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    CATHOD Price and Stock

    Nexperia BAT54C,215

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54C,215 Reel 7,494,000 3,000
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    Nexperia BAT54A,215

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54A,215 Reel 4,575,000 3,000
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    Nexperia BAS70-05,215

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAS70-05,215 Reel 2,082,000 3,000
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    Nexperia BAT54CW,115

    Schottky Diodes & Rectifiers DIODE-SML SIGNAL SOT323/SC-70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54CW,115 Reel 273,000 3,000
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    Vishay Intertechnologies BAT54C-E3-08

    Schottky Diodes & Rectifiers 200mA 30 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAT54C-E3-08 Reel 219,000 3,000
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    CATHOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vs-10bq100

    Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


    Original     		PDF VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vs-10bq100 DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100

    Untitled

    Abstract: No abstract text available
    Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,


    Original     		PDF PMEG2005CT O-236AB) AEC-Q101 771-PMEG2005CT215 PMEG2005CT

    VS-40EPS12-M3

    Abstract: VS-40EPS08-M3 VS-40EPS12
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


    Original     		PDF VS-40EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-40EPS12-M3 VS-40EPS08-M3 VS-40EPS12

    Untitled

    Abstract: No abstract text available
    Text: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS


    Original     		PDF VS-10ETF0. JEDEC-JESD47 E78996 O-220 2002/95/EC O-220FP 2011/65/EU 2002/95/EC. 2002/95/EC

    TO-252AA Mechanical dimensions

    Abstract: VS-50WQ04
    Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition


    Original     		PDF VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TO-252AA Mechanical dimensions VS-50WQ04

    Untitled

    Abstract: No abstract text available
    Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


    Original     		PDF 2SA1384 2SC3515

    smd marking S21

    Abstract: DIODE S4 56 smd diode S4 DIODE marking S4 06 BAP65-05
    Text: Diodes SMD Type Silicon PIN diode BAP65-05 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage, current controlled 1 0.55 Two elements in common cathode configuration +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 RF resistor for RF switches


    Original     		PDF BAP65-05 OT-23 smd marking S21 DIODE S4 56 smd diode S4 DIODE marking S4 06 BAP65-05

    smd diode marking a6

    Abstract: smd diode a6 DIODE SMD A6 SMD a6 Transistor SMD DIODE A6 t smd transistor A6 SMD A6 smd transistor A6 datasheet DIODE smd marking A6 BAS216
    Text: Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V cathode idenfifier Repetitive peak forward current:max. 500 mA.


    Original     		PDF BAS216 OD110 smd diode marking a6 smd diode a6 DIODE SMD A6 SMD a6 Transistor SMD DIODE A6 t smd transistor A6 SMD A6 smd transistor A6 datasheet DIODE smd marking A6 BAS216

    HSL2-1808

    Abstract: BAY6642
    Text: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified


    Original     		PDF BAY6642 1N6639 1N6643 HSL2-1808 HSL2-1808 BAY6642

    60EPS08PBF

    Abstract: VS-60EPS12PBF
    Text: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47


    Original     		PDF VS-60EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 60EPS08PBF VS-60EPS12PBF

    vs10CTQ150s

    Abstract: No abstract text available
    Text: VS-10CTQ150SPbF, VS-10CTQ150-1PbF Vishay High Power Products Schottky Rectifier, 2 x 5 A FEATURES VS-10CTQ150-1PbF VS-10CTQ150SPbF • • • • • Base common cathode 2 Base common cathode 2 • • 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode


    Original     		PDF VS-10CTQ150SPbF, VS-10CTQ150-1PbF VS-10CTQ150SPbF J-STD-020, 2002/95/EC AEC-Q101 O-262 2011/65/EU 2002/95/EC. vs10CTQ150s

    DB3X501K

    Abstract: db3x DB2J501
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB3X501K Silicon epitaxial planar type For high speed switching DB2J501 in Mini3 type package • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Anode 2: N.C. 3: Cathode


    Original     		PDF 2002/95/EC) DB3X501K DB2J501 667-DB3X501K0L DB3X501K0L DB3X501K db3x

    D8 marking, SOD123

    Abstract: No abstract text available
    Text: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23


    Original     		PDF AZ23-V-Series OT-23 BZX84C, OD-123 BZT52C 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D8 marking, SOD123

    V1F diode

    Abstract: 10MQ040NP
    Text: VS-10MQ040NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


    Original     		PDF VS-10MQ040NPbF J-STD-020, 2002/95/EC VS-10MQ040NPbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 V1F diode 10MQ040NP

    FFMT619

    Abstract: 016W design of 300 watt mosfet inverter transformer MOSFET DIMMER 1kW ramp 100Hz dimmer ucc3972 GE1200 simple 6 v ccfl circuit current fed push pull topology irf* p-channel sot-223
    Text: UCC1972/3 UCC2972/3 UCC3972/3 BiCMOS Cold Cathode Fluorescent Lamp Driver Controller FEATURES DESCRIPTION • 1mA Typical Supply Current Design goals for a Cold Cathode Fluorescent Lamp CCFL converter used in a notebook computer or portable application include small size, high efficiency, and low cost. The UCC3972/3 CCFL controllers provide the necessary circuit blocks to implement a highly efficient CCFL backlight power


    Original     		PDF UCC1972/3 UCC2972/3 UCC3972/3 UCC3973) UCC3972/3 FFMT619 016W design of 300 watt mosfet inverter transformer MOSFET DIMMER 1kW ramp 100Hz dimmer ucc3972 GE1200 simple 6 v ccfl circuit current fed push pull topology irf* p-channel sot-223

    2060CT

    Abstract: No abstract text available
    Text: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF 2035CT 2060CT O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 2060CT

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high


    Original     		PDF VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 2002/95/EC DO-204AL DO-41) 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: TT ï>Ëf| TOT755O 0D17554 S 990 17224 9097250 TOSHIBA <DISCRETE/OPTO D"T-m-33 TLR358, TLR359, TLR328, TLR329 • RED Color, 13.5ao o.;53")Charactec Height Numerical Display. • Pin Connections for Static Drive • Available Both Polarity of Connections, Common Cathode or Coanon Anode.


    OCR Scan     		PDF OT755O 0D17554 T-m-33 TLR358, TLR359, TLR328, TLR329 TLR358 TLR359 TLR328

    PIN Photodiode side look

    Abstract: TOLD9442M
    Text: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE


    OCR Scan     		PDF OLD9442M 35idual PIN Photodiode side look TOLD9442M

    TLG370

    Abstract: TLR370 TLR-370 TLR371 TLG371 TLG3 TLR-371
    Text: TO SH IBA TLG370,TLG371,TLR370,TLR371 T O S H IB A LED D ISPLAY TLG370, TLG371, TLR370, TLR371 1 D IG IT A L P H A N U M E R IC LED D ISPLAY • 12.7mm Character Height. • Available Both Polarity of Connections, Common Cathode or Common Anode. • Application


    OCR Scan     		PDF TLG370 TLG371 TLR370 TLR371 TLG370, TLG371, TLR370, TLR-370 TLR371 TLG3 TLR-371

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62380P 8CH LOW SATURATION DARLINGTON SINK DRIVER The TD62380P is comprised of eight NPN low saturation drivers. This device is specifically designed for multiplexed digit driving of eight digit common-cathode LED and also can


    OCR Scan     		PDF TD62380P TD62380P TD62785P, TD62785F DIPI8-P-300D 120mA /120m DIP-18

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    TOLD9231F

    Abstract: No abstract text available
    Text: TOSHIBA VLD Technical Data TOLD923 F Units in: mm Standard index guided type MQW InGaAlP VLD Package flange: 09mm Applications include: Bar code scanners, measurement systems, laser pointer, etc. Beam Emission Surface r Pin Connection 1. Laser diode cathode


    OCR Scan     		PDF OLD923 GGlb37S OLD9231 001b37b TOLD9231F

    ne002

    Abstract: 1n4551 ir705 1N3307 1N3316 1N3326 1n4554 1N3340 IN3310 1N3309
    Text: Back to Zener Diodes 1N3305 1N4549 1N3350 1N4556 'li'i NEW ENGLAND SEMICONDUCTOR 50 WATT SILICON ZENER DIODES Available in Voltages from 3.9 V thru 200 V POLARITY : Standard polarity FEATURES: anode to case. Reverse polarity cathode to case indicated by


    OCR Scan     		PDF 1N3305 1N4549 1N3350 1N4556 1N3305RB) ne002 1n4551 ir705 1N3307 1N3316 1N3326 1n4554 1N3340 IN3310 1N3309