Untitled
Abstract: No abstract text available
Text: FS3871-DS-13_EN Datasheet FEB 2010 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.3 FS3871 Fo LINEAR CHARGE MANAGEMENT IC FOR LITHIUM-ION AND LITHIUM-POLYMER FS3871 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation
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FS3871-DS-13
FS3871
FS3871D/FS3871E
FS3871D/FS3871E-G
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fs1117
Abstract: No abstract text available
Text: FS1117-DS-10_EN Datasheet MAR 2010 RT P r R ro U ef pe NE er rti ’ en es ce O nl y REV. 1.0 FS1117 Fo FO 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 Fo FO RT P r R ro U ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation
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FS1117-DS-10
FS1117
OT-223
fs1117
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8855-DS-26
FS8855
500mAï
700mV
850mV
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Untitled
Abstract: No abstract text available
Text: FS1117-DS-12_EN Datasheet OCT 2010 F P r R ro SC ef pe ' e r rti en es ce O nl y REV. 1.2 FS1117 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 Fo F P r R ro SC ef pe ' e r rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS1117-DS-12
FS1117
OT-223
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Untitled
Abstract: No abstract text available
Text: FS8860-DS-19_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.9 FS8860 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8860-DS-19
FS8860
FS8860
OT-223
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Untitled
Abstract: No abstract text available
Text: FS1117-DS-13_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS1117 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS1117-DS-13
FS1117
OT-223
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FS8860
Abstract: No abstract text available
Text: FS8860-DS-21_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8860-DS-21
FS8860
OT-223
O-252
OT-223.
FS8860
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXT2012P5 ADV AN CE I N FORM AT I ON 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXT2012P5
OT223;
J-STD-020
MIL-STD-202,
DS32070
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXT2010P5 ADV AN CE I N FORM AT I ON 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXT2010P5
OT223;
J-STD-020
MIL-STD-202,
DS32011
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXTP19020DP5 ADV AN CE I N FORM AT I ON 20V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXTP19020DP5
OT223;
J-STD-020
DS32012
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADV AN CE I N FORM AT I ON 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXTP03200BP5
OT223;
-200V
J-STD-020
MIL-STD-202,
DS32068
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXT2013P5 ADV AN CE I N FORM AT I ON 100V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXT2013P5
OT223;
-100V
J-STD-020
MIL-STD-202,
DS32010
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FZT858
Abstract: fzt957
Text: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent
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OT223
FZT857
FZT855
FZT853
FZT851
FZT869
FZT849
FZT958
FZT957
FZT956
FZT858
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Untitled
Abstract: No abstract text available
Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts
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OT223
FZT605
FZT604
FZT600
2K/100K
FZT705
FZT704
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sot89 AE pnp
Abstract: AE SOT223 PMBT4401
Text: 96 Surface Mount Devices General Purpose Transistors cont. Ratings hFE v CE(sat) min./max. at Iq /V Ce max. at l(j^B V mA/mA Pinout See Section VII v CEO V VCBO V •c Package BCW70 BC807W BC857W BCP52 BCX52 SOT-23 SOT-323 SOT-323 SOT-223 SOT-89 45 45 45
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BCW70
BC807W
BC857W
BCP52
BCX52
PMBTA55
PMBT2907A
PXT2907A
PZT2907A
BCW89
sot89 AE pnp
AE SOT223
PMBT4401
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BST60
Abstract: No abstract text available
Text: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60
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BSP60
BST60
BSP61
BST61
BSP62
BST62
OT-223
OT-89
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NDT454P
Abstract: No abstract text available
Text: National June 1996 Semiconductor" N D T454P P-Channel Enhancement M ode Field Effect Transistor General Description Features These P-Channel e n h a n ce m e n t m o d e e ffect tra n s is to rs p ro p rie ta ry , hig h are pro d u ce d cell d e nsity, using
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NDT454P
NDT454P
OT-223
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FZT751
Abstract: FZT757 FZT705 FZT605 FZT651 FZT653 FZT655 FZT657 FZT753 FZT755
Text: SOT-223 NPN TRANSISTORS INCLUDING DARLINGTON h FE Type V CBO V C EO ^C(cont) •c m ^tot A W ^CE(sat) Min. MHz Ma x. at lc/lB Min. /Max. at Ic/V ce mA mA/Volts Volts Comple ment V V A FZT657 300 300 0.5 1.0 2.0 50/- 100/5 0.5 100/10 30 FZT757 FZT655 150
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OT-223
FZT657
FZT757
FZT655
FZT755
FZT605*
FZT705*
2K/100K
FZT653
FZT753
FZT751
FZT757
FZT705
FZT605
FZT651
FZT753
FZT755
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MARKING ZX SOT-23
Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches
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OT-23
350mW
CMPT8099
CMPT930
CMPT2222A
CMPT3904
CMPT4401
CMPT8599
SMPT29
500ns
MARKING ZX SOT-23
BC813
CMSH3-40
smd diode marking 5d SOD-323
2N29C7A
BC48b
BC337
N Channel Mosfet SOT-23 12W
SOT-89 smd marking ol
smd diode 5d SOD-323
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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Untitled
Abstract: No abstract text available
Text: September 1996 N ational S e m i c o n d u c t o r 1' NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features P ow er SO T lo gic level N-C hannel e n h a n ce m e n t m o d e fie ld e ffect tra n s is to rs are pro d u ce d using
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NDT3055L
OT-223
34bTb74
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Untitled
Abstract: No abstract text available
Text: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat
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OT223
FZT560
FZT958
FZT758
FZT558
BSP16
FZT957
FZT757
BFN39
FZTA92
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TRANSISTOR b72
Abstract: motor IG 42c NDT452AP
Text: June 1996 National Semiconductor" N D T452A P P-Channel Enhancement M ode eld Effect Transistor G eneral Description Features These P-Channel e n h a n ce m e n t m o d e p o w e r field e ffect tra n s is to rs are pro d u ce d using N a tio n a l's p ro p rie ta ry , hig h cell de n sity, DM O S te ch n o lo g y.
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NDT452AP
NDT452AP
OT-223
TRANSISTOR b72
motor IG 42c
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til 112 optocoupler
Abstract: No abstract text available
Text: SIEMENS SFH6941 LOW CURRENT INPUT MINI OPTOCOUPLER Prelim inary Data Sheet FEATURES • Transistor Optocoupler In SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at lF=1 mA, V ce=0.5 V > Good CTR Linearity Versus Forward Current
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OT223
SFH6941
til 112 optocoupler
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