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    CELL Search Results

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    Data Wave Inc IB-PI-CELL

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    CELL Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Cell-based ASICs - Application Notes Atmel Controlling Buses , This Application Note discusses the control of buses where a single signal is driven by one of many drivers. Original PDF
    Cell-based ASICs - Application Notes Atmel Compiled Megacell Testing , This Application Note describes a test methodology for compiled megacells if Built-in Self-test (BIST) circuitry is not included. Original PDF
    Cell-based ASICs - Application Notes Atmel Scan Testability Guidelines , This document is intended to provide recommendations for designs where testability is achieved using scan methodology. Original PDF
    Cell-based ASICs - Application Notes Atmel Configuration of the 3V-5V Input-Output Cells , This Application Note describes the configuration aof the pad ring of a device containing a mixture of 3V and 5V input-output cells for the Atmel 0.5 micron triplelayer metal process. Original PDF
    Cell-based ASICs - Application Notes Atmel Design Flow for Multiple Power Supply Levels , This Application Note describes a recommended methodology for managing the problem of designs with multiple power supply levels. Original PDF
    Cell-based ASICs - Application Notes Atmel Configuration of the NVM Serial Test Interface Database , This Application Note describes the contents and organization of the NVM serial test interface database which should be submitted to Atmel with each circuit design that contains one or more NVM blo Original PDF
    Cell-based ASICs - Application Notes Atmel Usage of the External Pull-down with the Atmel Iolib 5-volt Library , This Application Note describes the limit of the external pull-down values which can be used with the ATC50 (AT55K) IOlib 5V-tolerant cells. Original PDF
    Cell-based ASICs - Application Notes Atmel RC Effects in Nets , This Application Note explains how RC effects can occur and be moddelled in nets. This is of particular importance when planning the routing and track width of clock nets. Original PDF
    Cell-based ASICs - Application Notes Atmel Test Vector Compression by RTZ-RTO Formatting , The purpose of this Application Note is to explain how CBIC test vectors can be compressed by changing some pin formats into RTZ (Return-to-Zero) or RTO (Return-to-One. In addition, a description of rules w Original PDF
    Cell-based ASICs - Application Notes Atmel Clock Tree Guidelines , This Application Note provides design guidelines for clock trees so as to facilitate and optimize their automatic processing by place and route. Original PDF
    Cell-based ASICs - Application Notes Atmel ASIC Design Guidelinges , This document constitutes a general set of recommendations intended for use by designers when preparing circuits for fabrication by Atmel. The guidelines are independent of any particular CAD tool or silicon process. They are a Original PDF
    Cell-based ASICs - Data Sheets Atmel Library Cell Index Original PDF
    Cell-based ASICs - Data Sheets Atmel Atmel, Your Partner for System Level Integtation Flyer Original PDF
    Cell-based ASICs - Reference Library Atmel NVM Serial Test Interface Manual Original PDF
    Cellbus TranSwitch CellBus Bus Switch Scan PDF
    CellMaker-622 Mindspeed Technologies OC-12c SAR with ABR Traffic Management Original PDF
    celLNA1 Aethercomm Low Noise Amplifier Original PDF
    celLNA2 Aethercomm Low Noise Amplifier Original PDF
    celLNA3 Aethercomm Low Noise Amplifier Original PDF
    CellPipe 50AS Lucent Technologies 8 Mbps ADSL Router Original PDF

    CELL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING PA TR SOT-23

    Abstract: ultra low igss pA
    Text: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3408 OT-23 TSM3408CX MARKING PA TR SOT-23 ultra low igss pA

    Untitled

    Abstract: No abstract text available
    Text: ◆Operating Voltage Range Single Cell : 1.2V ~ 10V ◆Input / Output Rail To Rail Operation ◆Gain Bandwidth : 550kHz ◆Slew Rate : 0.5V / S ◆Low Power Consumption : 100μA ◆SOT-25 Ultra Small Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES


    Original     		PDF 550kHz OT-25 XC221A1200MR XC221A XC221A1100 XC221A XC221A1200

    Untitled

    Abstract: No abstract text available
    Text: CV110-2A Cellular-band High Linearity Downconverter IF IN GND 26 IF THRU GND 27 GND RF IN 28 25 24 23 22 RF OUT 1 GND 2 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 17 BIAS GND 6 16 GND RF/IF 10 11 12 13


    Original     		PDF CV110-2A CV110-2A JESD22-C101 J-STD-020 1-800-WJ1-4401

    12M05019A73

    Abstract: No abstract text available
    Text: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description pHEMT GaAs MMIC Die cellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS


    Original     		PDF TQP4M3019 TQP4M3019 12M05019A73

    mosfet 0835

    Abstract: TSM05N03
    Text: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM05N03 OT-223 TSM05N03CW mosfet 0835 TSM05N03

    GR-1400

    Abstract: No abstract text available
    Text: PHAST-12E Device Programmable, High-Performance ATM/PPP/TDM SONET/SDH Terminator for Level 12 with Enhanced Features TXC-06212 TECHNICAL OVERVIEW LINE SIDE Serial LIU Clocks The PHAST-12E is a highly integrated SONET/SDH terminator device designed for ATM cell, frame, higher order multiplexing,


    Original     		PDF PHAST-12E TXC-06212 STS-12/STS-12c/STM-4/STM-4c, STS-12/STS-12c/STM-4/STM-4c STS-12, TXC-06212-MA GR-1400

    Untitled

    Abstract: No abstract text available
    Text: TPS60120, TPS60121, TPS60122, TPS60123 REGULATED 3.3 V, 200-mA HIGH EFFICIENCY CHARGE PUMP DC/DC CONVERTERS SLVS257 – NOVEMBER 1999 features applications D D D D D D D D D D D D D D D D D D D D Battery-Powered Applications Two Battery Cells to 3.3-V Conversion


    Original     		PDF TPS60120, TPS60121, TPS60122, TPS60123 200-mA SLVS257 TPS6012x TPS60120/TPS60121 TPS60122/TPS60123,

    1N1517 equivalent

    Abstract: 1N1517
    Text: TPS61000, TPS61001, TPS61002, TPS61003, TPS61004, TPS61005, TPS61006 SINGLE-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD SLVS279 – MARCH 2000 D D D D D D D Start Up Into a Full Load With Supply Voltages as Low as 0.9 V Over Full Temperature Range Minimum 100-mA Output Current From


    Original     		PDF TPS61000, TPS61001, TPS61002, TPS61003, TPS61004, TPS61005, TPS61006 SLVS279 100-mA 10-Pin 1N1517 equivalent 1N1517

    DSLAM structure

    Abstract: No abstract text available
    Text: CUBIT-622 Device Multi-PHY CellBus Access Device TXC-05805 DESCRIPTION • 622 Mbit/s performance • UTOPIA Level 1/2 interface 8/16-bit with support for 64 ports • Tandem operation for two devices, supporting dual CellBus cell switching in load sharing or redundancy


    Original     		PDF TXC-05805 8/16-bit) CellB453. TXC-05805-MA DSLAM structure

    Untitled

    Abstract: No abstract text available
    Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2312 OT-23 TSM2312CX

    ASPEN

    Abstract: No abstract text available
    Text: ASPEN Express Device Multi-PHY CellBus Access Device TXC-05806 PRODUCT INFORMATION APPLICATIONS • • • • • ATM Access Multiplexers DSLAM Applications Remote Access Equipment ATM LAN Switch Frame Relay Switch Connection Table SDRAM 15 Row/Col


    Original     		PDF TXC-05806 8/16-bit) PHAST-12E) TXC-05806-MC ASPEN

    TSM10N06

    Abstract: No abstract text available
    Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM10N06 O-252 TSM10N06CP TSM10N06

    Low Drop Out Regulators

    Abstract: 7585C DIL 16
    Text: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic


    OCR Scan     		PDF UCC2930-3\UCC3930-3 UCC2930-3\UCC3930-3 Low Drop Out Regulators 7585C DIL 16

    Untitled

    Abstract: No abstract text available
    Text: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against


    OCR Scan     		PDF UCC3911 UCC3911 UCC3911.

    S-AU25

    Abstract: SAU25
    Text: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %


    OCR Scan     		PDF S-AU25 900MHz -----------------------------------S-AU25 15000pF, S-AU25 SAU25

    TC160G

    Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
    Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate


    OCR Scan     		PDF TC170C 250ps TC160G toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29

    TC51832FL10

    Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
    Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with


    OCR Scan     		PDF 832P/S 832P/S TC51832 256IC TC51832P plastic/SP/F/PL/SPL/FL-12 DIP28-P-300) TC51832FL10 TC51832FL-10 TC51832PL-10 832P

    Low Drop Out Regulators

    Abstract: 5V1 55C
    Text: o UCC2930\UCC3930 IIM TBO RATBO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management The UCC2930\UCC3930 is a BICMOS Low Power management con­ troller designed for battery powered applications for RF/Cellular tele­


    OCR Scan     		PDF UCC2930\UCC3930 UCC2930 UCC3930 Low Drop Out Regulators 5V1 55C

    Untitled

    Abstract: No abstract text available
    Text: TC9805P TENTATIVE D A T A TC9805P is a 24-pin CMOS programmable logic device PLD based on EEPROM cells. It has a zero-standby function. Designed using Toshiba's original technology, this device features low power dissipation and inputs that are compatible w ith TTL, NMOS, and CMOS output


    OCR Scan     		PDF TC9805P TC9805P 24-pin

    CFU450

    Abstract: TA31133FN TA31133 Murata BPF filter CAPACITOR 1000pf 25Q 328 CDB450C CDB450
    Text: IF DETECT ICs TENTATIVE DATA FM IF DETECTOR 1C FOR CELLULAR PHONE FEATURES • 2 IF A M P circuits can limit a band w idth according to a usage. • IF A M P has high performance carrier detection RSSI . • Low current consumption • Operating supply voltage range : 2.7~6.0V


    OCR Scan     		PDF SSOP16 TA31133FN-1 450kHz TA31133FN-6 CFU450 TA31133FN TA31133 Murata BPF filter CAPACITOR 1000pf 25Q 328 CDB450C CDB450

    TRF1015

    Abstract: No abstract text available
    Text: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode


    OCR Scan     		PDF TRF1015 SLWS021 900-MHz 20-Pin SR8800LPQ1050BY BBY51-03W SAFC881 5MA70N LL2012.

    74ABTH18646A

    Abstract: No abstract text available
    Text: SN54ABTH18646A, SN54ABTH182646A, SN74ABTH18646A, SN74ABTH182646A SCAN TEST DEVICES WITH 18-BIT TRANSCEIVERS AND REGISTERS SCBS166D - AUGUST 1993 - REVISED JULY 1996 Members of the Texas Instruments SCOPE Family of Testability Products One Boundary-Scan Cell Per I/O


    OCR Scan     		PDF SN54ABTH18646A, SN54ABTH182646A, SN74ABTH18646A, SN74ABTH182646A 18-BIT SCBS166D ABTH182646A 25-i2 74ABTH18646A

    TA31084

    Abstract: TA31084FN
    Text: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM POWER SUPPLY 1C FOR CELLULAR PHONE 3 in d e p e n d e n t r e g u la t o r s o n a chip, v e ry su ita b le f o r cellular, p o rta b le , m o b ile a n d d ig it a l t e le p h o n e s. FEATURES • 3 re g u la t o rs , in d e p e n d e n t o n e a n o t h e r


    OCR Scan     		PDF TA31084FN-1 TA31084FN-5 TA31084 TA31084FN

    TC9803

    Abstract: CK101 TC9801
    Text: TC9803P, TC9803FW TC9803 is a CMOS programmable logic device PLD based on EEPROM cells. Designed using Toshiba's original technology, this device features low power dissipation and inputs that are compatible w ith TTL, NMOS, and CMOS output voltage levels.


    OCR Scan     		PDF TC9803P, TC9803FW TC9803 TC9801. CK101 TC9801