Untitled
Abstract: No abstract text available
Text: GFP70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 70A H C N TRENFET GE TM t c u rod P New D TO-220AB 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) Dia. 0.148 (3.74) 0.415 (10.54) Max. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) D G PIN D
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GFP70N03
O-220AB
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Untitled
Abstract: No abstract text available
Text: GFD30N03 N-Channel Enhancement-Mode MOSFET H C t c N u E d TR NFET ew Pro N GE VDS 30V RDS ON 15mΩ ID 40A Mounting Pad Layout TM 0.165 (4.191) 0.100 (2.54) 0.118 (3.0) 0.063 (1.6) TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.190 (4.826) 0.094 (2.39) 0.087 (2.21)
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GFD30N03
O-252
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Untitled
Abstract: No abstract text available
Text: GF4936 Dual N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 37mΩ ID 5.8A H C N t E ET c u R T NF rod P GE SO-8 New TM S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02)
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GF4936
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Untitled
Abstract: No abstract text available
Text: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. S D Mounting Pad Layout 0.320 (8.13)
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GFB50N03
O-263AB
O-263
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Untitled
Abstract: No abstract text available
Text: GF9926 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 20V RDS(ON) 30mΩ ID 6.0A H C N t E ET c u R T NF rod P GE SO-8 New TM S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27)
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GF9926
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Abstract: No abstract text available
Text: GF9926 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 20V RDS(ON) 30mΩ ID 6.0A H C N t E ET c u R T NF rod P GE SO-8 New TM S1 1 8 D1 7 D1 6 D2 5 D2 Q1 G1 2 S2 3 G2 Q2 4 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81)
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GF9926
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Untitled
Abstract: No abstract text available
Text: GF4410 N-Channel Enhancement-Mode MOSFET H C N t E ET c R u d T NF ro P E G SO-8 New VDS 30V RDS ON 13.5mΩ ID 10A TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF4410
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NTE12
Abstract: NTE0515
Text: NTE SERIES Isolated 1W Single Output SM DC-DC Converters features p Wide Temperature Performance at Full 1 Watt Load, –40°C to 85°C p p p p p p p p p p p p p p p p p p Lead Frame Technology CECC00802 Reflow 280°C Single Isolated Output 1kVDC Isolation
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CECC00802
64cm2
9000SA00NTEM
NTE12
NTE0515
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GF9926D
Abstract: No abstract text available
Text: GF9926D N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.0A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag
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GF9926D
CECC802/Reflow
GF9926D
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Untitled
Abstract: No abstract text available
Text: NTA SERIES Isolated 1W Dual Output SM DC-DC Converters features p Wide Temperature Performance at Full 1 Watt Load, -40°C to 85°C p p p p p p p p p p p p p p p p p p Lead Frame Technology CECC00802 Reflow 280°C Dual Isolated Output 1kVDC Isolation Efficiency to 78%
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CECC00802
64cm2
9000SA000NTA
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NTE12
Abstract: NTE0505M
Text: NTE SERIES Isolated 1W Single Output SM DC-DC Converters features p Wide Temperature Performance at Full 1 Watt Load, –40°C to 85°C p p p p p p p p p p p p p p p p p p Lead Frame Technology CECC00802 Reflow 280°C Single Isolated Output 1kVDC Isolation
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CECC00802
64cm2
9000SA00NTEM
NTE12
NTE0505M
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Untitled
Abstract: No abstract text available
Text: GFB70N03 N-Channel Enhancement-Mode MOSFET H C N ct E ET u R d T NF ro P New GE VDS 30V RDS ON 8mΩ ID 70A TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.245 (6.22) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN
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GFB70N03
O-263AB
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Untitled
Abstract: No abstract text available
Text: GFB70N03 N-Channel Enhancement-Mode MOSFET H C N ct E ET u R d T NF ro P New GE VDS 30V RDS ON 8mΩ ID 70A TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.245 (6.22) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN
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GFB70N03
O-263AB
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Untitled
Abstract: No abstract text available
Text: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N ct E ET u R d T NF w Pro Ne GE TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 0.05 (1.27)
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GF2208
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Untitled
Abstract: No abstract text available
Text: GF4800 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 18.5mΩ ID 9A H C N t E ET c R u d T NF ro P E G SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF4800
MIL-STD-750,
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SBLF1630CT
Abstract: SBLF1640CT
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT SBLF1630CT AND SBLF1640CT SCHOTTKY ISOLATED PLASTIC RECTIFIER Reverse Voltage - 30 and 40 Volts FEATURES ITO-220AB 0.188 4.77 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) DIA. 0.122 (3.08)
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SBLF1630CT
SBLF1640CT
ITO-220AB
50mVp-p
SBLF1640CT
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GF4450
Abstract: No abstract text available
Text: GF4450 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 24mΩ ID 7.5A H C N t E ET c u R T NF rod P GE SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF4450
GF4450
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Untitled
Abstract: No abstract text available
Text: GFP75N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 6.5mΩ ID 75A H C t EN ET c R u T NF rod P GE New D TM G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) *
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GFP75N03
O-220AB
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Untitled
Abstract: No abstract text available
Text: GF6968A Common-Drain Dual N-Channel MOSFET Low VGS th VDS 20V RDS(ON) 22mΩ ID 6.2A H C N E ET R T NF GE TSSOP-8 d e c an tion v d A rma Info TM 0.122 (3.10) 0.114 (2.90) 0.005 (0.127) 1 8 D S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 0.028 (0.70) 0.020 (0.50) 5 8 D 0.177 (4.50)
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GF6968A
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: GF9926 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 20V RDS(ON) 30mΩ ID 6.0A H C N t E ET c u R T NF rod P GE SO-8 New TM 0.197 (5.00) 0.189 (4.80) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27)
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GF9926
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Untitled
Abstract: No abstract text available
Text: GFB70N03 N-Channel Enhancement-Mode MOSFET H C N ct E ET u R d T NF ro P New GE VDS 30V RDS ON 8mΩ ID 70A TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. S D 0.320 (8.13) 0.360 (9.14) G PIN
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GFB70N03
O-263AB
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Untitled
Abstract: No abstract text available
Text: GFP70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 70A H C N TRENFET GE TM t c u rod P New D TO-220AB 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) Dia. 0.148 (3.74) 0.415 (10.54) Max. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) D G PIN D
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GFP70N03
O-220AB
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Untitled
Abstract: No abstract text available
Text: GF4412 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 28mΩ ID 7A H C N t E ET c R u d T NF ro P E G SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF4412
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Untitled
Abstract: No abstract text available
Text: GF9410 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 30mΩ ID 7A H C N t E ET c R u d T NF ro P E G SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF9410
Speciall15V
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