Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861N51/OPB861N55 SEE NOTE 3 OPTICAL .126 3 .1 8 H CENTERLINE -.4 8 5 (12.32 r .11Q (2.79) The OPB861N series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN
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OPB861N51/OPB861N55
OPB861N
OPB861N51
OPB861N55
0PB861N
0D0b370
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Untitled
Abstract: No abstract text available
Text: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo transistor across a .125" 3.18 m m gap. A unique
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SELEC1324
QVB11133
QVB11134
QVB11233
QVB11234
QVB11333
QVB11334
QVB21113
QVB21114
QVB21213
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Untitled
Abstract: No abstract text available
Text: EHI REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRC1133 DESCRIPTIO N PACKAGE DIMENSIONS The QRC1133 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor reponds to radiation from the emitting
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QRC1133
QRC1133
1------ST1781
ORC1133
D00fc
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Untitled
Abstract: No abstract text available
Text: [sia DUAL VERY HIGH-SPEED LOGIC GATE OPTOCOUPLERS OPTOELECTRONICS i _ HCPL-2630 DUAL 10 MBit/s LOGIC GATE HCPL-2631 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2630 and HCPL-2631 dual channel optocouplers have two channels, each consisting of a 700 nm GaAsP LED, optically
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HCPL-2630
HCPL-2631
HCPL-2630
HCPL-2631
4bbfl51
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 DESCRIPTION OPTICAL ' CENTERLINE The OPB862T series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" 3.18 mm gap. A unique
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OPB862T51/OPB862T55
OPB862T
OPB862T51
OPB862T55
0PB862T
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Untitled
Abstract: No abstract text available
Text: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE
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L14Q1
L14Q1
ST1335
100pps
ST1112-11
Q00bM3fl
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Untitled
Abstract: No abstract text available
Text: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an
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VE11233
ST2176
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Untitled
Abstract: No abstract text available
Text: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN
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QSD422/423/424
QSD42X
QED423/
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Untitled
Abstract: No abstract text available
Text: LTD DATA Single Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tempera ture range of - 5 5 ° C to + 1 25°C e.g. military applications . BS9000, together with CECC, is a preferred
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BS9400.
BS9000
1294/M
BS9000,
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TIL119 equivalent
Abstract: No abstract text available
Text: DATA CS219, CS219/L2 I— -i u 6 Pin High C.T.R. Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem perature range of -55°C to +125°C e.g. military applications .
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CS219,
CS219/L2
BS9000
1294/M)
CECC2Q000
M/1084/
BS9000
TIL119 equivalent
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ST1736
Abstract: optocouplers H11B1
Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES
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H11B1
H11B2
H11B3
H11B3
E90700
H11B1)
H11B2)
H11B3)
ST1736
optocouplers H11B1
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st12
Abstract: CQX14 CQX16 ST1332
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255
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CQX14,
CQX16
ST1332
CQX14/16
940nm
ST1271
ST1276
ST1272
ST1275
ST1273
st12
CQX14
CQX16
ST1332
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Untitled
Abstract: No abstract text available
Text: [•13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE D I M E N S I O N S ^ D E S C R IP T IO N The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATIN G PLANE FEA TU R ES _ ST13 32 SYMBOL • Good optical to mechanical alignment
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1N6266
1N6266
940nm
L14G1
L14G2
L14G1.
74bbfl51
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB867T51/OPB867T55 DESCRIPTION > < f •-.3 1 3 (7 .9 4 ) - .125 {3 1 7 ) - OPTICAL - v c e n t e r l in e X -.4 8 5 (12.32) j-.110(2.79) — \ _ t —'ET - r I .425 (10.79) I— , I .345 (8.76) * ». .100 (2.54)
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OPB867T51/OPB867T55
OPB867T
OPB867T51
OPB867T55
74bbfl51
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154010
Abstract: No abstract text available
Text: MODEL BML SERIES Surface Mount Multi-Layer Chip Inductors Size: 0603 to 1206 O U TS TA N D IN G FEATURES Tight dimensional tolerances and a small package make this chip ideal for high density installation Monolithic structure for high reliability Magnetic shielded construction minimizes coupling to other components_
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51tethnologies
154010
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Untitled
Abstract: No abstract text available
Text: ISOCON INC ~ ll DE I 4flflb51G □ □ 0 [ ] D 3 ci □ I ” D T -4 1 -8 9 ~\ 6N134 6N134/883B Dual Channel Hermetically Sealed Optocoupler • • • • • • Hermetically Sealed High Speed TTL Compatible Input and Output High Common Mode Rejection 1500V dc Withstand Test Voltage
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4flflb51G
6N134
6N134/883B
Cfor10s
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transistor TIP 320
Abstract: OPB862T OPB862T51 OPB862T55 MW111 TRANSISTOR 751
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 PACKAGE DIMENSIONS .313 7.94 OPTICAL 125 (3’ 17)~ CENTERLINE - .485 (12.32) r .110 (2.79) E" .345 (8.76) 1— L .020 (o.5 i r r — .100 (2.54) y , .425 (10.90) MIN FEATURES i L\ PN 1 IDENTIFICATION
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OPB862T51/OPB862T55
OPB862T
OPB862T51
OPB862T55
67mW/Â
transistor TIP 320
MW111
TRANSISTOR 751
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H22B1
Abstract: H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75
Text: £ BPTOELECTBDHiCS SLOTTED OPTICAL SWITCH H22B1/2/3 PACKAGE DIMENSIONS —*| fai I— l_ L </>b 3 I bi S E C T IO N X - X LEAD PR O FILE SYMBOL MflUMETERS MIN, MAX. 10.7 A 11.0 3.2 3.0 A, .600 4>b .750 .50 NOM. bi 11.6 12.0 Dì 3.0 3.3 D, 6.9 7.5 fit e2 2,3
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H22B1/2/3
ST1340-01
50NOM.
ST1193
ST1196
ST1195
H22B1
H22B2
H22B3
SLOTTED OPTICAL SWITCH darlington
st134
a1l75
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Beckman Industrial 360
Abstract: No abstract text available
Text: M odel BCL 453232 Surface M ount Inductor Helimag • Wound ferrite core for low DCR • Molded construction provides superior strength and moisture resistance • Accurate dimensions for automatic handling and machine placement • Compatible with vapor phase and infra-red reflow soldering
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000pH
Cfor10sec.
BCL453232-561K
BCL453232-681K
BCL453232-821K
BCL453232-102K
HP4274A
Beckman Industrial 360
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3268
Abstract: No abstract text available
Text: c ? n SLOTTED OPTICAL SWITCH OPTOELECTRONICS CNY29 PACKAGE DIMENSIONS — D i- r+iT*p " t: SYMBOL i biri © MILLIMETERS MIN. A IM MAX, 11.0 .422 .433 A, 3.0 3.2 .119 ,125 30 3.2 .119 .125 .024 030 bi D 600 .750 .50 NOM. 24.7 °i D? 11.0 12.0 .457 .472 3.0
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CNY29
ST1339
3268
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Diode FAJ 45
Abstract: Diode FAJ package
Text: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230
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CQX14,
CQX16
CQX14/16
940nm
TQ-46
ST1332
70mWA
Diode FAJ 45
Diode FAJ package
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Untitled
Abstract: No abstract text available
Text: M O D E L B M L SERIES Surface Mount Multi-Layer Chip Inductors Size: 1206 O U T S T A N D IN G FEATURES APPLICATIONS • Tight dimensional tolerances and a small package make this chip ideal for high density installation • Monolithic structure for high reliability
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L321611
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Untitled
Abstract: No abstract text available
Text: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO-18
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CQX15,
CQX17
CQX15/17
940nm
Q00L452
ST1271
ST1276
ST1272
74bbflSl
ST1274
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS H21B1/2/3 PACKAGE DIMENSIONS -<pp ©S 3r b-1 SECTION X - xT~ LEAD PROFILE ST1339-01 SYMBOL MILLIMETERS MAX, MIN. A 10.7 11.0 3.0 3.2 A, 3.0 3.2 A? <f>b .600 .750 .50 NOM. bi D 24.3 24.7 0, 12.0 11.6 3.0 3.3 o? 6.9
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H21B1/2/3
ST1339-01
H21B3
H21B2
H21B2,
H21B1,
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