ignition driver
Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
ignition driver
fairchild Resonant IC
FJAFS1510ATU
FDC655
HV cascode smps
cascode smps
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PDF
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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HV cascode smps
Abstract: JESD97 STC05DE120HV
Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance
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STC05DE120HV
150kHz
2002/93/EC
STC05DE120HV
HV cascode smps
JESD97
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PDF
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Untitled
Abstract: No abstract text available
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
2002/93/EC
O247-4L
STC06IE170HV
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HV cascode smps
Abstract: C06IE170HV JESD97 STC06IE170HV
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
O247-4L
STC06IE170HV
HV cascode smps
C06IE170HV
JESD97
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PDF
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ESBT
Abstract: AN1699 STL12IE90 AN-1699
Text: AN1699 APPLICATION NOTE EFFICIENT DRIVING NETWORK FOR ESBT IN FORWARD TOPOLOGY SMPS S.Buonomo, L.Difalco & R.Scollo 1. THE CLASSICAL DRIVING CIRCUIT The ESBT Emitter Switching Bipolar Transistor configuration consists of a High Voltage Bipolar Transistor and a Low Voltage Power Mosfet in Cascode topology, as shown in figure 1.
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AN1699
ESBT
AN1699
STL12IE90
AN-1699
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JESD97
Abstract: P12IE95F4 STP12IE95F4 o811
Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STP12IE95F4
O220FP-4L
STP12IE95F4
JESD97
P12IE95F4
o811
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PDF
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HV cascode smps
Abstract: STC05DE120HV JESD97 flyback smps c05de
Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance
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Original
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STC05DE120HV
150kHz
2002/93/EC
O247-4L
STC05DE120HV
HV cascode smps
JESD97
flyback smps
c05de
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PDF
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Untitled
Abstract: No abstract text available
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
STC06IE170HV
O247-4L
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STC04IE170HV
Abstract: C04IE170HV JESD97 2a 280
Text: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC04IE170HV
2002/93/EC
O247-4L
STC04IE170HV
C04IE170HV
JESD97
2a 280
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C08IE150HV
Abstract: JESD97 STC08IE150HV ESBT
Text: STC08IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 8 A - 0.10 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ
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STC08IE150HV
2002/93/EC
O247-4LHV
STC08IE150HV
C08IE150HV
JESD97
ESBT
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sepic pfc
Abstract: C05IE150HP JESD97 STC05IE150HP
Text: STC05IE150HP Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ
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STC05IE150HP
2002/93/EC
O247-4LHP
STC05IE150HP
sepic pfc
C05IE150HP
JESD97
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PDF
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hv 102 st
Abstract: C08IE120HV
Text: STC08IE120HV Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz
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STC08IE120HV
O247-4L
STC08IE120HV
hv 102 st
C08IE120HV
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STC04IE170HV
Abstract: C04IE170HV JESD97 C04IE17 forward smps
Text: STC04IE170HV Emitter Switched Bipolar Transistor ESBT 1700 V - 4 A - 0.15 Ω Features DATA BRIEF VCS ON IC RCS(ON) 0.6 V 4A 0.15 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ
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STC04IE170HV
O247-4LHV
STC04IE170HV
C04IE170HV
JESD97
C04IE17
forward smps
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C05IE150HV
Abstract: JESD97 STC05IE150HV sepic pfc l33p
Text: STC05IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ
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STC05IE150HV
2002/93/EC
O247-4LHV
STC05IE150HV
C05IE150HV
JESD97
sepic pfc
l33p
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PDF
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STC04IE170HV
Abstract: C04IE170HV JESD97
Text: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. • General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC04IE170HV
2002/93/EC
O247-4L
STC04IE170HV
C04IE170HV
JESD97
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PDF
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emitter switched bipolar transistor
Abstract: C12IE90HV JESD97 STC12IE90HV
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
C12IE90HV
JESD97
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PDF
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emitter switched bipolar transistor
Abstract: No abstract text available
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
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PDF
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P12IE95F4
Abstract: STP12IE95F4 JESD97
Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STP12IE95F4
O220FP-4L
STP12IE95F4
P12IE95F4
JESD97
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PDF
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Untitled
Abstract: No abstract text available
Text: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz
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STC04IE170HV
O247-4L
STC04IE170HV
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C04IE170HP
Abstract: STC04IE170HP
Text: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz
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STC04IE170HP
O247-4L
STC04IE170HP
C04IE170HP
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PDF
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Untitled
Abstract: No abstract text available
Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V
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STC08IE150HV
O247-4L
STC08IE150HV
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C08IE150HV
Abstract: JESD97 STC08IE150HV HV cascode smps
Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V
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STC08IE150HV
O247-4L
STC08IE150HV
C08IE150HV
JESD97
HV cascode smps
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PDF
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marking code stmicroelectronics
Abstract: emitter switched bipolar transistor Part Marking STMicroelectronics STC05DE150 flyback smps S-550 equivalent TO247-4L STMicroelectronics marking code date SMPS IC 2005 Marking STMicroelectronics
Text: STC05DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 5 A - 0.10 W DATA BRIEF Figure 1: Package Table 1: General Features n n n n n VCS ON IC RCS(ON) 0.5 V 5A 0.01 W HIGH VOLTAGE / LOW CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE
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STC05DE150
STC05DE150
marking code stmicroelectronics
emitter switched bipolar transistor
Part Marking STMicroelectronics
flyback smps
S-550 equivalent
TO247-4L
STMicroelectronics marking code date
SMPS IC 2005
Marking STMicroelectronics
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