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    CET451AN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CET451AN Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CET451AN Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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    CET451AN

    Abstract: No abstract text available
    Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)


    Original     		PDF CET451AN OT-223 OT-223 CET451AN

    CET451AN

    Abstract: No abstract text available
    Text: CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS ON = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package.


    Original     		PDF CET451AN OT-223 OT-223 CET451AN

    CET451AN

    Abstract: No abstract text available
    Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 30V, 7.2A, R ds o n =35 itiQ @Vgs=10V. R d s (o n )=50 it iî 2 @Vgs=4.5V. • High dense cell design for low R d s <o n ). • Rugged and reliable. • SOT-223 Package.


    OCR Scan     		PDF CET451AN 35itiq OT-223 OT-223 CET451AN