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    CASE TO106 Search Results

    CASE TO106 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    CASE TO106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor case To 106

    Abstract: case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor
    Text: .040" NPN Phototransistors VTT9002, 9003 Clear Epoxy TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002, O-106 O-106 VTT9002 VTT9003 transistor case To 106 case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor

    transistor case To 106

    Abstract: TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor
    Text: .040" NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102, O-106 O-106 VTT9102 VTT9103 transistor case To 106 TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor

    transistor case To 106

    Abstract: case to106 to106 VTT9102H VTT9103H
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H transistor case To 106 case to106 to106 VTT9102H VTT9103H

    transistor case To 106

    Abstract: TO-106 to106 VTT9002H
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H transistor case To 106 TO-106 to106 VTT9002H

    Untitled

    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H

    VTT9102h

    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H VTT9102h

    AD5812

    Abstract: LEMF3225 LEMC3225
    Text: 高周波巻線チップインダクタ WOUND CHIP INDUCTORS FOR HIGH FREQUENCY LBH SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YDimention attaches much importance to characteristics of mount case. YThe product has excellent Q and SRF because, wound chip inductor.


    Original     		PDF K25VJ85C 085M0 107M0 157M0 075M0 087M0 059M0 091M0 AD5812 LEMF3225 LEMC3225

    VTT9102

    Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
    Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted


    Original     		PDF VTT1212, VTE12xx VTT9102 VTT9103 VTT9102 VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106

    case to-106

    Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D
    Text: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT*25 Pd = 250 mW PD=200 mW @ T8 25*C Case: To.106 Pd = 150 mW


    OCR Scan     		PDF OT-25 200mW Ta-26 O-105 O-106 O-220 020INOM. 0J07SI case to-106 SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D

    SC1674

    Abstract: bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106
    Text: TELEVISION/VIDEO DEVICES / SEMICONDUCTORS a I.F./R.F. amplifiers and oscillators NPN PNP . Maximum Ratings TYPE Case: SOT-25 Case: To.92 Case:To.106 P d = 250 mW PD=200mW P d = 150 mW @Tac»25*C y /B F i j ^BF BF /B F @ Ta-26*C 194A 194B 195C 195D NPN PNP


    OCR Scan     		PDF OT-25 Ta-26 O-105 O-106 O-220 100TP. 02U551 SC1674 bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106

    cbr3-p

    Abstract: No abstract text available
    Text: 61C .00170 s T r à l - ' S ' 1989963 CENTRAL ’SEMICONDUCTOR n a n tB bl General ssEtfiieenducf&p c r p . e@ntra! 00DQ17D 3 J? 3 æ Sâ -*s CR1F SERIES FAST RECOVERY RECTIFIER s@ in i S © iid y cf s r C o r p . Central semiconductor Corp. AXIAL LEAD EPOXY CASE (CASE 101


    OCR Scan     		PDF CBR30 0000S23 O-105 O-106 cbr3-p

    C5Z15B

    Abstract: 5 watt zener diode
    Text: CENTRAL SEMICONDUCTOR , £j¡ \ j>f| nfl«nb3 ODDOat-S 3 Y ^ l/'tS ^ 3 Watt Zener Diode • 5% Tolerance • Case C CENTRAL TYPE NO. C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B C3Z10B C3Z11B C3Z12B C3Z13B C3Z14B C3Z15B C3Z16B C3Z17B C3Z18B C3Z19B C3Z20B C3Z22B


    OCR Scan     		PDF C3Z47B C3Z50B C3Z51B C3Z52B C3Z56B C3Z62B C3Z68B C3Z75B C3Z82B C3Z91B C5Z15B 5 watt zener diode

    IN5374B

    Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
    Text: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75


    OCR Scan     		PDF C3Z47B C3Z50B C3Z51B C3Z52B C3Z56B C3Z10B C3Z62B C3Z11B C3Z68B C3Z12B IN5374B in5374 IN5373B Zener Diode 1N5368B

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


    OCR Scan     		PDF BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor

    CR3U-005

    Abstract: No abstract text available
    Text: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788


    OCR Scan     		PDF CR3U-005 CR3U-Q10 CR3U-Q15 CR3U-Q20 CBR30 0000S23 O-105 O-106

    LZ-230 zener diode

    Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz


    OCR Scan     		PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N3998A 1N3999A/1N2970B 1N4000A/1N2971B 1N2972B 1N2973B LZ-230 zener diode lz 04 "50 watt zener diode" zener 7.5 B 47

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    50 Watt Zener Diode

    Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz


    OCR Scan     		PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 50 Watt Zener Diode 10 watt zener diode LN298 TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    IN4706

    Abstract: 1N46A
    Text: 61C 00277 1989963 CENTRAL SEMICONDUCTOR : :V~TÏ g ngi?ga9 g KHS@©BBe3e5gfi@E? @®r;po €©&a€ffS9B D E | l'iôT'it.B '-T-'U 'D '? 0000577 | 1NA678 THRU 1 N 4 7 H LOW LEVEL SILICON ZENER DIODE C@iifral Ê@üîis@Bîeisgst csr JEDEC DO-7 CASE central


    OCR Scan     		PDF 1NA678 1N4678 CBR10Series, CBR25Ser/es CBR12 CBR30 O-105 O-106 IN4706 1N46A

    T-75 DIODE

    Abstract: Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5
    Text: I [ »."¿'ix fOÔ Ï9 0 1 9 Ô 9 9 6 3 " t ËM 'tR Â C ^SËMlCQKlOÜd^Ofe DE J j ^emisonductor e@rp. Central Central 2 |~ J ? CDSH-L SERI ES *1 semiconductor DESCRIPTION ODDOSTO SILICON LOW CURRENT SCHOTTKY BARRIER DIODE JEDEC DO-35 CASE corn. The CENTRAL SEMICONDUCTOR


    OCR Scan     		PDF 19S996-3 DO-35 CBR30 0000S23 O-105 O-106 T-75 DIODE Germanium DO-35 DIODE Germanium Power Diodes diodes ir 5

    Z9.1B

    Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
    Text: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88


    OCR Scan     		PDF C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B C1Z15B C1Z16B C1Z17B C1Z18B C1Z19B Z9.1B Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B

    2SA495

    Abstract: 2N4288 2N5133 2SA640 2N4291 2N4248 2SA564 2N4249 2SA545 2SA561
    Text: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY Pd IC VCEO mW (mA) (V) min fT Cob N.F. IC min max max VCE(sat) HFE MAXIMUM RATINGS max IC VCE max (mA) (V) (V) (mA) (MHz) (MHi) (dB) _ 2N4061 2N4062 2N4248 2N4249 2N4250 P P P P P TO-92B


    OCR Scan     		PDF 2N4061 O-92B 2N4062 2N4248 O-106 2N4249 2N4250 2SA495 2N4288 2N5133 2SA640 2N4291 2SA564 2SA545 2SA561

    MEU22

    Abstract: 2N6027 2N6028 BRY39 BRY56 BRY56A MEU21 pnp to106
    Text: Special Devices PROGRAMMABLE UNIJUNCTION TRANSISTORS MAXIMUM RATINGS TYPE NO. CASE Pd mW IA (mA) BVGKF (V) VF VT IP max IF (mA) (V) max Ö*A) max IV (MA) max 5 0.22 50 2 100 100 10 10 (V) IGKS (nA) max IGAO (nA) max BRY56 BRY56A TO-92BA TO-92BA 300 300 175


    OCR Scan     		PDF BRY56 O-92BA BRY56A MEU21 O-106 MEU22 2N6027 O-92BF 2N6028 BRY39 pnp to106