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    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861N51/OPB861N55 SEE NOTE 3 OPTICAL .126 3 .1 8 H CENTERLINE -.4 8 5 (12.32 r .11Q (2.79) The OPB861N series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN


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    OPB861N51/OPB861N55 OPB861N OPB861N51 OPB861N55 0PB861N 0D0b370 PDF

    Untitled

    Abstract: No abstract text available
    Text: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo­ transistor across a .125" 3.18 m m gap. A unique


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    SELEC1324 QVB11133 QVB11134 QVB11233 QVB11234 QVB11333 QVB11334 QVB21113 QVB21114 QVB21213 PDF

    Untitled

    Abstract: No abstract text available
    Text: EHI REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 DESCRIPTIO N PACKAGE DIMENSIONS The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting


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    QRC1133 QRC1133 1------ST1781 ORC1133 D00fc PDF

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 DESCRIPTION OPTICAL ' CENTERLINE The OPB862T series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" 3.18 mm gap. A unique


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    OPB862T51/OPB862T55 OPB862T OPB862T51 OPB862T55 0PB862T PDF

    Untitled

    Abstract: No abstract text available
    Text: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE


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    L14Q1 L14Q1 ST1335 100pps ST1112-11 Q00bM3fl PDF

    Untitled

    Abstract: No abstract text available
    Text: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an


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    VE11233 ST2176 PDF

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


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    H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1 PDF

    st12

    Abstract: CQX14 CQX16 ST1332
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255


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    CQX14, CQX16 ST1332 CQX14/16 940nm ST1271 ST1276 ST1272 ST1275 ST1273 st12 CQX14 CQX16 ST1332 PDF

    Untitled

    Abstract: No abstract text available
    Text: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment


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    1N6266 1N6266 940nm L14G1 L14G2 L14G1. 74bbfl51 PDF

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB867T51/OPB867T55 DESCRIPTION > < f •-.3 1 3 (7 .9 4 ) - .125 {3 1 7 ) - OPTICAL - v c e n t e r l in e X -.4 8 5 (12.32) j-.110(2.79) — \ _ t —'ET - r I .425 (10.79) I— , I .345 (8.76) * ». .100 (2.54)


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    OPB867T51/OPB867T55 OPB867T OPB867T51 OPB867T55 74bbfl51 PDF

    Untitled

    Abstract: No abstract text available
    Text: [ s Q OPTOLOGICT OPTOELECTRONICS QSA156/157/158/159 PACKAGE DIMENSIONS .189 4.80 030 (0.76) J 7 MAX I .500 (12.78) Mir> ' 1IN .021 (0.53) ' .016(0.41) DIA 3 PLCS VCC OUTPUT GROUND DESCRIPTION The QSA15X family are OPTOLOGIC ICs which feature a Schmitt trigger at output which provides hysteresis for


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    QSA156/157/158/159 QSA15X QSA157 QSA158 QSA159 PDF

    154010

    Abstract: No abstract text available
    Text: MODEL BML SERIES Surface Mount Multi-Layer Chip Inductors Size: 0603 to 1206 O U TS TA N D IN G FEATURES Tight dimensional tolerances and a small package make this chip ideal for high density installation Monolithic structure for high reliability Magnetic shielded construction minimizes coupling to other components_


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    51tethnologies 154010 PDF

    transistor TIP 320

    Abstract: OPB862T OPB862T51 OPB862T55 MW111 TRANSISTOR 751
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 PACKAGE DIMENSIONS .313 7.94 OPTICAL 125 (3’ 17)~ CENTERLINE - .485 (12.32) r .110 (2.79) E" .345 (8.76) 1— L .020 (o.5 i r r — .100 (2.54) y , .425 (10.90) MIN FEATURES i L\ PN 1 IDENTIFICATION


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    OPB862T51/OPB862T55 OPB862T OPB862T51 OPB862T55 67mW/Â transistor TIP 320 MW111 TRANSISTOR 751 PDF

    H22B1

    Abstract: H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75
    Text: £ BPTOELECTBDHiCS SLOTTED OPTICAL SWITCH H22B1/2/3 PACKAGE DIMENSIONS —*| fai I— l_ L </>b 3 I bi S E C T IO N X - X LEAD PR O FILE SYMBOL MflUMETERS MIN, MAX. 10.7 A 11.0 3.2 3.0 A, .600 4>b .750 .50 NOM. bi 11.6 12.0 Dì 3.0 3.3 D, 6.9 7.5 fit e2 2,3


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    H22B1/2/3 ST1340-01 50NOM. ST1193 ST1196 ST1195 H22B1 H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75 PDF

    3268

    Abstract: No abstract text available
    Text: c ? n SLOTTED OPTICAL SWITCH OPTOELECTRONICS CNY29 PACKAGE DIMENSIONS — D i- r+iT*p " t: SYMBOL i biri © MILLIMETERS MIN. A IM MAX, 11.0 .422 .433 A, 3.0 3.2 .119 ,125 30 3.2 .119 .125 .024 030 bi D 600 .750 .50 NOM. 24.7 °i D? 11.0 12.0 .457 .472 3.0


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    CNY29 ST1339 3268 PDF

    Diode FAJ 45

    Abstract: Diode FAJ package
    Text: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230


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    CQX14, CQX16 CQX14/16 940nm TQ-46 ST1332 70mWA Diode FAJ 45 Diode FAJ package PDF

    Untitled

    Abstract: No abstract text available
    Text: M O D E L B M L SERIES Surface Mount Multi-Layer Chip Inductors Size: 1206 O U T S T A N D IN G FEATURES APPLICATIONS • Tight dimensional tolerances and a small package make this chip ideal for high density installation • Monolithic structure for high reliability


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    L321611 PDF

    Untitled

    Abstract: No abstract text available
    Text: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO-18


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    CQX15, CQX17 CQX15/17 940nm Q00L452 ST1271 ST1276 ST1272 74bbflSl ST1274 PDF

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B1/2/3 PACKAGE DIMENSIONS -<pp ©S 3r b-1 SECTION X - xT~ LEAD PROFILE ST1339-01 SYMBOL MILLIMETERS MAX, MIN. A 10.7 11.0 3.0 3.2 A, 3.0 3.2 A? <f>b .600 .750 .50 NOM. bi D 24.3 24.7 0, 12.0 11.6 3.0 3.3 o? 6.9


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    H21B1/2/3 ST1339-01 H21B3 H21B2 H21B2, H21B1, PDF

    H23B1

    Abstract: il232 sidelooker DIODE
    Text: PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23B1 PACKAGE DIMENSIONS E f — D— -1 1-1 -j-1 J2 DESCRIPTION bl <pb bl SECTION X-X LEAD PROFILE 4 SYMBOL MILLIMETERS MIN. MAX. A 5.59 5.80 B 1.78 NOM. b .60 .75 .51 NOM. b, D 4.45 4.70 2.41 2.67


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    H23B1 H23B1 ST1228 DISPLACEMENT-DEGRSS232 ST1230 il232 sidelooker DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOE LECTRONI CS OPB866N51/OPB866N55 PACKAGE DIMENSIONS DESCRIPTION Th e O P B 866N series of switches is d esigned to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch II consists of an infrared em itting diode facing an NPN


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    OPB866N51/OPB866N55 OPB866N51 OPB866N55 0PB866N 4fcjfcjfl51 000fc PDF

    Untitled

    Abstract: No abstract text available
    Text: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO-18


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    CQX15, CQX17 CQX15/17 940nm Q00L452 ST1271 ST1276 ST1272 74bbflSl ST1274 PDF

    Untitled

    Abstract: No abstract text available
    Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTBQIICS L14C1/C2 PACKAGE DIMENSIONS The L14C series is a silicon phototransistor mounted in a wide angle, TO-18 package. •- <f>D-• UJ z I*— <pDl —-J a « o h 4 i z A . I FEATURES ST1336 SYMBOL INCHES


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    L14C1/C2 ST1336 74bfc 000L425 ST1072 ST1077 ST1074 74bbflSl 0QDb42b PDF

    Untitled

    Abstract: No abstract text available
    Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5G1 The F5G1 is an 880nm LED encapsulated in a clear, wide angle, sidelooker package. — D— * ï E f — I bi 1- 1 - 1 j-1 Green H? Color '¿b-— Code SECTION x -x LEAD PROFILE a I •* T i «•


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    880nm ST1334 ST1041 ST1046 ST1042 ST1045 ST1043 74bbflSl ST1044 PDF