61000-4-4 EN61000-4-5. EN55022

    Untitled

    Abstract: No abstract text available
    Text: P44TG-xxxxE/Z4:1MLF PMV-SERIES Rev.02-2009 12 Watt, 4:1 Ultra Wide Input DIP24 Metal Case 1.5 kV DC I/O Isolation Single and Dual Reg. Output Continuous Short Circuit Prot. Over Voltage/Load Protection Soft Start, Remote Ctrl. Mainzer Straße 151–153 D-55299 Nackenheim


    Original     		PDF P44TG-xxxxE/Z4 DIP24 D-55299 1500VDC EN61000-4-4 EN61000-4-5 EN61000-4-. 330uF/100V

    628k

    Abstract: Panasonic Electrolytic Capacitor EEUFC1H681 sprague capacitor 470uF 25V
    Text: PT6340 Series 6 Amp 12V Input Adjustable Integrated Switching Regulator SLTS138 Revised 1/24/2001 Features Description • 6 Amp Output Current • Input Voltage Range: 10.8V to 13.2V • 90% Efficiency • Excellent Thermal Properties • Temp Range: –40 to +85°C


    Original     		PDF PT6340 SLTS138 12-pin 628k Panasonic Electrolytic Capacitor EEUFC1H681 sprague capacitor 470uF 25V

    J698

    Abstract: NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3 J698 NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3

    0119A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 MRF6S19200HR3 0119A

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3

    NIPPON CAPACITORS

    Abstract: MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19200HR3 ATC100B100CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 MRF6S19200HR3 NIPPON CAPACITORS MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 ATC100B100CT500XT

    NIPPON CAPACITORS

    Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3 NIPPON CAPACITORS p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HSR3

    j6808

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3

    EMVY250ADA

    Abstract: GPS-1830 465B A114 A115 AN1955 JESD22 MRFE6S9135HR3 MRFE6S9135HSR3 CRCW12062201FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9135H MRFE6S9135HR3 MRFE6S9135HSR3 MRFE6S9135HR3 EMVY250ADA GPS-1830 465B A114 A115 AN1955 JESD22 MRFE6S9135HSR3 CRCW12062201FKEA

    IrL 1540 N

    Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22

    465B

    Abstract: A114 A115 AN1955 JESD22 MRFE6S9205HR3 MRFE6S9205HSR3 EKME630ELL471MK255 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9205H MRFE6S9205HR3 MRFE6S9205HSR3 MRFE6S9205HR3 465B A114 A115 AN1955 JESD22 MRFE6S9205HSR3 EKME630ELL471MK255 Nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6S9135H MRFE6S9135HR3 MRFE6S9135HSR3 MRFE6S9135HR3

    sfh817a

    Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
    Text: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated


    Original     		PDF TND401/D 680uH EFD30 NCP1052P44G TP207ST PH9080NL sfh817a 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    J0743

    Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22

    j633

    Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j633 Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 w1760

    j1303

    Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3

    Untitled

    Abstract: No abstract text available
    Text: M O U N T -85°C MVBP Series SURFACE MV UNITED CHEMI-CON • Surface Mount ■ Bi-Polar ■ Low Profile Vertical Chip ■ Solvent Proof ■ +85°C Maximum Temperature The MVBP series are the bi-polar versions of the MV series. These surface mount capacitors are


    OCR Scan     		PDF VBP50VCR33MD55TP MVBP50VCR47MD55TP MVBP50VCR68MD55TP MVBP50VC1R0MD55TP MVBP50VC1R5MD55TP MVBP50VC2R2ME55TP MVBP50VC3R3ME55TP MVBP50VC4R7MF55TP

    Untitled

    Abstract: No abstract text available
    Text: UNITED CHEMI-CON f t / l V Series •Surface Mount ■Low Profile Vertical Chip ■Solvent Proof ■+85°C Maximum Temperature A ctual ‘ - -r - - r s . : “• i 'S'i:-:':; S ’": Kp The MV series capacitors are the standard vertical chip capacitors designed for reflow soldering.


    OCR Scan     		PDF MOUNT-85Â V50VCR22M MV35VC10RME55 MV16VC10RMD55 MV10VC68RMF55