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    CE 470 10V Search Results

    CE 470 10V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CE 470 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DC/DC Converter VRA_ X D-10WR2 & VRB_(X)D-10WR2 Series 10W, wide input voltage, isolated & regulated output DC/DC converter FEATURES Wide range of input voltage (2:1) Efficiency up to 90% Isolation voltage: 1.5K VDC Output over-voltage protection, short-circuit


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    PDF D-10WR2 D-10WR2 CISPR22/EN55022 EN60950 1500VDC 23-B/1

    Untitled

    Abstract: No abstract text available
    Text: WRE_S - 3WR2 & WRF_S - 3WR2 Series 3W,WIDE INPUT, ISOLATED & REGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER FEATURES ● Ultra-Miniature SIP Package ● 2:1 wide input voltage range ● Temperature range: -40°C ~ +85°C ● 3KVDC isolation ● Short circuit protection automatic recovery


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    WRA0505S-3WR2

    Abstract: No abstract text available
    Text: WRA_S - 3WR2 & WRB_S - 3WR2 Series 3W,WIDE INPUT, ISOLATED & REGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER FEATURES ● Ultra-Miniature SIP Package ● 2:1 wide input voltage range ● Temperature range: -40°C ~ +85°C ● 1.5KVDC isolation ● Short Circuit Protection automatic


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    2n3391 complement

    Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
    Text: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA


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    PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N531D 2N5311 2n3391 complement 2N3391 2N2926

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


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    PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150

    BF180

    Abstract: bf181 BF200 8F180 hg1e BF182 tranzystor J BF181 CE25 T072
    Text: T R A N Z Y S T O R Y n-p-n * BF180, BF181, BF200 14 - 74/2 SWW 1156-214 T ra n z y sto ry k rz em o w e p la n a r n e m a le j m ocy b a rd zo w ie lk ie j cz^stotliw oáci. T ra n z y sto r BF180 je st p rz ez n ac zo n y do sto so w an ia w r e gu lac y jn y ch sto p n iac h w zm acn iaczy U H F w glow icach


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    PDF BF180, BF181, BF200 BF180 BF181 BF200 BF180 8F180 hg1e BF182 tranzystor J BF181 CE25 T072

    Untitled

    Abstract: No abstract text available
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS IV R U /V D > U —X CCD ICC 10 5 C /hSUfcffi O k - ¥ > 7 & 105C Miniaturized, Low im pedance. ♦ *S M FEATURES • 'I'Mitnao M iniaturized. • M m * T > fc° - ¥ > ± Low im ped an ce at 100kH z with se le cte d m aterials.


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    PDF 100kH 120Hz) 100kHz 10X12 10X20 16X25 18X40

    A 107 transistor

    Abstract: BF287
    Text: BF 287 S I L I C O N P L A N A R NPN AM MIXER-OSCILLATOR AND AM-FM AMPLIFIER The B F 287 is a silicon plan ar NPN tran sisto r in a TO -72 metal ca se . It is prim arily intended for use in the AM m ixe r-o scillato r stage and as IF am plifier of AM -FM radios.


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    PDF BF287 A 107 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    PDF 002flflS4 BLU60/12 OT-119

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SD1433 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . ■ . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER p OUT = 10 W MIN. WITH 8.0 dB GAIN dr l|—^ R> .280 4L STUD M122 epoxy sealed


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    PDF SD1433 SD1433

    BTP 10/400

    Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
    Text: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT


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    PDF T0220 BACE95, BAE795 BACE95R, BAE795R BADE95, BAE995 BABE95, BAE895 BAV70 BTP 10/400 C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    JD 803

    Abstract: No abstract text available
    Text: i Alum inum E lectrolytic Capacitors c Miniature Single-Ended Aluminum Electrolytic Capacitors DESCRIPTION: FEATURES: Series 3481 capacitors exhibit long operating life 2000 hours at 105°C and very low impedance and ESR. They have a higher ripple current rating


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    PDF 470fiF 47juF 16VDC 100VDC JD 803

    CA30

    Abstract: 850C
    Text: Specification for Approval NO.: Q/YHC.CA30. 0 7 -1 0 -2 9 Product Name: CA30 Wet Tantalum Capacitor Customer: Type and Specification: All Series_ Material Code of Customer:_ WRITTING CHECKED APPROVALED Dongli BaiPing Zhuying Signature of Approval:


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    PDF 10x22 10x25 30x40 CA30 850C

    Untitled

    Abstract: No abstract text available
    Text: KMH Series UNITED CHEMI-CON • Snap Mount ■ Large Capacitance ■ High CV ■ High Ripple ■ +105°C Maximum Temperature The K M H se rie s c a p a c ito rs are the standard 105°C, large ca p a cita n ce , sn ap -in ca p a cito rs from U nited C h e m -C o n . The load life for the K M H se rie s is 2,000 hours at 105°C with the rated ripple


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    PDF KMH25VN103M25X35 KMH63VN122M22X25 120Hz) KMH160VN182M30X50 KMH400VN181M22X50 103M25X35 H160VN182M30X50 H400VN181M22X50

    capacitor RLA

    Abstract: No abstract text available
    Text: lü iU R G E Alum inum Electrolytic Capacitors F e a tu re • 85°C , s ta n d a r d lo w le a k a g e c u r r e n t se rie s <3§ 3S) • R o H S C o m pliance R LA 85*C R LA 85*C L732(M) L732(M) RLA 220uF 35V 220uF 35V = H = K -SPECIFICATIONS Item s


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    PDF 220uF 120Hz, 002CV l20Hz 10x12 capacitor RLA

    DG704

    Abstract: No abstract text available
    Text: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications


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    PDF SD1433 SD1433 Q07G44S DG704

    BF470

    Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
    Text: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic


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    PDF 235bOS ESELLSCHAFi02 Q62702-F498 Q62702-F506 Q62902-B63 Q62902-B62 23SbQS QG04504 BF470 F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548

    smd ic marking su

    Abstract: VA MARKING
    Text: aa SOLID TANTALUM ELECTROLYTIC CAPACITORS F91 LOW ESR Resin-molded Chip, For SMD For High Frequency n ic k x c o n For Pb Free Specifications Item P erfo rm an ce C h a ra cte ristics C a teg ory T e m p e ra tu re R ange ±20% , ±10% Lea kag e C urre n t


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    PDF 125CV F910E227MCC F910E477MNC F910G157MCC F910G227MCC F910G337MNC F910G477MNC F910J107MCC F910J157MCC F910J227MNC smd ic marking su VA MARKING

    TRANSISTOR 2SA1076

    Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
    Text: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power


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    PDF 2SA1075 2SA1076 2SA1075/2SA1076 2SC25251 2SC2526, O-220 TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS TM nickicoxi Tim er C ircuit Use Low Leakage Current Anti-Solvent Feature Ideally suited for timer circuits. Excellent leakage current stability, even subjected to load or no load at high temperature for a long time. High Stability


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    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS TM nicHicon T im er C ircuit Use Low Leakage Current Anti-Solvent Feature • Ideally suited for timer circuits. • Excellent leakage current stability, even subjected to load or no load at high temperature for a long time.


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    PDF 10X16 10X20 10X12 16X25

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS Lo w L e a ka g e C u rre n t Low Leakage Current Anti-Solvent Feature I Standard low leakage current series. t i »sssssssssssssssssssssssssss* • KT] V X IS p e c ific a tio n s Item P e rfo rm a n c e C h a ra c te ris tic s


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    PDF 10X12 10X16 10X20 16X25 16X31 18X35

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS TM n ic H ic o n Tim er C ircuit Use w Leakage Current Anti-Solvent Feature • Ideally suited for timer circuits. • Excellent leakage current stability, even subjected to load or no load at high temperature for a long time.


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    PDF 120Hz, 001CVH-1 10X16 10X20 10X12 16X25