Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CE 2766 Search Results

    CE 2766 Result Highlights (3)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    UPA2766T1A-E2-AY Renesas Electronics Corporation Nch Single Power Mosfet 30V 130A 0.88Mohm 8Pin HVSON (6051) Visit Renesas Electronics Corporation
    LM2766M6/NOPB Texas Instruments 200kHz switched capacitor voltage converter 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    CE 2766 Price and Stock

    Seiko Epson Corporation

    Seiko Epson Corporation SG-8018CE 22.766490M-TJHSA0

    Standard Clock Oscillators SG-8018CE 22.766490M-TJHSA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C ST 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CE 22.766490M-TJHSA0
    • 1 $1.03
    • 10 $0.906
    • 100 $0.749
    • 1000 $0.59
    • 10000 $0.558
    Get Quote

    Seiko Epson Corporation SG-8018CE 22.766490M-TJHPA0

    Standard Clock Oscillators SG-8018CE 22.766490M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CE 22.766490M-TJHPA0
    • 1 $1.03
    • 10 $0.906
    • 100 $0.749
    • 1000 $0.59
    • 10000 $0.549
    Get Quote

    Seiko Epson Corporation SG-8018CE 12.7666M-TJHPA0

    Standard Clock Oscillators SG-8018CE 12.7666M-TJHPA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CE 12.7666M-TJHPA0
    • 1 $1.03
    • 10 $0.906
    • 100 $0.749
    • 1000 $0.59
    • 10000 $0.558
    Get Quote

    Seiko Epson Corporation SG-8018CE 12.7666M-TJHSA0

    Standard Clock Oscillators SG-8018CE 12.7666M-TJHSA0: MHZ OSC 1.8V~3.3V +/-50PPM -40~105C ST 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG-8018CE 12.7666M-TJHSA0
    • 1 $1.03
    • 10 $0.906
    • 100 $0.749
    • 1000 $0.59
    • 10000 $0.558
    Get Quote

    CE 2766 Datasheets Context Search

    Catalog Datasheet
    MFG & Type
    Document Tags
    PDF

    H560

    Abstract: No abstract text available
    Text: Extract from the online catalog MCR-SWS-U Order No.: 2766465 MCR threshold value switches, with adjustable hysteresis and relay/ transistor output, input signal 0.10 V Commercial data


    Original
    IF-2009) H560 PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog MCR-SWS-I Order No.: 2766478 The illustration shows version MCR-SWS-U MCR threshold value switches, with adjustable hysteresis and relay/ transistor output, input signal 0 4 .20 mA


    Original
    85389091phoenixcon PDF

    CSA-C22

    Abstract: DILM15 DILM7-DILM15 DILM7 moeller
    Text: Contactor,3kW/400V,DC-operated Part�no. DILM7-01 24VDC Article�no. 276600 Program Product range Contactors Application Contactors for Motors Subrange Contactors up to 170 A, 3 pole Connection technique Screw terminals Pole


    Original
    3kW/400V DILM7-01 24VDC) techpapers/ver949en techpapers/ver938en techpapers/ver944en techpapers/ver937en techpapers/ver934en HPL-ED2011 CSA-C22 DILM15 DILM7-DILM15 DILM7 moeller PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock


    Original
    CY7C1351G CY7C1351G PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock


    Original
    CY7C1351G CY7C1351G PDF

    A8299

    Abstract: No abstract text available
    Text: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need


    Original
    CY7C1350G CY7C1350G A8299 PDF

    CY7C1351G

    Abstract: CY7C1351G-100AXC
    Text: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock


    Original
    CY7C1351G 133-MHz CY7C1351G CY7C1351G-100AXC PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)


    Original
    CY7C1347G CY7C1347G PDF

    CY7C1350G

    Abstract: No abstract text available
    Text: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need


    Original
    CY7C1350G 250-MHz 100-pin 119-ball CY7C1350G PDF

    CY7C1350G

    Abstract: No abstract text available
    Text: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need


    Original
    CY7C1350G 250-MHz 100-pin 119-ball CY7C1350G PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Functional Description Features • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)


    Original
    CY7C1347G 100-pin 119-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)


    Original
    CY7C1347G CY7C1347G PDF

    90 nm CMOS

    Abstract: No abstract text available
    Text: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need


    Original
    CY7C1350G CY7C1350G 727-CYC1350G133AXC CY7C1350G-133AXC 90 nm CMOS PDF

    CY7C1351G

    Abstract: CY7C1351G-100AXC
    Text: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock


    Original
    CY7C1351G 133-MHz CY7C1351G CY7C1351G-100AXC PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)


    Original
    CY7C1347G 100-pin 119-ball PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    jrm a55

    Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
    Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.


    OCR Scan
    64/256K RS232C-A jrm a55 tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45 PDF

    castanet capacitor

    Abstract: arcotronics castanet capacitor capacitor rse 104 arcotronics tantalum arcotronics 402 series capacitors
    Text: N Arcotronics Castanet All-Tantalum Capacitors Series CA and CAE 47 juF - 1800 juF 125V - 6VDC -55°C to + 125°C This conveniently-packaged polar button unit em ploys a non-solid electrolyte, and h as a sintered tantalum anode. T h e anode is produ ced from a high ca p a cita n ce


    OCR Scan
    PDF

    transistor npn d 2058

    Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
    Text: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


    OCR Scan
    2SA1678, 2SC4398 00073b4 T-37-Ã 10kfl, 10kohms 10kohms) 2SAl678/2SC4398-applied 2SA1678 transistor npn d 2058 2SC4398 BU 2058 transistors marking HJ SANYO SS 1001 PDF

    ic 2842

    Abstract: No abstract text available
    Text: HA-2842 Semiconductor September 1998 80MHz, High Slew Rate, High Output Current, Video Operational Amplifier File Number 2766.5 Features • S table at G ain s of 2 or G re a te r T he H A -2842 is a w ideb an d, high sle w rate, op era tiona l am p lifie r fea tu ring an o u tsta nding com b in a tio n o f speed,


    OCR Scan
    HA-2842 80MHz, 1960nm 483nm ic 2842 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • Fast Read Access Tim e-100 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for 256 Bytes


    OCR Scan
    e-100 10-Year 291A-12/93/2 0004A3T PDF

    Untitled

    Abstract: No abstract text available
    Text: data sheet 1992 O avan tek ITA-06300 MagIC Silicon Bipolar MMIC 1.5 Gb/s Transimpedance Amplifier Chip July, 1990 A Subsidiary of Hewlett-Packard Features • • • • • • ITA-06300 Chip Outline High Transimpedance Gain: Az = 2800 ohms 69 dB High Data Rates: 1.5 Gb/s NRZ


    OCR Scan
    ITA-06300 ITA-06300 PDF

    WESTINGHOUSE transistor

    Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
    Text: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3


    OCR Scan
    2N2757-78+ 30-ampere for2N2760, 2N2766, 2N2772 2N2778. C/2116/DB; C/2117 WESTINGHOUSE transistor Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse PDF

    Untitled

    Abstract: No abstract text available
    Text: N AI1ER PHILIPS/DISCRETE bTE bbS3S31 D27flflb 2^0 » A IAPX BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA


    OCR Scan
    bbS3S31 D27flflb BSV64 0D27flT0 PDF