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    CGHV27 Search Results

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    CGHV27 Price and Stock

    MACOM CGHV27015S

    RF MOSFET HEMT 50V 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV27015S Reel 1,000 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $38.34768
    • 10000 $38.34768
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    CGHV27015S Cut Tape 178 1
    • 1 $49.03
    • 10 $45.743
    • 100 $39.7172
    • 1000 $39.7172
    • 10000 $39.7172
    		Buy Now
    CGHV27015S Digi-Reel 1
    • 1 $49.03
    • 10 $45.743
    • 100 $39.7172
    • 1000 $39.7172
    • 10000 $39.7172
    		Buy Now
    Mouser Electronics CGHV27015S 198
    • 1 $51.39
    • 10 $45.79
    • 100 $40.19
    • 1000 $38.75
    • 10000 $38.75
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    Verical CGHV27015S 50 2
    • 1 -
    • 10 $67.05
    • 100 $67.05
    • 1000 $67.05
    • 10000 $67.05
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    Richardson RFPD CGHV27015S 50 1
    • 1 $67.04
    • 10 $67.04
    • 100 $67.04
    • 1000 $67.04
    • 10000 $67.04
    		Buy Now

    MACOM CGHV27030S

    RF MOSFET HEMT 50V 12DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV27030S Reel 500 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $58.08428
    • 10000 $58.08428
    		Buy Now
    CGHV27030S Cut Tape 211 1
    • 1 $69.88
    • 10 $66.382
    • 100 $59.8312
    • 1000 $59.8312
    • 10000 $59.8312
    		Buy Now
    CGHV27030S Digi-Reel 1
    • 1 $65.42
    • 10 $62.145
    • 100 $56.0122
    • 1000 $56.0122
    • 10000 $56.0122
    		Buy Now
    Mouser Electronics CGHV27030S 121
    • 1 $69.86
    • 10 $63.31
    • 100 $56.76
    • 1000 $55.02
    • 10000 $55.02
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    Richardson RFPD CGHV27030S 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $51.89
    • 10000 $51.89
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    MACOM CGHV27060MP

    RF MOSFET HEMT 50V 20TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV27060MP Cut Tape 191 1
    • 1 $132.44
    • 10 $126.175
    • 100 $123.4908
    • 1000 $123.4908
    • 10000 $123.4908
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    CGHV27060MP Reel 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $115.43696
    • 10000 $115.43696
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    Mouser Electronics CGHV27060MP 5
    • 1 $132.44
    • 10 $126.15
    • 100 $123.43
    • 1000 $121.02
    • 10000 $121.02
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    Richardson RFPD CGHV27060MP 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $121.01
    • 10000 $121.01
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    MACOM CGHV27030S-AMP1

    CGHV27030S DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV27030S-AMP1 Box 2 1
    • 1 $676.78
    • 10 $676.78
    • 100 $676.78
    • 1000 $676.78
    • 10000 $676.78
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    Mouser Electronics CGHV27030S-AMP1
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    Richardson RFPD CGHV27030S-AMP1 1
    • 1 -
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    MACOM CGHV27060MP-AMP3

    EVAL BOARD FOR CGHV27060
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV27060MP-AMP3 Bulk 2 1
    • 1 $810.9
    • 10 $810.9
    • 100 $810.9
    • 1000 $810.9
    • 10000 $810.9
    		Buy Now
    Richardson RFPD CGHV27060MP-AMP3 1
    • 1 -
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    Find more CGHV27 price and stock on Findchips.com

    CGHV27 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV27015S Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 50V 12DFN Original PDF
    CGHV27030S Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 50V 12DFN Original PDF
    CGHV27030S-AMP1 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP1 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP2 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP2 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP3 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP3 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP4 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP4 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP5 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27030S-AMP5 Wolfspeed CGHV27030S DEV BOARD WITH HEMT Original PDF
    CGHV27060MP Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 50V 20TSSOP Original PDF
    CGHV27060MP-AMP1 Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - EVAL BOARD FOR CGHV27060 Original PDF
    CGHV27060MP-AMP3 Wolfspeed 0.8-2.7GHZ, AMP W/ CGHV27060MP Original PDF
    CGHV27060MP-TB Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST FIXTURE FOR CGHV27060MP Original PDF
    CGHV27100F Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ Original PDF
    CGHV27100-TB Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ 440162 Original PDF
    CGHV27200F Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 200W 2.7GHZ 440162 Original PDF
    CGHV27200-TB Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ 440162 Original PDF

    CGHV27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27150MP 150 W, 2300-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27150MP ideal for 2.3 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV27150MP CGHV27150MP CGHV27

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27300MP 300 W, 2300-2700 MHz, GaN HEMT for LTE Cree’s CGHV27300MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27300MP ideal for 2.32.7 GHz LTE and BWA amplifier applications. The transistor is input matched


    Original     		PDF CGHV27300MP CGHV27300MP CGHV27

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom


    Original     		PDF CGHV27015S CGHV27015S 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom


    Original     		PDF CGHV27015S CGHV27015S 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P

    CGHV27100

    Abstract: CGHV27 cree rf
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    cree rf

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    transistor smd 1p8

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27 transistor smd 1p8

    Untitled

    Abstract: No abstract text available
    Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7


    Original     		PDF CGHV27100 CGHV27100 CGHV27 GHV27100P

    Untitled

    Abstract: No abstract text available
    Text: CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom


    Original     		PDF CGH27030S CGH27030S CGH2703

    Untitled

    Abstract: No abstract text available
    Text: CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom


    Original     		PDF CGH27030S CGH27030S CGH2703