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    CERAMIC PHOTOTRANSISTOR Search Results

    CERAMIC PHOTOTRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    CERAMIC PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    phototransistor peak wave sensitivity 600 nm

    Abstract: C8060
    Text: Si Phototransistor KPT801C KPT801C Features • NPN phototransistor C7 +0.3 ø2.96 –0.1 Transparent epoxy resin Black Ceramic 2.0 • Low leak current +0.3 3.2 –0.2 • Ceramic package • Optical switches ø0.45 • Optical encoders ø0.3 15.5±1.0 Applications


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    PDF KPT801C phototransistor peak wave sensitivity 600 nm C8060

    transistor case To 106

    Abstract: case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor
    Text: .040" NPN Phototransistors VTT9002, 9003 Clear Epoxy TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9002, O-106 O-106 VTT9002 VTT9003 transistor case To 106 case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor

    VTT9102h

    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H VTT9102h

    transistor case To 106

    Abstract: TO-106 to106 VTT9002H
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H transistor case To 106 TO-106 to106 VTT9002H

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    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H

    transistor case To 106

    Abstract: case to106 to106 VTT9102H VTT9103H
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H transistor case To 106 case to106 to106 VTT9102H VTT9103H

    transistor case To 106

    Abstract: TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor
    Text: .040" NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


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    PDF VTT9102, O-106 O-106 VTT9102 VTT9103 transistor case To 106 TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor

    Untitled

    Abstract: No abstract text available
    Text: T-3mm Ceramic Base T-3mm Ceramic Base PRODUCT TREE INDEX ● ● ● ● ● Image next to part no. indicates cad file. 1. 2. 3. 4. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components


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    PDF 20ceramic 20base

    packages smt

    Abstract: OED-ST-23-TR
    Text: SMT 2 Layer Ceramic SMT 2 Layer Ceramic INDEX ● ● ● ● ● Image next to part no. indicates cad file. Lumex Part Number 1. 2. 3. 4. 5. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components


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    PDF OEDST23TR 20layer 20ceramic packages smt OED-ST-23-TR

    ceramic phototransistor

    Abstract: No abstract text available
    Text: SMT Ceramic - Wide Angle SMT Ceramic - Wide Angle INDEX ● ● ● ● ● Image next to part no. indicates cad file. Lumex Part Number 1. 2. 3. 4. 5. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components


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    PDF OEDST44F 20ceramic 20wide 20angle ceramic phototransistor

    40KV DIODE

    Abstract: No abstract text available
    Text: 66004 Mii 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS


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    PDF 40kVdc 40KV DIODE

    transistor military

    Abstract: No abstract text available
    Text: 66005 Mii 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation OPTOELECTRONIC PRODUCTS


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    transistor military

    Abstract: x02C 16kV
    Text: 66005 Mii 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation OPTOELECTRONIC PRODUCTS


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    40KV DIODE

    Abstract: No abstract text available
    Text: 66004 Mii 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS


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    PDF 40kVdc 40KV DIODE

    Untitled

    Abstract: No abstract text available
    Text: 66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 12/01/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature


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    Untitled

    Abstract: No abstract text available
    Text: 66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/22/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature


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    PDF 40kVdc

    40KV DIODE

    Abstract: X01C
    Text: 66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/22/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature


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    PDF 40kVdc 40KV DIODE X01C

    SG-2BC

    Abstract: SG2B
    Text: Photointerrupters Reflective KODENSHI SG-2BC DIMENSIONS (Unit : mm) The SG-2BC reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini (4φ) ceramic package,reducing installation space. FEATURES •Compact (ø4mm) •High performance


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    Untitled

    Abstract: No abstract text available
    Text: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package


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    PDF PNZ202S PN202S)

    Untitled

    Abstract: No abstract text available
    Text: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package


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    PDF PNZ202S PN202S) CTRLR102-001

    16kv diode

    Abstract: 16-mA
    Text: Mii 66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE OPTOELECTRONIC PRODUCTS DIVISION Rev A 8/23/04 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature


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    PDF to5-101 16kv diode 16-mA

    transistor 725

    Abstract: No abstract text available
    Text: 66005 mu 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation OPTOELECTRONIC PRODUCTS


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    66004-X01

    Abstract: transistor all
    Text: 66004 mu 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS


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    PDF 40kVdc 66004-X01 transistor all

    Untitled

    Abstract: No abstract text available
    Text: ms- HIGH VOLTAGE ISOLATOR 66147 OPTOELECTRONIC PRODUCTS DIVISION FEATURES 40KV Electrical Isolation Phototransistor Output Hermetic Ceramic Packaging High Common Mode Rejection BLACK DOT 2 LEADS z 4 DIA- leads RED ,DOT 3.005 2.975 • Ä APPLICATIONS Power Supply Feedback


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    PDF 40kVdc, bU2b40