d-10
Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,
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Q62702-F1393
Q62702-F1394
d-10
gaas fet marking a
GaAs FET cfy 19
CFY 35-20
F1393
f1394
marking code 5
Q62702-F1393
Q62702-F1394
siemens gaas fet
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cfy siemens
Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Text: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
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CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
cfy siemens
CFY77-10
cfy77
HEMT marking P
059 906 051
CFY77-08
Q62702-F1549
Q62702-F1559
cfy 14 siemens
HEMT marking K
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F5049
Abstract: siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters Q62703-F97
Text: CFY 30 GaAs FET Datasheet * Low noise Fmin = 1.4 dB @ 4 GHz * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz
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Q62703-F97
OT-143
F5049
siemens gaas fet
76 marking code SIEMENS
gaas fet marking a
CFY30
HL 050 118 31 04
FET marking code
FET marking codes
FET transistors with s-parameters
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CFY10
Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62703-F11
fl23SbOS
00b74cÃ
CFY10
fl235fci05
CFY10
siemens gaas fet
CFY 10
Ga FET marking k
CFY 18
cfy 14 siemens
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cfy 14 siemens
Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5
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fl23SbDS
cfy 14 siemens
CFY 18
CFY 10
cfy siemens
CFY12
CFY10
CFY 18-23
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cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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CFY19-22
Abstract: CFY19 Dual-Gate* bf981 bf987
Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '
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BF930
BF994S
BF996S
BF998
BF1012
CF739
CF750
OT-143
CFY19-18
CFY19-22
CFY19
Dual-Gate* bf981
bf987
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CFY75
Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-F1368
Q62702-F1369
235b05
DDL75MG
CFY75
EHT08184
fl235b05
0QL7S41
CFY75
cfy 75
cfy 14 siemens
HEMT marking P
FMI 591
cfy siemens
CFY 19
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GaAs FET cfy 19
Abstract: S11 SIEMENS z0 607 MA 7a
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20
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V5005553
Q62702-F1393
Q62702-F1394
GaAs FET cfy 19
S11 SIEMENS
z0 607 MA 7a
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3tb 50 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
535bD5
D155EÃ
3tb 50 siemens
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cfy 19 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62703-F14
Q62703-F3
G0b7502
00h7S03
cfy 19 siemens
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GaAs FET cfy 14
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration
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Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
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Untitled
Abstract: No abstract text available
Text: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation
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Q62703-F97
OT-143
D15SS7b
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5N521
Abstract: CFY30
Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization
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cfy siemens
Abstract: cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10
Text: SI EM ENS A K T I E N G E S E L L S C H A F 47E D fl235büS OOSbSflü □ « S I E G GaAsFETs Metal Ceramic Package Type B B S El □ S S Max. ratings Package M arking Fig. 14 14 100 mil 100 mil C10 C11 23 23 — - 11.5 11.5 - - Cerec-XF Cerec-XF Cerec-XF
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fl235b
OT-143
cfy siemens
cfy 19 siemens
CFY 19
cfy 14 siemens
MARKING SOT-143 C5
CFY 18
CFY 10
6MA80
CFY10
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HEMT marking K
Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Text: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VS005553
CFY77-08
Q62702-F1549
CFY77-10
Q62702-F1559
chap18
S35bD5
HEMT marking K
marking t54
CFY 18
cfy 14 siemens
marking code 51C
HEMT
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Untitled
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking
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NF 847 G
Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W
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858/W
857/W
IQ62702-C1847
Q62702-C954
62702-C1884
Q62702-C1850
Q62702-C1742
Q62702-F1393
Q62702-F1394
Q62703-F97
NF 847 G
NF 833
nf 739
BA 857
k d 998 0
BAT 99
diode bav
Siemens transistors rf
CFY 35-20
6149-5X
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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SIEMENS 230 92 O
Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
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CFY30
Q62703-F97
OT-143
SIEMENS 230 92 O
siemens gaas fet
gaas fet marking a
FET GAAS marking a
CFY 18
siemens 230 98 O
siemens 230 99 o
CFY30
S11 SIEMENS
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CFY77-10
Abstract: HEMT HEMT marking K 036 906 051 VS005553
Text: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type
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VS005553
CFY77-08
CFY77-10
Q62702-F1549
Q62702-F1559
CFY77-10
HEMT
HEMT marking K
036 906 051
VS005553
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BDP 284
Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
Q62702-A829
Q62702-A859
Q62702-A950
Q62702-A952
Q62702-A608
Q62702-A718
Q62702-A687
BDP 284
BAV 217
Q62702-C2259
BAT 545
Q62702F1240
Q62702-A773
bdp 497
Q62702-C944
Q62702-D339
Q62702-C1529
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CFY30
Abstract: CFY 18
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
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CFY30
Q62703-F97
OT-143
CFY30
CFY 18
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62703-F
Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure
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0G1734Ô
CFY30
62703-F
OT-143
fl23b32Q
GG173S7
T--31--25
CFY30
GaAs FET cfy 19
siemens gaas fet
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