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    CEB02N6 Search Results

    CEB02N6 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CEB02N6 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    CEB02N6 Chino-Excel Technology N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    CEB02N6A Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF

    CEB02N6 Datasheets Context Search

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    CEB02N6

    Abstract: No abstract text available
    Text: CEP02N6/CEB02N6 ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ


    Original     		PDF CEP02N6/CEB02N6 CEB02N6

    CEF02N6A

    Abstract: CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A
    Text: CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6A 650V 7.5Ω 1.5A 10V CEB02N6A 650V 7.5Ω 1.5A 10V CEI02N6A 650V 7.5Ω 1.5A 10V CEF02N6A 650V 7.5Ω 1.5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A CEP02N6A CEB02N6A CEI02N6A CEF02N6A O-220 O-263 O-262 O-220F CEF02N6A CEF02N6A equivalent CEP02N6 CEF02N6 CEP02N6A CEB02N6A CEI02N6A

    CEP02N6

    Abstract: CEB02N6 transistor cep02n6
    Text: CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 2A , RDS ON =5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP02N6/CEB02N6 O-220 O-263 CEP02N6 CEB02N6 transistor cep02n6

    CEB02N6G

    Abstract: CEF02N6 CEF02N6G
    Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS ON 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 CEB02N6G CEF02N6 CEF02N6G

    CEF02N6

    Abstract: transistor cep02n6 CEP02N6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEF02N6 transistor cep02n6 CEP02N6 CEB02N6 CEI02N6

    CEP02N6

    Abstract: CEF02N6 transistor cep02n6 CEB02N6 CEI02N6
    Text: CEP02N6/CEB02N6 CEI02N6/CEF02N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6 600V 5Ω 2A 10V CEB02N6 600V 5Ω 2A 10V CEI02N6 600V 5Ω 2A 10V CEF02N6 600V 5Ω 2A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6/CEB02N6 CEI02N6/CEF02N6 CEP02N6 CEB02N6 CEI02N6 CEF02N6 O-220 O-263 O-262 O-220F CEP02N6 CEF02N6 transistor cep02n6 CEB02N6 CEI02N6

    CEF02N65D

    Abstract: CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02
    Text: CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N65D 650V 6.9Ω 2A 10V CEB02N65D 650V 6.9Ω 2A 10V CEF02N65D 650V 6.9Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N65D/CEB02N65D CEF02N65D CEP02N65D CEB02N65D O-263 O-220 O-220F O-220/263 CEF02N65D CEF02N65 cef*02n65d CEP02N65D CEP02N6 CEF02N6 CEB02N65D CEB02N6 692AD CEP02

    CEF02N6G

    Abstract: CEB02N6G
    Text: CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP02N6G 600V 5.5Ω 2A 10V CEB02N6G 600V 5.5Ω 2A 10V CEF02N6G 600V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6G/CEB02N6G CEF02N6G CEP02N6G CEB02N6G O-263 O-220 O-220F O-220/263 100ms CEF02N6G CEB02N6G

    cef02n6a

    Abstract: CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1
    Text: CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON CEP02N6A 600V 8.5Ω 1.4A ID @VGS 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP02N6A/CEB02N6A CEF02N6A CEP02N6A CEB02N6A O-263 O-220 O-220F O-220/263 100ms cef02n6a CEP02N6A CEF02N6A equivalent CEB02N6A 56d41 CEP02N6 CEF02N6 56D4-1

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139