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    CASCODE TRANSISTOR ARRAY Search Results

    CASCODE TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CASCODE TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA3054

    Abstract: cascode transistor array CA3054M CA3054M96
    Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential


    Original     		PDF CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96

    cascode transistor array

    Abstract: NTE917
    Text: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise


    Original     		PDF NTE917 NTE917 300MHz. 120MHz. 004-j0 100MHz cascode transistor array

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    Abstract: No abstract text available
    Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way


    Original     		PDF 1990s, Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    Q1/2N3055 RCA

    Abstract: No abstract text available
    Text: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS


    Original     		PDF 1960s 20VTH. ALD110802 Q1/2N3055 RCA

    TSMC 40nm

    Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
    Text: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed


    Original     		PDF 40-nm TSMC 40nm TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds

    Large-Signal Characterization and Modeling of MOSFET for PA Applications

    Abstract: NONLINEAR MODEL LDMOS
    Text: RTUIF-28 Large-Signal Characterization and Modeling of MOSFET for PA Applications Sunyoung Lee and Tzung-Yin Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone


    Original     		PDF RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS

    z144

    Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
    Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22

    HP-343A

    Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
    Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F

    201934A

    Abstract: AAT2430A AAT2491 AAT2405 cascode transistor array aat2430 AAT2491IAN-T1 PN channel MOSFET 10A TVS 100V 300A AAT2430A-1
    Text: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array General Description Features The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates


    Original     		PDF AAT2491 AAT2491 01934A 201934A AAT2430A AAT2405 cascode transistor array aat2430 AAT2491IAN-T1 PN channel MOSFET 10A TVS 100V 300A AAT2430A-1

    z144

    Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
    Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22

    differential pair cascode

    Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
    Text: D Arrays Transistor-continued Super-Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors CA3095 Applications and Features D ifferen tial Cascode A m p lifie r: T w o super-beta n-p-n transistors —


    OCR Scan     		PDF 92CS-20350 CA3095 100/XAdc CA3127 differential pair cascode piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array

    CA3095E

    Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
    Text: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp


    OCR Scan     		PDF CA3095E 16-Lead 3095E 27--Bias CA3095E 28--Super-beta 30-High-input-im Fia32 34--CA309SE CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array

    Untitled

    Abstract: No abstract text available
    Text: CA3054 ff H A R R IS S E M I C O N D U C T O R March1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential


    OCR Scan     		PDF CA3054 120MHz CA3054 300MHz. 120MHz.

    transistor BC 667

    Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor BC 667 bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS

    transistor

    Abstract: A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor
    Text: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E .


    OCR Scan     		PDF CA3018, CA3018A CA3028A, CA3028B, CA3053 CA3039 CA3045, CA3046 CA3049, CA3102 transistor A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor

    CA3049T

    Abstract: A3102 transistor j307 3049T CA3102 J307
    Text: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent


    OCR Scan     		PDF CA3049, CA3102 500MHz 200MHz CA3049T A3102 transistor j307 3049T CA3102 J307

    647 transistor

    Abstract: TA6206 cascode transistor array
    Text: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz


    OCR Scan     		PDF 1A1197 CA3127* CA3127 500MHz. CA3127 100MHz 647 transistor TA6206 cascode transistor array

    Untitled

    Abstract: No abstract text available
    Text: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    OCR Scan     		PDF CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz

    CA3127E

    Abstract: No abstract text available
    Text: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    OCR Scan     		PDF CA3127 CA3127 500MHz. CA3127E

    CA3127

    Abstract: TRANSISTOR 100MHz zener y21 CA3127E
    Text: d ì CÌLJ CA3127 h -L A J R F R IS S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN


    OCR Scan     		PDF CA3127 CA3127 500MHz. TRANSISTOR 100MHz zener y21 CA3127E

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:


    OCR Scan     		PDF 0014b43 CA3127 CA-CA3127* CA3127 100-MHz

    AN5337 ca3028

    Abstract: CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA3053 CA3028A CA30288 ca3028a equivalent AN5337 equivalent
    Text: ÍSJ h a r r i s U P CA3028A, CA3028B, S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only


    OCR Scan     		PDF CA3028A, CA3028B, 120MHz CA3028A CA3028B 120MHz. A3028B CA3053 AN5337 ca3028 CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA30288 ca3028a equivalent AN5337 equivalent

    Untitled

    Abstract: No abstract text available
    Text: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz


    OCR Scan     		PDF CA3127* CA3127 500MHz. CA3127 16-lead