J111
Abstract: j113 j112
Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C
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226AA)
J111
j113
j112
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transistor J111
Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C
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Original
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BSR58LT1
OT-23
transistor J111
transistor J112
MARKING RK
J113
SOT-23 marking M6
140 j112
m6 marking j-fet
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PDF
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J112
Abstract: J113 j111 J112 jfet J111/5
Text: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C
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O-226AA)
J112
J113
j111
J112 jfet
J111/5
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MPF971
Abstract: MPF970
Text: MOTOROLA Order this document by MPF971/D SEMICONDUCTOR TECHNICAL DATA JFET Switching P–Channel — Depletion MPF971 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 30 Vdc VGSR
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Original
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MPF971/D
MPF971
226AA)
MPF971
MPF970
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PDF
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MPF4393
Abstract: No abstract text available
Text: ON Semiconductort 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N–Channel – Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage
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Original
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MPF4392
MPF4393
226AA)
MPF4393
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PDF
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Untitled
Abstract: No abstract text available
Text: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f
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Original
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MPF4392,
MPF4393
O-226AA)
MPF4392/D
MPF4392
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PDF
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j310
Abstract: J309 J310 equivalent
Text: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N–Channel – Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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Original
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226AA)
j310
J309
J310 equivalent
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PDF
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j310
Abstract: j310 equivalent
Text: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N−Channel − Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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Original
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O-226AA)
j310
j310 equivalent
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PDF
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jfet j112
Abstract: J113 j111 transistor J112 J112 J112 TO92
Text: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C
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Original
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226AA)
r14525
J111/D
jfet j112
J113
j111
transistor J112
J112
J112 TO92
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PDF
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application note jfet J111 transistor
Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
Text: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C
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Original
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BSR58LT1
r14525
BSR58LT1/D
application note jfet J111 transistor
jfet J111 transistor
transistor J111
BSR58LT1
transistor j113
j113 equivalent
J111
J112
J113
CODE m6
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PDF
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meggitt resistors
Abstract: FO511 18kJ
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS Aluminium Housed Power Wirewound Resistors TYPE CFH SERIES The CFH series from Meggitt CGS is a range of high quality power resistors, aluminium housed and designed to achieve
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C
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Original
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226AA)
r14525
J112/D
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PDF
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meggitt resistors
Abstract: No abstract text available
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS Aluminium Housed Power Wirewound Resistors TYPE CRF SERIES The CRF series from Meggitt CGS is a range of quality resistors designed to achieve environmental protection
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transistor j112
Abstract: J112 jfet j112
Text: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C
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Original
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226AA)
r14525
J112/D
transistor j112
J112
jfet j112
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PDF
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MPF4392
Abstract: MPF4393
Text: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f
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Original
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MPF4392,
MPF4393
O-226AA)
MPF4392/D
MPF4392
MPF4393
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PDF
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j112
Abstract: j112g J111
Text: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current
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Original
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J111/D
j112
j112g
J111
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PDF
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Diode R4D
Abstract: MPF4392 MPF4393 cgs clad
Text: ON Semiconductort 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N–Channel – Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage
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Original
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MPF4392
MPF4393
226AA)
r14525
MPF4392/D
Diode R4D
MPF4392
MPF4393
cgs clad
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PDF
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BSR58LT1
Abstract: No abstract text available
Text: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50
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Original
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BSR58LT1
BSR58LT1/D
BSR58LT1
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PDF
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MALLORY CAPACITORS type HES
Abstract: MALLORY CAPACITORS cgs series MIL-C-39018
Text: Selector Guide & Performance Specifications Computer Grade Capacitors • Type r ; i T e m p e ra tu re R ange CGS/ CGH -40°C to +85°C | Range VDC j Hours r Low > ■ Life Test @°C| Cap j 10 to 500 1000 +85 Good 10 to 450 2000 +85 Best HES -40°C to +105°C 350 to 400
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OCR Scan
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1000Q
Company/7545
46214-3073/Phone:
273-0090/Fax:
273-2400/www
MALLORY CAPACITORS type HES
MALLORY CAPACITORS cgs series
MIL-C-39018
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PDF
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MALLORY CAPACITORS cgs
Abstract: MALLORY TYPE CGS S85IU CGS402T200W4C 24U02 CGS35IT450R5C si93 CGS302U025 CGS102T350V4C cgs822u035r3c
Text: Type CGS • MallorY Computer Grade Capacitors GENERAL SPECIFICATIONS DC Leakage C urrent: I = .006 V C V after 30 minutes Not to exceed 6mA C = Capacitance in V = Rated Voltage I = Leakage Current in mA ■ High CV Product ■ Screw Terminals ■ Suitable for use in most
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OCR Scan
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75/iF
000/xF
valuS45IT450V3C
CGS48IT450V4C
CGS651T450V4C
CGS80IT450V4L
CGS971T450V4C
102T450W
142T450W
142T450V5L
MALLORY CAPACITORS cgs
MALLORY TYPE CGS
S85IU
CGS402T200W4C
24U02
CGS35IT450R5C
si93
CGS302U025
CGS102T350V4C
cgs822u035r3c
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PDF
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41/CGS313U050W4C
Abstract: No abstract text available
Text: Type CGS • Computer Grade Capacitors mmmmmmms ms ms B a - a m GENERAL SPECIFICATIONS ■ High CV Product ■ Screw Terminals ■ Suitable for use in most demanding applications requiring high current filtering or energy storage ■ Custom Designs Available
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OCR Scan
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S312T450W5L
CG3332T450X5L
CGS352T450W5L
CGS362T450W5L
CGS362T450X4L
CGS462T450X5L
CGS472T450X5C
CGS532T450X5L
CGS582T450X5R
S772T450X8L
41/CGS313U050W4C
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PDF
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MALLORY CGS CAPACITORS
Abstract: mallory capacitor fp CGS222U050R2C Mallory Type CGS Mallory cgs MALLORY CAPACITOR CATALOG MALLORY 150 M CAPACITORS
Text: • Types CGS, CG, CGR, CGO, CGH Dimensions and Size Charts MallorY Case Code Chart Uninsulated Can_ _Inches . — A O O ro a « o E 3 R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L
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OCR Scan
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CGS131T350R2C
CGS251T350R3C
CGS381T350R4C
CGS651T350V3C
CGS801T350V4C
102T350R4C
CGS102T350V4C
CGS132T350V5L
CGS152T350W4C
CGS162T350V4C
MALLORY CGS CAPACITORS
mallory capacitor fp
CGS222U050R2C
Mallory Type CGS
Mallory cgs
MALLORY CAPACITOR CATALOG
MALLORY 150 M CAPACITORS
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PDF
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2N5640
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N-Channel — Depletion 2N 5555 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage VDG 25 Gate-Source Voltage vgs 25 Vdc Forward Gate Current Ig f 10
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OCR Scan
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b3b7255
2N5640
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PDF
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RD2001
Abstract: MPF4392
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Sw itching N-Channel — Depletion M PF4392 M PF4393 1DRAIN Motorola Preferred Devices MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit Vdc Vdc Vd S 30 Drain-Gate Voltage Vd G 30 Gate-Source Voltage
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OCR Scan
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PF4392
PF4393
MPF4392
RD2001
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PDF
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