Switching Thyristors
Abstract: 150 Amps dimmer module NH5 Diode triac 220v light dimmer filter coil Application silicon bilateral switch light Dimmer tektronix 576 curve tracer motorola triac catalog Q6012LTH1LED
Text: PRODUCT CATALOG & DESIGN GUIDE Power Switching Semiconductor Products Teccor brand Thyristors table of Contents IT RMS VDRM/VRRM Thyristor Product Descriptions Product Packages Quality and Reliability Assurance V-I Characteristics of Thyristor Devices Electrical Parameter Terminology
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Dxx25L
Dxx25LTP
O-220AB
D6015L
O-220
EC114Nv1214
Switching Thyristors
150 Amps dimmer module
NH5 Diode
triac 220v light dimmer filter coil
Application silicon bilateral switch light Dimmer
tektronix 576 curve tracer
motorola triac catalog
Q6012LTH1LED
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UJT 2N2646
Abstract: UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode
Text: BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead
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BZX85C3V3RL
DO-41
204AL)
UJT 2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
UJT pin diagram 2N2646
UJT 2N2646 specification
diode zener BZX 61 C 10
UJT 2N2646 PIN VIEW
pin diagram of UJT-2N2646
varistor pdz 320
BZX 460 zener diode
1N4742A 12 volt zener diode
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IC1201
Abstract: smd diode 748 36A RP1H "cross reference" RP1-12V RP1-24V RP1-H-12V RP1-H-24V F 245C glow plug relay "7 pin" ir tk 69
Text: RP ULTRA LOW PROFILE HIGH FREQUENCY RELAY 10.6 .417 RP-RELAYS • High frequency relay with the low profile of 4 mm .157 inch • Excellent high frequency characteristics Isolation: 10 dB or more at 1.8 GHz Insertion loss: 1 dB or less (at 1.8 GHz) V.S.W.R.: 1.3 or less (at 1.8 GHz)
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applications of ujt
Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
Text: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)
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NTE6410
NTE6410
300mW
applications of ujt
ujt transistor
UJT APPLICATION
applications of ujt with circuits
ujt as a relaxation oscillator
Unit junction transistor UJT
unijunction transistor
ujt data book free download
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Untitled
Abstract: No abstract text available
Text: Product Brief 1 – IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • Segmented, Hierarchical Routing and Clock Structure • • • • • 1.2 V or 1.5 V Core Voltage for Low Power
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A3P010
Abstract: No abstract text available
Text: Advance v0.2 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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AGLN010
Abstract: AGN060 JESD8-12A
Text: Advance v0.2 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS
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Untitled
Abstract: No abstract text available
Text: v1.2 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation
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QN68
Abstract: VQ100 actel part markings
Text: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
128-Bit
QN68
VQ100
actel part markings
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RT3PE600L
Abstract: No abstract text available
Text: Advance v0.1 Radiation-Tolerant ProASIC 3 Low-Power SpaceFlight Flash FPGAs ® with Flash*Freeze Technology Features and Benefits • High-Performance, Low-Skew Global Network • Architecture Supports Ultra-High Utilization MIL-STD-883 Class B Qualified Packaging
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MIL-STD-883
RT3PE600L
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AGLP030
Abstract: No abstract text available
Text: v1.2 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits High-Performance Routing Hierarchy Low Power Advanced I/O • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation
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AGLN010
Abstract: No abstract text available
Text: Advance v0.4 IGLOO nano Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Advanced I/Os • 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation • Bank-Selectable I/O Voltages—up to 4 Banks per Chip • Single-Ended I/O Standards: LVTTL, LVCMOS
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QN68
Abstract: VQ100 PAC11 ProASIC3 handbook
Text: Advance v0.5 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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130-nm,
128-Bit
QN68
VQ100
PAC11
ProASIC3 handbook
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Untitled
Abstract: No abstract text available
Text: Advance v0.3 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process
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IO125
Abstract: IO05PDB0V0 IO32PDB1V1 A3PE600
Text: ProASIC 3E Datasheet P ro du c t Br ie f 1 – ProASIC®3E Flash Family FPGAs with Optional Soft ARM®Support Features and Benefits Pro Professional I/O • • • • High Capacity • • • 600 k to 3 Million System Gates 108 to 504 kbits of True Dual-Port SRAM
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130-nm,
64-Bit
128-Bit
IO125
IO05PDB0V0
IO32PDB1V1
A3PE600
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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SN7449
Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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SN15312
SN15325,
SN15370
SN7449
54175
SN7401
74L42
SN7437
SN74S40
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251C
Abstract: 600Y cdi ic
Text: T his m a te ria l and the Inform ation herein is ihe p ro p e rty o f f ujt Etccmc Co ltd I hey shall be neither re p ro d u c e d , c o p i e d le n t, o' disclosed in any s»dy w h a ts o e v e r lor the use of a n y third pa/ty.nor used for the m .inufacTuring p u r p o s e s w ith o u t
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0QQm74
IC-400A.
0DDMT77
251C
600Y
cdi ic
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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Untitled
Abstract: No abstract text available
Text: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase
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175mA
T092/T098
9h/127b
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NTE+6402
Abstract: No abstract text available
Text: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo
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2N6120
Abstract: applications of ujt 2N6119 PN6119 PN6119-18R PN6120 PN6120-18R PROGRAMMABLE UJT 2N6119-2N6120
Text: Data Sheet central PN6119-18R PN6120-18R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNPN SILICON PROGRAMMABLE UJT Sem iconductor Corp. JEDEC T0-92-18R CASE (AGK) Manufacturers of World Class Discrete Semiconductors
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PN6119-18R
PN6120-18R
T0-92-18R
PN6120-18R
2N6119,
2N6120
100iis)
PN6119'
PN6120
10kfi
applications of ujt
2N6119
PN6119
PROGRAMMABLE UJT
2N6119-2N6120
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IC LA 78141
Abstract: Pin Configuration of IC 78141 IC LA 78141 characteristics 50U50 Electrical Wiring Diagram Toyota ice ci LA 78141 IC LA 78141 pin number voltage reading qlr 615
Text: TMS320P25 DIGITAL SIGNAL PROCESSOR SPRS028 - OCTOBER 1994 " Instruction Cycle Time of 100 ns 40 MHz FN PACKAGE (T O P V IE W ) > * 4K Words of On-Chip Secure Program EPROM _ _ o T- w n ^ uJti — S û û û û û û û îli * 544 Words of On-Chip Data RAM
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TMS320P25
SPRS028
32-Blt
16-Bit
32-Bit
CH-8953
A0294
IC LA 78141
Pin Configuration of IC 78141
IC LA 78141 characteristics
50U50
Electrical Wiring Diagram Toyota ice
ci LA 78141
IC LA 78141 pin number voltage reading
qlr 615
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Ujts
Abstract: No abstract text available
Text: M O T O R O L A SC DIODES/OPTÔ BSE I> • b3b7SSS 0ÜÖ1213 3 ■ 7-37-Ä/ M U10 M U20 PN Unijunction Transistors Silicon Annular Unijunction Transistors . . . d esig n ed fo r eco n o m ica l, general purp ose use in pulse, tim in g, oscillator and PN UJTs
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