Untitled
Abstract: No abstract text available
Text: CFB0303 hŒŠ‹@d ”„“Œ†@r„”Šˆ@l•žMn•Œ ˆ@g„a™@fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“
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CFB0303
CFB0303
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CFB0303
Abstract: No abstract text available
Text: CFB0303 High Dynamic Range Low-Noise GaAs FET Advanced Product Information June 2002 1 of 2 Features ❏ Low-Noise Figure from 0.8 to 2.0 GHz ❏ High Gain ❏ High Intercept Point ❏ Highly Stable ❏ Easily Matched to 50Ω ❏ 70 mil Package ❏ PHEMT Material
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CFB0303
CFB0303
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CFB0303
Abstract: No abstract text available
Text: High Dynamic Range Low Noise GaAs FET CFB0303 August 2006 - Rev 03-Aug-06 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package PHEMT Material Applications Cellular Base Stations PCS Base Stations
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CFB0303
03-Aug-06
CFB0303
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pseudomorphic HEMT
Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
CF003-03-000X
pseudomorphic HEMT
Hemt transistor
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
for-000X
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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